Download or read book Effect of Substrate Temperature on the Dielectric Properties of Ta2O5 Films Deposited by Reactive Pulsed Magnetron Sputtering written by Jasbir S. Juneja and published by . This book was released on 2002 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigations on Magnetron Sputtered Tantalum Oxide Films written by S. V. Jagadeesh Chandra and published by LAP Lambert Academic Publishing. This book was released on 2011-01 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tantalum Oxide Thin Films for Microelectronic Applications written by Fang-Xing Jiang and published by . This book was released on 1995 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: "There is a critical demand for new dielectric films having higher dielectric constants, higher dielectric strengths and lower leakage currents for applications such as charge storage capacitors for DRAMs in ULSI and low-inductance decoupling capacitors for the control of simultaneous switching noise (SSN) in high-speed switching ULSI chips. Among these candidates for insulators, tantalum pentoxide has received considerable attention. As earlier as in the 1960's, tantalum oxide has been used as the dielectric in discrete capacitors. Recently, several papers have been reported on the electrical properties of Ta205 films grown by various techniques. It has been reported that the electrical properties, e.g. dielectric constant, leakage current, dielectric strength as well as the nature of the Ta2Os/Si interface, are extremely sensitive to the annealing conditions. At the present time, however, the role of the as-deposited Ta2Os/Si interface is not fully understood. In the present study, a two-step process, consisting two separate depositions and annealing, has been developed to improve the physical and electrical characteristics of reactivity sputtered Ta2Os films. The reactive ion etching (RE) selectivity of Ta2Os to Si, Si02 and Ta in CHF3, CF4 and SF6 with fractions of 02, H2 and Ar has been investigated for IC process applications. The tantalum oxide films were deposited on Si wafers by reactive DC sputtering. The films were characterized for thickness and refractive index using an ellipsometer and their phase was identified using an X-ray diffractometer. The annealing effect on Ta2Oj in oxygen ambient at 800C shows that the Ta205 films crystallize into an orthorhombic phase, condensed with a decrease of thickness and an increase of refractive index. Various capacitor configurations, such as MTM (Al/Ta205/Al) and MIS (Al/Ta20$/p-Si, Al/Ta205/n-Si and Al/Ta2Os/n+-Si), were fabricated to study the nature of Ta2Os/Si interface and the I-V and C-V characteristics. The as-deposited Ta2Os film on p-type Si substrate can sustain an electric field of 3 MV/cm at a current density of 1 u.A/cm2 in the accumulation mode, which is an order higher than that on n-type substrate. The value of apparent dielectric constant of as-deposited Ta2Os film estimated from the Al/Ta205/Al capacitor is 16, however, the value varies from 6 to 10 in MIS capacitors. This shows a evidence strongly that there is a substrate sensitivity for tantalum oxide films. As a result of the two-step process, the dielectric constant of Al/Ta2Os/n+-Si capacitor increases to 21. This value is considerably close to 24 for bulk Ta2Oj. To investigate the RIE selectivity of Ta2Os to Ta, Si and Si02, the Ta2Os film was deposited onto a wafer with three other films, DC sputtered Ta, LPCVD polysilicon, and thermally grown Si02. It is revealed that in SF6 with various fractions of 20% hydrogen or argon, the Ta2Os film shows extremely low etch rate as compared with Si, Ta and Si02, and in CF4 with various fractions of 30% hydrogen or oxygen, the Ta205 film shows a lower etch rate. However, in CHF3 the etch rates of Si and Ta2Os are comparable. The absorption spectrum of deposited tantalum oxide films was also measured. This material can be used for phase shift and attenuation masks, sunglasses and light filters. The as-deposited tantalum oxide films show a high absorbency peak at 217 nm and an additional small peak. at 416 nm with two subpeaks at 286 and 510 nm using spectrophotometer. The high peak becomes broadened and the long wavelength side of the small peak is shifted to short wavelength through annealing. A model of free volume like defect and oxygen vacancy like defect is proposed to explain the change of the absorbency spectrum."--Abstract.
