Download or read book Electrical Properties of Ge Metal oxide semiconductor Capacitors with High k La2O3 Gate Dielectric Incorporated by N Or and Ti Project Supported by the National Natural Science Foundation of China No 61274112 the Natural Science Foundation of Hubei Province No 2011CDB165 and the Scientific Research Program of Huanggang Normal University No 2012028803 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La2 O3 using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1 × 10 11 eV −1 cm −2 ), gate leakage property (3.6 × 10 −3 A/cm 2 at V g = 1 V + V fb ) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.