Download or read book Electrical Characterization of Reactive Ionetching Induced Damage in Si and SiO2 written by Weizhong Wu and published by . This book was released on 1993 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Damage Effects to Si SiO2 Structures Due to Reactive Ion Etching written by Moshé D. Bunyan and published by . This book was released on 1990 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control written by G. S. Mathad and published by The Electrochemical Society. This book was released on 1993 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of Reactive Ion Etching Induced Damage in Silicon Trench Etching written by Ronald Paul Reade and published by . This book was released on 1988 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Damage Etching for Fabrication of Quantum Effect Devices written by King Wai Kelwin Ko and published by . This book was released on 1996 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Download or read book Handbook of Microlithography Micromachining and Microfabrication Microlithography written by P. Rai-Choudhury and published by IET. This book was released on 1997 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focusing on the use of microlithography techniques in microelectronics manufacturing, this volume is one of a series addressing a rapidly growing field affecting the integrated circuit industry. New applications in such areas as sensors, actuators and biomedical devices, are described.

Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1983 with total page 1334 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Characterization of Plasma Etching Damage in ULSI Processes written by Xiao-Yu Li and published by . This book was released on 1995 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 1995 with total page 1326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Reactive Ion Etching of III V Compound Semiconductor Materials written by Ebrahim Andideh and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry in these compounds. Highly anisotropic structures with dimensions down to 300 A at a pitch of 600 A are demonstrated in InP. A selective RIE process for InGaAs on InAlAs in a CH$sb4$:H$sb2$ plasma has been developed and utilized to fabricate 0.26 $mu$m T-gate modulation doped field-effect transistors (MODFETs). The microwave measurements of reactive-ion-etched and wet-etched devices show identical performance. The RIE of GaAs and AlGaAs have been characterized in SiCl$sb4$ plasma chemistry. The optical, electrical and chemical properties of the etched materials have been investigated. The effects of different RIE parameters such as gas chemistry, RF power, and reactor pressure have been studied. The RIE of laser facets in the GaAs/AlGaAs/InGaAs material system and the growth on RIE-patterned GaAs substrates are reported. Selective RIE of GaAs on AlGaAs in SiCl$sb4$/SiF$sb4$ plasma is studied. A selectivity ratio of 350:1 has been obtained at low power. A small decrease in the saturation current of gateless MODFET structures has been observed after etching the GaAs cap layer and has been ascribed to low energy ion bombardment of the surface. This process is applied to the fabrication of 0.2 $mu$m T-gate pseudomorphic MODFETs. The dc and microwave performances of RIE and wet-etched devices are identical. For these short-gatelength devices, a threshold voltage standard deviation of only 30 mV is obtained for the reactive-ion-etched devices as compared to 230 mV for the wet-etched devices. This uniform distribution is essential to the realization of integrated circuits. Surface analysis methods, such as scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and Fourier transform infra-red spectroscopy (FTIR), have been utilized extensively to determine the chemistry of etched surfaces. Raman spectroscopy, Hall carrier mobility measurement and photoluminescence spectroscopy indicate insignificant electrical damage to the materials under optimal RIE conditions. Results of the surface analysis have been used to delineate optimum processes for the fabrication of the above devices.

Download or read book Photonic Probes of Surfaces written by P. Halevi and published by Newnes. This book was released on 2012-12-02 with total page 589 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is devoted principally to optical spectroscopies of material surfaces and also encompasses scattering techniques and theoretical response analysis as well as spectroscopies. In addition to solid surfaces some attention is also devoted to interfaces between two solids, between a solid and a liquid and to a liquid-vapor interface. These surfaces may be clean and perfect, in which case the purpose of the spectroscopical method at hand is to determine the deviation of the atomic structure in the surface region from that in the bulk, namely the surface reconstruction. Otherwise the surface may be imperfect due to roughness, strain or overlayers, in which case the spectroscopy can yield information on the nature of such imperfections, including the monitoring of growth processes. One of the foremost purposes of surface spectroscopies is to extract information on atomic and molecular adsorbates on solid surfaces. Most of the 10 chapters are concerned with photonic sources of excitation, the respective spectral regions ranging from the far infrared to X-rays.In conclusion this book provides a state-of-the-art review of all major types of photonic probes of surfaces and interfaces and deals with both applications and experiment and theory.

Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.