Download or read book Advanced Strategies in Thin Film Engineering by Magnetron Sputtering written by Alberto Palmero and published by MDPI. This book was released on 2020-12-10 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have witnessed the flourishing of numerous novel strategies based on the magnetron sputtering technique aimed at the advanced engineering of thin films, such as HiPIMS, combined vacuum processes, the implementation of complex precursor gases or the inclusion of particle guns in the reactor, among others. At the forefront of these approaches, investigations focused on nanostructured coatings appear today as one of the priorities in many scientific and technological communities: The science behind them appears in most of the cases as a "terra incognita", fascinating both the fundamentalist, who imagines new concepts, and the experimenter, who is able to create and study new films with as of yet unprecedented performances. These scientific and technological challenges, along with the existence of numerous scientific issues that have yet to be clarified in classical magnetron sputtering depositions (e.g., process control and stability, nanostructuration mechanisms, connection between film morphology and properties or upscaling procedures from the laboratory to industrial scales) have motivated us to edit a specialized volume containing the state-of-the art that put together these innovative fundamental and applied research topics. These include, but are not limited to: • Nanostructure-related properties; • Atomistic processes during film growth; • Process control, process stability, and in situ diagnostics; • Fundamentals and applications of HiPIMS; • Thin film nanostructuration phenomena; • Tribological, anticorrosion, and mechanical properties; • Combined procedures based on the magnetron sputtering technique; • Industrial applications; • Devices.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Ito Thin Film by Magnetron Sputtering written by Öcal Tuna and published by LAP Lambert Academic Publishing. This book was released on 2010-05 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study Indium Tin Oxide (ITO) thin films were grown by both DC and RF magnetron sputtering techniques. To know deposition rate of ITO, system was calibrated for both DCMS and RFMS and then ITO were grown on glass substrate with the thickness of 70 nm and 40 nm by changing substrate temperature. The effect of substrate temperature, film thickness and sputtering method on structural, electrical and optical properties were investigated. The results show that substrate temperature and film thickness substantially affects the film properties, especially crystallization and resistivity. The thin films grown at the lower than 150 oC showed amorphous structure. However, crystallization was detected with the furtherincrease of substrate temperature. Band gap of ITO was calculated to be about 3.64eV at the substrate temperature of 150 oC, and itwidened with substrate temperature increment. From electrical measurements the resistivity at room temperature was obtained 1.28x10-4 and 1.29x10-4 D-cm, for DC and RF sputtered films, respectively. We also measured temperature dependence resistivity and the Hall coefficient of the films, and we calculated carrier concentration and Hall mobility."
Download or read book Synthesis Deposition and Characterization of Ferroelectric Films for Electrooptic Devices written by Bahadir Tunaboylu and published by . This book was released on 1997 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effect of Substrate Bias on Properties and Microstructure of Nanotwinned Copper Thin Films Deposited by Magnetron Sputtering Systems written by Sun-Yi Chang and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reactive Sputter Deposition written by Diederik Depla and published by Springer Science & Business Media. This book was released on 2008-06-24 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.
Download or read book Integrated Passive Component Technology written by Richard Kevin Ulrich and published by Wiley-IEEE Press. This book was released on 2003-06-30 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: Table of contents
Download or read book DC Magnetron Sputtered Pure and Al Doped Cu2O Thin Films written by Sivasankar Reddy Akepati and published by LAP Lambert Academic Publishing. This book was released on 2015-11-04 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting metal oxide thin films received the attention of many researchers for application in transparent electronics such as heterojunction solar cells, gas sensors, electrochromic devices, optoelectronic devices etc. Cuprous oxide (Cu2O) and copper aluminum oxide (CuAlO2) are transparent oxides exhibiting p-type conductivity. The properties of these materials in thin film mainly depend on the method of preparation and deposition conditions maintained during film growth. This book restrains the optimized deposition conditions of Cu2O and CuAlO2 films deposited on glass substrates using dc reactive magnetron sputtering technique, and investigated their structural, composition, microstructure, surface morphology, optical and electrical properties.The promising approach to prepare device quality films for optoelectronic devices was discussed clearly in this book
