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Book Effect of Total Ionizing Dose and Heavy Ion Radiation in a Silicon Carbide Vertical Junction Field Effect Transistor

Download or read book Effect of Total Ionizing Dose and Heavy Ion Radiation in a Silicon Carbide Vertical Junction Field Effect Transistor written by Robert Steele Shaw and published by . This book was released on 2013 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon carbide (SiC) power semiconductor devices become a more attractive alternative to silicon based technology (due to their lower on-resistance, higher voltage blocking, and higher operating temperature), SiC-based electronics will need to be qualified for high reliability applications, i.e., space exploration vehicles requiring a minimal level of radiation hardening. Unfortunately, very little data exists for SiC power devices due to their lack of commercial availability. It was only very recently that SiC power devices have been introduced into the commercial market. This work presents the radiation testing of a 1200 V SiC vertical junction field-effect transistor (VJFET) under total ionizing dose (TID) and heavy ion radiation hardness of a 1200 V SiC VJET. The TID testing revealed that the SiC VJFET is radiation hardened in excess of 300 krad, and the heavy ion testing revealed that the device is radiation hardened to 60 MeV-cm2/mg under a drain to source voltage and gate to source bias of 300 V and 0 V, respectively. While there is much more work to be done before integration into high reliability applications, a space exploration vehicle utilizing SiC power devices would see benefits in terms of gravimetric and volumetric reductions on a system-wide level, e.g., a more efficient power management unit, reduced thermal management system, and/or reduced energy storage system.

Book Silicon Carbide Vertical junction Field effect Transistors

Download or read book Silicon Carbide Vertical junction Field effect Transistors written by Kiyoshi Tone and published by . This book was released on 2002 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors

Download or read book Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors written by D. Neamen and published by . This book was released on 1974 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The permanent ionizing radiation effects resulting from the use of dielectrics to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads (Si) and for various dielectric isolation techniques. The experimental vehicles used for making these determinations were dielectrically isolated. JFET's operated in such a manner that they behaved as a combination junction-MOS field-effect transistor. The experimental results observed by measuring the saturation current, turn-off voltage, maximum transconductance, and channel conductance of the junction FET show a non-monotonic relationship in the effects of a positive charge build-up in the silicon dioxide isolation dielectric with increasing dose. A theoretical model is derived for calculating the interface charge density as a function of the measurable JFET device parameters.

Book Radiation Effects in Silicon Carbide

Download or read book Radiation Effects in Silicon Carbide written by Alexander A. Lebedev and published by . This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed. Specific features of the crystal structure of SiC are also considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate (ηe), which is a standard parameter for determining the radiation hardness of semiconductors. The ηe values obtained by irradiation of various SiC polytypes with n- and p-type of conductivity are analyzed in relation to the type and energy of irradiating particles. The possible physical mechanisms of compensation of the given material are considered. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Further, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Book Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal oxide semiconductor Technologies

Download or read book Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal oxide semiconductor Technologies written by Ivan Sanchez Esqueda and published by . This book was released on 2011 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.

Book Electrical Characterizations of Silicon Carbide SiC Static Induction Transistors SITs and Vertical Channel Junction Field Effect Transistors VJFETs

Download or read book Electrical Characterizations of Silicon Carbide SiC Static Induction Transistors SITs and Vertical Channel Junction Field Effect Transistors VJFETs written by Sharmila Devi Magan Lal and published by . This book was released on 2004 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Radiation Effects in Silicon Carbide SiC Micro Nanoelectromechanical Systems M NEMS

Download or read book Radiation Effects in Silicon Carbide SiC Micro Nanoelectromechanical Systems M NEMS written by Hailong Chen and published by . This book was released on 2020 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation is of great importance in both fundamental science (e.g., understanding black holes, exploring the time evolution and the origin of the universe) and technological applications (e.g., diagnosing and treating diseases in medicine, and producing electricity at nuclear plant). Among all the radiation studies, radiation in semiconductor materials attracts the most attention in the information era with numerous semiconductor devices operating in space and on earth. Although silicon (Si) still dominates the semiconductor industry, a number of wide bandgap (WBG) semiconductors have demonstrated advantages in harsh environment applications. Among them, silicon carbide (SiC), with a family of polytypes and excellent properties such as wide bandgap (2.3-3.2 eV), high displacement energies (20-35 eV), excellent elastic modulus (~200-700 GPa) and outstanding thermal conductivity (~500 W m-1K-1), has shown great potential for high temperature, high power, and radiation resistant applications. A quite large body of work has been performed during recent decades to understand the radiation effects in the SiC electronic devices, such as field effect transistors (FETs), bipolar junction transistors (BJTs), and diodes. Meantime, while micro/nanoelectromechanical systems (M/NEMS) have gained tremendous advancements and made great impact on many important applications including inertial sensing (e.g., gyroscopes, accelerators), radio-frequency (RF) signal processing and communication, radiation study in M/NEMS has been quite limited, especially for those based on beyond-Si materials. This dissertation makes an initial thrust toward investigating radiation effects in SiC M/NEMS. First, we develop an innovative 3D integrated MEMS platform, by exploiting a scheme consisting of an array of vertically stacked SiC thin diaphragms (and Si ones for comparison). This integrated design and configuration not only scientifically enables probing different radiation effects (with clear reference and control samples) in a 3D fashion, but also economically evades very expensive, repetitive tests on individual devices. Further, we demonstrate cantilever-shaped 3C-SiC multimode MEMS resonators for real-time detection of ultraviolet (UV) radiation. In parallel, we have also developed Si counterparts of the SiC devices to help elucidate how SiC behaves differently from Si for radiation sensing and detecting. Finally, we explore the displacement and ionizing irradiation effects in SiC NEMS switching devices to gain comprehensive and in-depth understanding of the science behind the radiation effects in nanoscale structures made of thin SiC on SiO2. The investigation of NEMS switches before, during, and after proton and X-ray irradiation reveals how energetic particles cause threshold voltage modification, due to the dislocation damage in SiC crystal and how ionizing effects may affect the performance of these nanoscale devices.

Book Silicon Carbide Field Effect Transistor FET Transducers for Harsh Environment Applications

Download or read book Silicon Carbide Field Effect Transistor FET Transducers for Harsh Environment Applications written by Walter Daves and published by . This book was released on 2013-03-12 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices

Download or read book Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices written by Dan M. Fleetwood and published by World Scientific. This book was released on 2004 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."

Book Characterization of Silicon Carbide Junction Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors

Download or read book Characterization of Silicon Carbide Junction Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors written by Alvin Ong and published by . This book was released on 2007 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: Generating the device models requires measured device characteristics like drain-source on-resistance and switching times. The objective of this research was to develop an automated bench top test system to characterize the SiC MOSFET and JFET for device modeling. A high power curve tracer and specially designed test board along with a data acquisition program developed in LabVIEW(TM) provide for a quick and accurate measurement of the device parameters, thus providing with vital information against which their models are validated.

Book Study of Silicon Carbide Buried Gate Junction Field Effect Transistor and Related Devices for High Temperature Applications

Download or read book Study of Silicon Carbide Buried Gate Junction Field Effect Transistor and Related Devices for High Temperature Applications written by Lisa V. Rozario and published by . This book was released on 1997 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: