Download or read book Electrical Breakdown of Thin Gate and Tunneling Oxides written by Ih-Chin Chen and published by . This book was released on 1986 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Breakdown in Thin Gate and Tunneling Oxides written by Ih-chin Chen and published by . This book was released on 1984 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxide Reliability A Summary Of Silicon Oxide Wearout Breakdown And Reliability written by David J Dumin and published by World Scientific. This book was released on 2002-01-18 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Download or read book Studies of Electrical Breakdown in Thin Films of Silicon Dioxide written by Stephen Edward Holland and published by . This book was released on 1986 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxide Reliability written by D. J. Dumin and published by World Scientific. This book was released on 2002 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents in summary the state of our knowledge of oxide reliability.
Download or read book Materials Fundamentals of Gate Dielectrics written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2006-05-24 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2000-08-09 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Semiconductor Manufacturing Technology describes the individual processes and manufacturing control, support, and infrastructure technologies of silicon-based integrated-circuit manufacturing, many of which are also applicable for building devices on other semiconductor substrates. Discussing ion implantation, rapid thermal processing, photomask fabrication, chip testing, and plasma etching, the editors explore current and anticipated equipment, devices, materials, and practices of silicon-based manufacturing. The book includes a foreword by Jack S. Kilby, cowinner of the Nobel Prize in Physics 2000 "for his part in the invention of the integrated circuit."
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2021-12-02 with total page 627 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Download or read book Dielectric Breakdown in Gigascale Electronics written by Juan Pablo Borja and published by Springer. This book was released on 2016-09-16 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Influence of Temperature on Microelectronics and System Reliability written by Pradeep Lall and published by CRC Press. This book was released on 2020-07-09 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Download or read book Product Integrity and Reliability in Design written by John W. Evans and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book develops the root-cause approach to reliability - often referred to as "physics of failure" in the reliability engineering field. It approaches the subject from the point of view of a process and integrates the necessary methods to support that process. The book can be used to teach first- or second-year postgraduate students in mechanical, electrical, manufacturing and materials engineering about addressing issues of reliability during product development. It will also serve practicing engineers involved in the design and development of electrical and mechanical components and systems, as a reference.
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Download or read book Emerging Technologies and Circuits written by Amara Amara and published by Springer Science & Business Media. This book was released on 2010-09-28 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Technologies and Circuits contains a set of outstanding papers, keynote and tutorials presented during 3 days at the International Conference On Integrated Circuit Design and Technology (ICICDT) held in June 2008 in Minatec, Grenoble.
Download or read book ESD Design and Analysis Handbook written by James E. Vinson and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic Discharge is a pervasive issue in the semiconductor industry affecting both manufacturers and users of semiconductors. This easy-to-read, practical handbook presents an overview of ESD as it effects electronic circuits and provides a concise introduction for students, engineers, circuit designers and failure analysts.
Download or read book ULSI Science and Technology 1997 written by Hisham Z. Massoud and published by The Electrochemical Society. This book was released on 1997 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gate Dielectric Integrity written by Dinesh C. Gupta and published by ASTM International. This book was released on 2000 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.
