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Book ECR Plasma assisted Deposition of Al2O3 and Dispersion strengthened AlO2

Download or read book ECR Plasma assisted Deposition of Al2O3 and Dispersion strengthened AlO2 written by and published by . This book was released on 1995 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book ECR Plasma assisted Deposition of Al2Osub 3 and Dispersion strengthened AlO2

Download or read book ECR Plasma assisted Deposition of Al2Osub 3 and Dispersion strengthened AlO2 written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book ECR Plasma assisted Deposition of Al sub 2 O sub 3  and Dispersion strengthened AlO sub 2

Download or read book ECR Plasma assisted Deposition of Al sub 2 O sub 3 and Dispersion strengthened AlO sub 2 written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron cyclotron resonance (ECR) O[sub 2] plasmas, in conjunction with electron-beam evaporation of Al, were used to grow thick AlO[sub x] films were varying but controlled composition and microstructure. The ion energy was varied from 30 to 190 eV, and growth temperatures varied from 35[degrees]C to 400[degrees]C. The ECR-film compositions were varied from AlO[sub 0.1] to Al[sub 2]O[sub 3] by controlling the plasma parameters and Al deposition rate. The Al-rich alloys exhibited a fine-grain (10-100 nm) fcc Al microstructure with [gamma]-Al[sub 2]O[sub 3] precipitates ([approximately]1 nm), similar to that found in the gigapascal-strength O-implanted Al. The measured hardness of the ECR Al-O alloys ([approximately]3 GPa) was also similar to the ion-implanted alloys which implies that the yield strength of the ECR material is [approximately]1 GPa. Moreover, the Al-O alloys retain much of the elasticity of the Al metal matrix. As-deposited stoichiometric Al[sub 2]O[sub 3] samples grown with an applied bias of -140 to -160 V at 400[degrees]C were fine-grain polycrystalline [gamma]-Al[sub 2]O[sub 3]. The amorphous films crystallized into the [gamma]-Al[sub 2]O[sub 3] phase upon vacuum annealing to 800[degrees]C.

Book Ion Beam Modification of Materials

Download or read book Ion Beam Modification of Materials written by J.S. Williams and published by Newnes. This book was released on 2012-12-02 with total page 1157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Atomic Layer Deposition for Semiconductors

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Book Government Reports Announcements   Index

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1995 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metals Abstracts

Download or read book Metals Abstracts written by and published by . This book was released on 1992 with total page 1516 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Atomic Layer Deposition of Nanostructured Materials

Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.

Book Power GaN Devices

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Principles of Vapor Deposition of Thin Films

Download or read book Principles of Vapor Deposition of Thin Films written by Professor K.S. K.S Sree Harsha and published by Elsevier. This book was released on 2005-12-16 with total page 1173 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. Principles of Vapor Deposition of Thin Films brings in to one place a diverse amount of scientific background that is considered essential to become knowledgeable in thin film depostition techniques. Its ultimate goal as a reference is to provide the foundation upon which thin film science and technological innovation are possible. * Offers detailed derivation of important formulae. * Thoroughly covers the basic principles of materials science that are important to any thin film preparation. * Careful attention to terminologies, concepts and definitions, as well as abundance of illustrations offer clear support for the text.

Book Beam Processing of Advanced Materials

Download or read book Beam Processing of Advanced Materials written by Jogender Singh and published by ASM International(OH). This book was released on 1996 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings covered a vast array of subject matter including: Plasma Etching, High Value Materials, Low power Electronics, Nitrogen Interaction, Diamond-like Materials, Practicle-Solid Interaction, Laser Chemical Vapor Deposition, Solar Load and reflectivity, Energetic Particle Synthesis, Freeform Fabrication, NASA's Space Shuttle, ceramics, Solid liquid Interface Shape Stability, Surface Modification Technologies, Solute Segregation-Induced Instability, Temperature Calculations, Welding, Microstructural Evolution and much more...

Book Ceramic Abstracts

    Book Details:
  • Author : American Ceramic Society
  • Publisher :
  • Release : 1996
  • ISBN :
  • Pages : 1000 pages

Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1996 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Verified Synthesis of Zeolitic Materials

Download or read book Verified Synthesis of Zeolitic Materials written by H. Robson and published by Gulf Professional Publishing. This book was released on 2001-06-26 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zeolite synthesis is an active field of research. As long as this continues, new phases will be discovered and new techniques for preparing existing phases will appear. This edition of Verified Synthesis of Zeolitic Materials contains all the recipes from the first edition plus 24 new recipes. Five new introductory articles have been included plus those from the first edition, some of which have been substantially revised. The XRD patterns have been recorded using different instrument settings from those in the first edition and are intended to conform to typical X-ray diffraction practice. In most cases, only the XRD pattern for the productas synthesised is printed here. The exceptions are those phases which show marked changes in the XRD pattern upon calcination.