Download or read book Electrical Characterization of Nonstoichiometric GaAs Grown at Low Temperature by Molecular Beam Epitaxy written by James P Ibbetson and published by . This book was released on 1997 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Device Applications and Characterization of Nonstoichiometric GaAs Grown by Molecular Beam Epitaxy written by Frank William Smith and published by . This book was released on 1990 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Defect Characterization of Low Temperature Molecular Beam Epitaxy GaAs written by Ri-an Zhao and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy Technology and the Growth and Characterization of Low Temperature GaAs written by Laffite Flanders and published by . This book was released on 1997 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 2nd Symposium on Non Stoichiometric III V Compounds written by Tamas Marek and published by Lehrstuhl Fur Mikrocharakterisierung Friedrich Iversitat Erl. This book was released on 1999 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Characterization of Molecular Beam Epitaxy Grown HgCdTe Under Low Magnetic Field Strength written by Priyalal S. Wijewarnasuriya and published by . This book was released on 1991 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of MBE Grown Low temperature GaAs written by Bin Wu and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Compound Semiconductors 1994 Proceedings of the Twenty First INT Symposium on Compound Semiconductors held in San Diego California 18 22 September 1994 written by Herb Goronkin and published by CRC Press. This book was released on 1995-01-01 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Grown and Highly Non Stoichiometric GaAs and Related Materials written by and published by . This book was released on 1994 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Forty-one papers were presented in five sessions, as follows: Growth Issues, including growth of As and P-based compounds, annealing effects, and characterization by scanning tunneling microscopy (STM) real-time ellipsometry, and positron annihilation; Processing and Characterization, including point- defect and precipitate formations and their characterization by electrical, optical magnetic resonance, and STM techniques; Optical and Optoelectronic Properties, including the materials GaAs, InGaAs, and InGaP, and their responses to light stimulation, explained by various models; InP and Related Ternary Materials, including the Materials InP, InGaAs, InAlAs, and ordered InGaAs/ InAlAs layers, characterized by optically detected magnetic resonance, electrical measurements, tunneling electron microscopy, and photoreflectance; Applications of Nonstoichiometric Materials, including power MESFET design, phase noise measurements, coherent microwave generation, excitonic electro-optic observations, and GaAs on Si device applications.

Download or read book Nonstoichiometric GaAs based Semiconductors written by Hsi-Huai Wang and published by . This book was released on 1996 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heterostructure Epitaxy and Devices HEAD 97 written by Peter Kordos and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.

Download or read book Growth and Characterization of In 1 x Ga x As y P 1 y and GaAs Using Molecular Beam Epitaxy written by D. W. Covington and published by . This book was released on 1980 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the technical work accomplished during the first year of a two-year study of binary and quaternary semiconductors grown by molecular beam epitaxy. Research on GaAs materials demonstrated doping profiles for peeled film, mixer diodes and low-high-low, millimeter wave IMPATT diodes. Iron has been investigated as a potential MBE dopant for FET buffer layer applications. Although compensated layers exhibiting the Fe(2+) line at 0.371 eV were obtained for doping oven temperatures less than but close to 1013 C at GaAs growth rates of 1.0 micron per hr. there was unintentional accumulation of iron at the outer surface reserved for the active layer in conventional FET structures. Before initiating the study of quaternary materials, the MBE growth conditions were established for the ternary In(x)Ga(1-x)As. Layers of the latter semiconductor grown on GaAs substrates held at 510 C showed significant changes in surface morphology and electrical properties for x greater than but close to 0.3. A cryopumped MBE system containing six oven positions has been developed for growing the quaternary In(1-x)Ga(x)As(y)P(1-y) which requires relatively intense beams of P molecules. Lattice-matched In(1-x)Ga(x)As(y)P(1-y) layers have been deposited in this system on (001) GaAs substrates using ovens loaded with Ga, In, As, and GaP. Epitaxy was achieved.

Download or read book Science Abstracts written by and published by . This book was released on 1992 with total page 1228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Characterization of GaAs Grown by Vapour Phase Epitaxy written by Nicholas Christoforou and published by . This book was released on 1981 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1556 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defect Studies in Low temperature grown GaAs written by David Emory Bliss and published by . This book was released on 1992 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: