Download or read book Elastic Strain Sharing in Silicon silicon Germanium Nanomembranes written by Michelle M. Kelly and published by . This book was released on 2007 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Elastic Strain Engineering in Silicon and Silicon germanium Nanomembranes written by and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain in crystalline materials alters the atomic symmetry, thereby changing materials properties. Controlling the strain allows tunability of these new properties. Elastic strain engineering in crystalline nanomembranes (NMs) provides ways to induce and relax strain in thin sheets of single-crystalline materials without exposing the material to the formation of extended defects. I use strain engineering in NMs in two ways: (1) elastic strain sharing between multiple layers using the crystalline symmetry of the layers to induce unique strain distributions, and (2) complete elastic relaxation of single-crystalline alloy NMs. In both cases, NM strain engineering methods enable the introduction of unique strain profiles or strain relaxation in ways not compatible with conventional bulk processing, where strain destroys the long-range crystallinity. Elastically strain-shared NMs are fabricated by releasing multi-layer thin film heterostructures from the original host substrate. If one layer of the original heterostructure contains strain, the strain will share between the layers of the freestanding NM. The extent of strain sharing will depend on the relative thicknesses, the ratio of the elastic moduli between the materials, and elastic symmetry of the layers. I calculate strain distributions in flat NMs between layers with 2-fold and 4-fold elastic symmetry. I verify my calculations with experimental proof of two examples: (1) strain sharing between biaxially isotropic layers, Si/SiGe/Si(001), and (2) strain sharing between biaxially anisotropic layers, Si/SiGe/Si(110). Strain engineering in NMs is also used to relax strain elastically in thin materials that are difficult to fabricate with conventional bulk crystal growth techniques. Thin films of SiGe grow uniformly and elastically strained on Si substrates. I release the SiGe layer from the Si growth template with NM fabrication processes and allow the SiGe allow to relax elastically to the appropriate bulk lattice constant. I confirm the high structural quality and strain uniformity of these new materials, and demonstrate their use as substrates for technologically relevant epitaxial films by growing strained Si layers and thick, lattice-matched SiGe alloy layers on them. I compare the structural quality of epitaxial films grown on SiGe NMs to those grown on plastically relaxed SiGe substrates.
Download or read book Silicon Nanomembranes written by John A. Rogers and published by John Wiley & Sons. This book was released on 2016-04-08 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.
Download or read book Strain engineered Nanomembrane Substrates for Si SiGe Heterostructures written by Pornsatit Sookchoo and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: For Group IV materials, including silicon, germanium, and their alloys, although they are most widely used in the electronics industry, the development of photonic devices is hindered by indirect band gaps and large lattice mismatches. Thus, any heterostructures involving Si and Ge (4.17% lattice mismatch) are subject to plastic relaxation by dislocation formation in the heterolayers. These defects make many devices impossible and at minimum degrade the performance of those that are possible. Fabrication using elastic strain engineering in Si/SiGe nanomembranes (NMs) is an approach that is showing promise to overcome this limitation. A key advantage of such NM substrates over conventional bulk substrates is that they are relaxed elastically and therefore free of dislocations that occur in the conventional fabrication of SiGe substrates, which are transferred to the epilayers and roughen film interfaces. In this thesis, I use the strain engineering of NMs or NM stacks to fabricate substrates for the epitaxial growth of many repeating units of Si/SiGe heterostructure, known as a 'superlattice', by the elastic strain sharing of a few periods of the repeating unit of Si/SiGe heterolayers or a Si/SiGe/Si tri-layer structure. In both cases, the process begins with the epitaxial growth of Si/SiGe heterolayers on silicon-on-insulator (SOI), where each layer thickness is designed to stay below its kinetic critical thickness for the formation of dislocations. The heterostructure NMs are then released by etching of the SiO2 sacrificial layer in hydrofluoric acid. The resulting freestanding NMs are elastically relaxed by the sharing of strain between the heterolayers. The NMs can be bonded in-place to their host substrate or transferred to another host substrate for the subsequent growth of many periods of superlattice film. The magnitude of strain sharing in these freestanding NMs is influenced by their layer thicknesses and layer compositions. As illustrated in this dissertation, strain-engineering of such NMs can provide the enabling basis for improved Group IV optoelectronic devices.
Download or read book SiGe Ge and Related Compounds 4 Materials Processing and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Download or read book Silicon Photonics written by and published by Academic Press. This book was released on 2018-10-08 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Photonics, Volume 99 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting interesting chapters on Transfer printing in Silicon Photonics, Epitaxial integration of antimonide-based semiconductor lasers on Si, Photonic crystal lasers and nanolasers on Si, the Evolution of monolithic quantum-dot light source for silicon photonics, III-V on Si nanocomposites, the Heterogeneous integration of III-V on Si by bonding, the Growth of III-V on Silicon compliant substrates and lasers by MOCVD, Photonic Integrated Circuits on Si, Integrated Photonics for Bio- and Environmental sensing, Membrane Lasers/Photodiodes on Si, and more. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Updated release includes the latest information on Silicon Photonics
Download or read book Investigation of Elastic Strain in Epitaxial Vacuum Deposited Germanium on Silicon written by J.D. Briante and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties written by and published by . This book was released on 2015 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant access holes) on the NM were made and an increase of 35% in the strain to at which crack first formed was found on NMs that lack etchant access holes. Ge NMs were used as a platform to investigate the relationships between surface passivation / functionalization and the physical properties of the material.
