Download or read book Electrical Characteristics of MESFETs and HEMTs written by Moumita Bhoumik and published by GRIN Verlag. This book was released on 2013-11-05 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master's Thesis from the year 2012 in the subject Electrotechnology, grade: 9.36, West Bengal University of Technology, course: M.TECH IN ADVANCE COMMUNICATION, language: English, abstract: Advanced developments that were made recently in the field of Silicon (Si) semiconductor technology have allowed it to approach the theoretical limits of the Si material. However there are latest power device requirements for many applications that cannot be handled by the present Si-based power devices. These requirements include such as higher blocking voltages, switching frequencies, efficiency, and reliability. And hence, new semiconductor materials for power device applications are needed to overcome these limitations. For high power requirements, wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) and Gallium Arsenide (GaAs), which are having superior electrical properties, are likely to replace Si in the near future. This Study thesis compares the electrical characteristics of wide-bandgap semiconductors with respect to Silicon (Si) to verify their superior utility for power applications and predicts the future of power device semiconductor materials. This thesis also includes the study that has been performed regarding the electrical characteristics of high frequency semiconductor devices in terms of I-V characteristics and Noise Power Spectral Density (PSD) Analysis with respect to drain current fluctuation in the semiconductor devices. The semiconductor devices that are used for this particular thesis are – Metal Effect Semiconductor Field Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs).
Download or read book Electrical and Thermal Characterization of MESFETs HEMTs and HBTs written by Robert Anholt and published by Artech House Microwave Library. This book was released on 1995 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Download or read book Microwave MESFETs and HEMTs written by John Michael Golio and published by Artech House Microwave Library. This book was released on 1991 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed.
Download or read book Large signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Download or read book Broadband RF and Microwave Amplifiers written by Andrei Grebennikov and published by CRC Press. This book was released on 2017-07-12 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 609 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by Allied Publishers. This book was released on 2002 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Basic Properties of III V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Download or read book Fujitsu Scientific Technical Journal written by and published by . This book was released on 1965* with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book College of Engineering written by University of Michigan. College of Engineering and published by UM Libraries. This book was released on 1995 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Passivity of Metals and Semiconductors written by Michael Brian Ives and published by The Electrochemical Society. This book was released on 2001 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability of Compound Analogue Semiconductor Integrated Circuits written by Aris Christou and published by RIAC. This book was released on 2006 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Electrical Engineering Handbook Second Edition written by Richard C. Dorf and published by CRC Press. This book was released on 1997-09-26 with total page 2758 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1993, the first edition of The Electrical Engineering Handbook set a new standard for breadth and depth of coverage in an engineering reference work. Now, this classic has been substantially revised and updated to include the latest information on all the important topics in electrical engineering today. Every electrical engineer should have an opportunity to expand his expertise with this definitive guide. In a single volume, this handbook provides a complete reference to answer the questions encountered by practicing engineers in industry, government, or academia. This well-organized book is divided into 12 major sections that encompass the entire field of electrical engineering, including circuits, signal processing, electronics, electromagnetics, electrical effects and devices, and energy, and the emerging trends in the fields of communications, digital devices, computer engineering, systems, and biomedical engineering. A compendium of physical, chemical, material, and mathematical data completes this comprehensive resource. Every major topic is thoroughly covered and every important concept is defined, described, and illustrated. Conceptually challenging but carefully explained articles are equally valuable to the practicing engineer, researchers, and students. A distinguished advisory board and contributors including many of the leading authors, professors, and researchers in the field today assist noted author and professor Richard Dorf in offering complete coverage of this rapidly expanding field. No other single volume available today offers this combination of broad coverage and depth of exploration of the topics. The Electrical Engineering Handbook will be an invaluable resource for electrical engineers for years to come.
Download or read book University of Michigan Official Publication written by University of Michigan and published by UM Libraries. This book was released on 1993 with total page 822 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each number is the catalogue of a specific school or college of the University.
Download or read book Semiconductor Devices written by Amal Banerjee and published by Springer Nature. This book was released on 2023-10-16 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
