Download or read book Electrical and Structural Properties of Polycrystalline Silicon written by Joseph William Tringe and published by . This book was released on 1999 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semi insulating Polycrystalline Silicon written by K. M. Brunson and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polycrystalline Semiconductors IV written by S. Pizzini and published by Trans Tech Publications Ltd. This book was released on 1996-05-23 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present volume covers many aspects of semiconductors, over the wide structural range from nano- to large-grained crystalline. Scientists working on polycrystalline semiconductors, with various chemistries, here review fundamental research, technology and applications.
Download or read book The Electrical Properties of Polycrystalline Silicon written by Steven Joseph Schaefer and published by . This book was released on 1975 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure and Electrical Properties of Polycrystalline SiGe Thin Films written by Wei Qin and published by . This book was released on 1999 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical and Electrical Properties of Grain Boundaries in Polycrystalline Silicon written by Phillip Eugene Russell and published by . This book was released on 1982 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental techniques for the investigation of the electrical and chemical properties of grain boundaries are developed and utilized for the study of cast polycrystalline silicon. Totally automated electron beam induced current (E3IC) techniques are developed, including hardware and software development, and are used for the study of recombination properties of silicon grain boundaries. Automation was used to maximize the precision and accuracy of the E3IC data and to allow large numbers of measurements to be performed to determine the effects of experimental parameters on reproducibility and beam damage. EBIC, secondary electron and optical microscopy techniques are used to characterize the grain size and structure in Wacker Silso cast polycrystalline silicon. The grain size is found to be 1.63 +/- 0.43 millimeters. Grain structure was found to be controlled by the casting process used to form the material. Twin boundaries are found to be electrically inactive. Preferential grain boundary diffusion of phosphorus in silicon grain boundaries is measured using both bevel and stain, and bevel/E3IC techniques. The effects of heat treatments at 600, 750 and 900°C are investigated extensively. An MIS device structure which does not require high temperature processing (>200°C) for fabrication is developed and utilized for these studies. EBIC analysis results show Chat grain boundary recombination velocity is substantially increased by heating cast polysilicon to temperatures as low as 60C°C, whereas no effects were seen at AOCC. Heat treatments up to 900°C are investigated. Use of complementary surface analysis techniques are developed which show that these heat treatments result in oxygen segregation to grain boundaries. ln-situ fracturing techniques for Auger electron spectroscopy and secondary ion mass spectroscopy analysis of grain boundaries?.re developed. Ton microscopy techniques are developed and used to complement the fracture studies. Local oxygen concentrations of 0.1 atomic % were measured. Eased on the time and temperature dependence of the activation of grain boundary recombination, it is concluded Chat oxygen segregation is responsible for Che activation.
Download or read book The Effect of Growth Parameters on the Structure and Electrical Properties of Polycrystalline Silicon Films written by Norfried Klaus Josef Schoop and published by . This book was released on 1978 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Polycrystalline Silicon for Integrated Circuit Applications written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Download or read book The Physical and Electrical Properties of Polycrystalline silicon written by Mohammad Mahmoud Mandurah and published by . This book was released on 1981 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer. This book was released on 2015-12-24 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the third edition several topics are extended and treated in more depth including surfaces, disordered materials, amorphous semiconductors, polarons, thermopower and noise. More than 1800 references guide the reader to historic and current literature including original and review papers and books.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Material and Electrical Properties of Polycrystalline Silicon for Photovoltaic Applications written by Wendy Ann Orr and published by . This book was released on 1980 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polycrystalline Silicon for Integrated Circuits and Displays written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
Download or read book Advanced Silicon Semiconducting Silicon Alloy Based Materials Devices written by Jo Nijs and published by CRC Press. This book was released on 2021-05-30 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Download or read book Electricity from Photovoltaic Solar Cells Silicon sheet wafers and ribbons written by and published by . This book was released on 1986 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