Download or read book High speed Thin film Transistors on Single crystalline Unstrained and Strained Si based Nanomembranes written by Hao-Chih Yuan and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nanomembranes written by John A. Rogers and published by John Wiley & Sons. This book was released on 2016-08-08 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.
Download or read book Functional and Smart Materials written by Chander Prakash and published by CRC Press. This book was released on 2020-10-25 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a comprehensive and broad-spectrum picture of the state-of-the-art research, development, and commercial prospective of various discoveries conducted in the real world of functional and smart materials. This book presents various synthesis and fabrication routes of function and smart materials for universal applications such as material science, mechanical engineering, manufacturing, metrology, nanotechnology, physics, biology, chemistry, civil engineering, and food science. The content of this book opens various scientific horizons proved to be beneficial for uplifting the standards of day-to-day practices in the biomedical domain. Myriad innovations in the materials science and engineering are transforming our everyday lives in extraordinary ways. This book captures the emerging areas of materials science and advanced manufacturing engineering and presents recent trends in research for researchers, field engineers, and academic professionals.
Download or read book Flexible Electronics written by Vinod Kumar Khanna and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Flexible electronics is a fast-emerging field with the potential for huge industrial importance. Comprising three volumes, this work offers a cohesive, coherent and comprehensive overview of the field. Themes covered include mechanical theory, materials science aspects, fabrication technologies, devices, and applications." -- Prové de l'editor.
Download or read book Silicon Photonics IV written by David J. Lockwood and published by Springer Nature. This book was released on 2021-06-08 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fourth book in the series Silicon Photonics gathers together reviews of recent advances in the field of silicon photonics that go beyond already established and applied concepts in this technology. The field of research and development in silicon photonics has moved beyond improvements of integrated circuits fabricated with complementary metal–oxide–semiconductor (CMOS) technology to applications in engineering, physics, chemistry, materials science, biology, and medicine. The chapters provided in this book by experts in their fields thus cover not only new research into the highly desired goal of light production in Group IV materials, but also new measurement regimes and novel technologies, particularly in information processing and telecommunication. The book is suited for graduate students, established scientists, and research engineers who want to update their knowledge in these new topics.
Download or read book Smart Sensor Systems written by Gerard Meijer and published by John Wiley & Sons. This book was released on 2014-04-02 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions from an internationally-renowned group of experts, this book uses a multidisciplinary approach to review recent developments in the field of smart sensor systems, covering important system and design aspects. It examines topics over the whole range of sensor technology from the theory and constraints of basic elements, physics and electronics, up to the level of application-orientated issues. Developed as a complementary volume to ‘Smart Sensor Systems’ (Wiley 2008), which introduces the basics of smart sensor systems, this volume focuses on emerging sensing technologies and applications, including: State-of-the-art techniques for designing smart sensors and smart sensor systems, including measurement techniques at system level, such as dynamic error correction, calibration, self-calibration and trimming. Circuit design for sensor systems, such as the design of precision instrumentation amplifiers. Impedance sensors, and the associated measurement techniques and electronics, that measure electrical characteristics to derive physical and biomedical parameters, such as blood viscosity or growth of micro-organisms. Complete sensor systems-on-a-chip, such as CMOS optical imagers and microarrays for DNA detection, and the associated circuit and micro-fabrication techniques. Vibratory gyroscopes and the associated electronics, employing mechanical and electrical signal amplification to enable low-power angular-rate sensing. Implantable smart sensors for neural interfacing in bio-medical applications. Smart combinations of energy harvesters and energy-storage devices for autonomous wireless sensors. Smart Sensor Systems: Emerging Technologies and Applications will greatly benefit final-year undergraduate and postgraduate students in the areas of electrical, mechanical and chemical engineering, and physics. Professional engineers and researchers in the microelectronics industry, including microsystem developers, will also find this a thorough and useful volume.
Download or read book Nanoscience And Technology A Collection Of Reviews From Nature Journals written by Peter Rodgers and published by World Scientific. This book was released on 2009-08-21 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains 35 review articles on nanoscience and nanotechnology that were first published in Nature Nanotechnology, Nature Materials and a number of other Nature journals. The articles are all written by leading authorities in their field and cover a wide range of areas in nanoscience and technology, from basic research (such as single-molecule devices and new materials) through to applications (in, for example, nanomedicine and data storage).
Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields
