Download or read book Electrical and Magnetic Properties of II VI Diluted Magnetic Semiconductors written by Alton Barrett Horsfall and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diluted Magnetic Semiconductors written by Mukesh Jain and published by World Scientific. This book was released on 1991-10-31 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.

Download or read book First Principle Vs Experimental Design of Diluted Magnetic Semiconductors written by Omar Mounkachi and published by Nova Science Publishers. This book was released on 2018-10 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent discoveries have given rise to a new class of electronics known as "spin electronics or spintronics," which uses the electron spin rather than its charge to create polarized currents. Spintronics is currently experiencing an extraordinary development with the manufacture of nanoscale devices based on ferromagnetic materials and semiconductors. Their applications are numerous, ranging from recording, electronics, and optoelectronics to quantum information. Spintronics is a new generation of electronics that has brought and continues to bring a lot of progress to information storage; this is due to the discovery of new materials with new functionalities and multiple applications. The discovery of giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg (receiver of the Nobel Prize in Physics in 2007) is considered a starting point of spintronics. GMR is based on the variation of the electric current in the presence of a magnetic field. The spintronics has made important contributions to the miniaturization desired for electronics; it uses nanometric components for processing and storing information. However, the limits of miniaturization on a nanometric scale are known, and it is imperative to develop new ways and new materials to exceed those limits. The most desired properties for these materials are high spin polarization, modular magnetic properties by an electric field and a long lifetime of the spin polarization. Among the new promising materials, we cite the following: Diluted magnetic semiconductors, which give new magnetic properties of conventional semiconductors, functional oxides (including the semi-metals and multiferroic metals) and organic semiconductors. The main theoretical challenge in this area is to understand how the macroscopic magnetic behavior observed results from interactions of a large number of degrees of microscopic freedom. In these systems the disorder is an essential parameter of magnetic phenomena, and due to random locations of impurity atoms it can lead to a total physical difference from the observed absence. There has been considerable recent advances in the design of these materials as diluted magnetic semiconductors (DMS, or diluted magnetic semiconductors), and a number of semiconductors were investigated as II-VI group and III-V group doped compounds, with transition metals substituting their original cations. There are several different theoretical approaches to study these magnetic materials. The ab-initio approach starts from the Schrödinger equation to simulate a given material. Such an approach is essential to determine the parameters and microscopic properties of such a system. In this book, the authors analyzed the electronic structure of magnetic semiconductors diluted in the case of ZnO, GaN, SnO2, TiO2, MgH2, EuO and EuN doped RENs (RE=GdN, DyN and HoN). The authors focused on magnetic, optical and exchange mechanisms which control the ferromagnetism in these systems. The purpose of this book is to propose some ideas to answer the most important question in material science for semiconductor spintronics, primarily considering how room-temperature ferromagnetism in DMS can be realized. Additionally, the correlation between first principle and experimental design to see how properties of yet-to-be-synthesized materials can be predicted is discussed.

Download or read book Diluted Magnetic Semiconductors written by Mukesh Kumar Jain and published by World Scientific. This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.

Download or read book Semimagnetic Semiconductors and Diluted Magnetic Semiconductors written by M. Averous and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.

Download or read book Influence of Electronic Structure on the Magnetic Properties of IV VI Diluted Magnetic Semiconductors written by and published by . This book was released on 2001 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: We investigated the magnetic and thermal properties of chalcogenide-based diluted magnetic semiconductor (DMS) systems. These systems have been considered as possible novel materials with increased magnetic sensitivity and thermoelectric efficiency. Measurements of the magnetic properties of Sn(1-x)Gd(x)Te show that there is an antiferromagnetic pair-exchange interaction with a maximum in the magnitude at a hole concentration of about 3 x 10(exp 20) /cu cm. The interpretation of this result is based on the relative positions of the Gd 5d level, the Fermi level, and the L and sum sigma levels in the valence band. We have also measured the low-temperature specific heat in these DMS systems. Theoretical calculations have shown that one must take into account the systems of magnetic ions and the carriers and the interactions between them in order to obtain an approximate fit to the data. We have performed measurements of the thermoelectric power, thermoelectric figure of merit, and electrical conductivity in P(1-x)Mn(x)Te. The thermoelectric power increased as the Mn-content increased, but a decrease in the carrier mobility limited the thermoelectric figure of merit. In new quaternary and pentenary DMS we have observed a paramagnet - ferromagnet transition and a temperature dependent anomalous Hall effect.

Download or read book Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures written by Martin Kneip and published by GRIN Verlag. This book was released on 2009-02-17 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doctoral Thesis / Dissertation from the year 2008 in the subject Physics - Theoretical Physics, grade: sehr gut (1,0), University of Dortmund, language: English, abstract: In this thesis spin dynamics in (Zn,Mn)Se/(Zn,Be)Se and (Cd,Mn)Te/(Cd,Mg)Te DMS quantum well heterostructures with a type-I band alignment are studied, where the carriers are quantum confined. Especially the important role of free carriers in heating of the Mn-system, by its interaction with photoexcited carriers with excess kinetic energy, and in the cooling of the Mn-system in the presence of cold background carriers, provided by modulation doping, is established. The studies are separated in three chapters. In the fourth chapter of this thesis, new results on energy and spin transfer between free carriers and Mn-ion system are presented. Contributions of direct heating of the Mn-system by photocarriers and indirect heating via nonequilibrium phonons are distinguished and their competition is discussed. In the fifth chapter dynamics of spin-lattice relaxation of magnetic Mn-ions in DMS QW heterostructures is investigated and new experimental studies on (Zn,Mn)Se/(Zn,Be)Se heterostructures are shown. Crucial for spintronic devices is the ability to tune the spin relaxation time precisely, as the spin relaxation time is important in double respects. On the one hand spin polarization must be conserved over long times and distances, if the spin shall be processed or stored in a region, which is spatial separated from the spin-injector. Especially for the possibility of utilizing spins as quantum bits for quantum information processing, long spin polarization is needed. On the other hand short spin relaxation time is needed for fast switching between different spin-states. For instance semiconductor lasers can be switched off extremely fast by reorientation of spin. This very relevant topic is devoted the sixth chapter, before the thesis is summarized in the last chapter. Especially for one of the biggest drawbacks for precise tuning, that the magnetization dynamics in DMS cannot be controlled separately from the static magnetization, solutions via electric field control of the magnetization dynamics or via the technological concept of “digital alloying” are presented.precise tuning, that the magnetization dynamics in DMS cannot be controlled separately from the static magnetization, solutions via electric field control of the magnetization dynamics or via the technological concept of “digital alloying” are presented.

Download or read book Handbook of II VI Semiconductor Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-02-02 with total page 527 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.

Download or read book Introduction to the Physics of Diluted Magnetic Semiconductors written by Jan A. Gaj and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.

Download or read book Handbook of Spintronic Semiconductors written by Weimin Chen and published by CRC Press. This book was released on 2019-05-08 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.

Download or read book Widegap II VI Compounds for Opto electronic Applications written by H.E. Rúda and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in related areas of II-VI materials research. The motivation for preparing this book originated from the need for a current review of this fertile and important field. A primary goal of this book is therefore to present an eclectic synthesis of these sometimes diverse fields of investigation. This book consists of three main sections, namely (1) Growth and Properties, (2) Materials Characterization and (3) Devices. Part One presents an overall perspective of the state of the art in the preparation of the widegap II-VI materials. Part Two concentrates on current topics pertinent to the characterization of these materials from the unique perspective of each of the authors. Part Three focuses on advances in the opto-electronic applications of these materials. The material in this section runs the gamut from addressing recent advances in device areas which date back to some of the earliest reported research in these materials, to tackling some quite new and exciting future directions.

Download or read book Narrow gap II VI Compounds for Optoelectronic and Electromagnetic Applications written by Peter Capper and published by Springer Science & Business Media. This book was released on 1997-10-31 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Download or read book II VI Compounds and Semimagnetic Semiconductors written by J. B. Mullin and published by . This book was released on 1995 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on the fundamental physics of the II-VI compounds focusing on the properties of epitaxial layers, heterostructures, multilayers and superlattices. The main topics are: doping of wide gap II-VI compounds, quantum wires and quantum dots, exitonic gain, as well as basic processes in lasers, including the microgun laser. New aspects covered are dephasing phenomena.

Download or read book II VI Semiconductor Materials and their Applications written by MariaC. Tamargo and published by Routledge. This book was released on 2018-05-04 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.

Download or read book Physics of Semiconductors in High Magnetic Fields written by Noboru Miura and published by Oxford University Press. This book was released on 2008 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes most of the fundamental physical phenomena which semiconductors and their modulated structures exhibit in high magnetic fields. Readers can learn not only the basic theoretical background but also the present state of the art from the most advanced data in this rapidly growing research area.

Download or read book Properties of II VI Semiconductors Bulk Crystals Epitaxial Films Quantum Well Structures and Dilute Magnetic Systems Materials Research Society Symposium Proceedings written by and published by . This book was released on 1990 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The II-VI compound semiconductors possess characteristics which, as a group, are unique. Among the most active areas of investigation in these materials today are blue light emitters based on ZnSe, infrared detectors based on mercury-containing compounds such as HgCdTe, and the properties of dilute magnetic semiconductors. Each of these areas is represented by several papers included in this volume. (ttl).

Download or read book Compound Semiconductors Strained Layers and Devices written by Suresh Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.