Download or read book The Effect of Substrate Temperature on the Structure and Properties of Vacuum Deposited Films written by G. Owen and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book TiA1N Films Deposited by AC Reactive Magnetron Sputtering written by George Clinton Vandross and published by . This book was released on 2012 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: TiAlN films were deposited on glass substrates by AC magnetron sputtering at 2 kW with constant Argon and Nitrogen gas flow rates to study the effects of positioning on the deposited films. The deposition system used was an ICM-10 IsoFlux cylindrical magnetron sputtering chamber. The samples were placed in different positions and tilts with respect to the location of the Titanium and Aluminum targets in the chamber. It was found that with change in position and application of tilts, deposited films acquired different physical and chemical properties. It is believed that the differences in these properties were caused by to the change in the incident angle of bombardment of the samples, and the change in surface areas of the samples presented to the targets at each location. As related to the physical traits of the samples, analysis using Scanning Electron Microscopy of the samples displayed variations in the topography, where differences in grain density could be noted as well as structure formations. The chemical properties were also noted to be affected by the variation of tilt and position applied to the sample. X-ray Diffraction Spectroscopy analysis of the samples showed the intensity of the TiAlN characteristic peak of the samples to differ from sample to sample. Results from the XRD analysis of this work showed a 157% and 176% increase in peak intensity of the 0° tilt sample of the Bottom Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. The results from the XRD analysis of this work also showed a 74% and 151% increase of the peak intensity for the 0° tilt sample of the Middle Plate when compared to the 45° tilt sample and 60° tilt sample respectively of the same plate. Whereas results for this work showed a 54% and 41% decrease in peak intensity of the 0° tilt sample of the Top Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. Energy Dispersive X-ray Spectroscopy was also performed and showed the deposited elements in each sample. A relationship between the distance from sample to target, and applied tilt of sample to the amount of Ti concentration was generated using the peak intensity information from the EDX. EDX analysis showed that as tilt was applied and the incident angle of bombardment approaches 0° the Ti concentration increased.
Download or read book Journal of the Physical Society of Japan written by and published by . This book was released on 1999 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Strain on Dielectric Properties of Ferroelectric Ba0 5Sr0 5TiO3 FILM S written by Hongrui Liu and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Owing to the large electric-field-dependent permittivity, ferroelectric thin films have attracted a great deal of attention on applications in miniature tunable microwave components with high performance and cost reduction, such as phase shifters, tunable oscillators, delay lines, and antennas. These tunable devices require large change in the dielectric constant with applied field and a low loss at microwave frequencies. As one of the promising ferroelectric materials, barium strontium titanate thin film, especially Ba0.5Sr0.5TiO3 (BST) films, have raises great research interests due to its high dielectric constant, which is tunable in an external electric field, combined with relative low loss at microwave frequencies. Tunable microwave components, such as phase shifter, based on the BST films have been widely investigated. Since the polarization, the significant characterization of ferroelectrics, is very sensitive to distortion in crystal structure of ferroelectrics, strain can be effectively utilized to tailor the dielectric properties of BST films. Due to the lattice-mismatch from the substrate and various deposition conditions, epitaxial BST thin film usually contains residual strain generated during film growth. Strain control by improved deposition technique and implementing thermal treatment as well as choosing suitable substrate has attracted intensive attentions in ferroelectric film fabrication. Theory predicts that high dielectric properties can be achieved when free strain or slightly tensile strain left in the BST thin film at room temperature. Microwave application, such as phase shifter, also expects the enhanced tunability by an applied electric field. In this dissertation, single crystalline BST thin films deposited by radio frequency magnetron sputtering on SrTiO3 and DyScO3 substrates were studied. The crystal structure characteristics, including lattice parameters and film strain, were determined using X-ray diffraction. A new growth technique, three-step technique, was introduced and implemented into BST thin film deposition. The application of this new technique in deposition dramatically reduced the compressive strain in the films. We use microwave measurements on coplanar waveguides to evidence the improvement on dielectric properties achieved by tailoring the film strain. Additionally, we studied the BST film deposited by pulsed laser deposition (PLD) with introducing a sputtered seed layer of BST thin film. Compared with the BST film directly deposited on the substrate by PLD deposition, the films with a seed layer showed a large enhancement on the dielectric constant and tunability. The discussion on the change in film strain and dielectric performance of the PLD deposited films further proved the influence of film strain on dielectric properties. We discussed the design, fabrication, and measurement of coplanar waveguide transmission lines as phase shifters fabricated BST films. The thin BST films (~700 nm) on DyScO3 substrates deposited by sputtering demonstrated that the three-step deposition technique improved differential phase shift and microwave figure of merit to a great extent. The introduction of the sputtered seed layer into the PLD deposition of a thicker BST film (~2.15 [micro]m) showed a dramatically enhancement on differential phase shift and microwave figure of merit. The enhanced performance on different series of BST films in microwave frequencies is consistent with the improvement on crystal structure, especially with the change in film strain.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
