Download or read book Doping Profile Engineering for Advanced Transistors written by Peng Lu and published by . This book was released on 2020 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last decades, conventional scaling (Moore's law) has provided continuous improvement in semiconductor device/circuit technology. FinFETs, featuring superior electrostatic control compared to planer FETs, have been the mainstream technology for the front-end-of-line (FEoL) application since the 22-nm node. Process-induced performance variation, which is already a key limit in 7/10-nm node FinFETs, is becoming even more severe in beyond 5-nm node. Furthermore, FinFETs' analog/RF performances are inferior to those in bulk and SOI transistors, preventing their applications in the system on chip (SoC) designs. In this work, 3D source/drain extension (SDE) doping profile control technique, developed for ION/IOFF enhancement in 7/10-nm node FinFET, is proposed as an effective method for variability suppression and digital/analog performance enhancement in the 3-nm node. The methodology of 3D doping profile optimization and governing physics are systematically analyzed. In addition to transistor scaling, wafer-level packaging (WLP) has also been widely accepted as a pathway to further increase the device density. Active device integration in the back-end-of-line (BEoL) has been proposed to enhance the interconnect bandwidth, design flexibility, and reduce power consumption. Multi-layered molybdenum disulfide (MoS2), featuring a finite bandgap, high mobility, and possible CMOS BEoL compatible (400 C) synthesis process, is a promising candidate for such an application. One of the major roadblocks in MoS2 FET's fabrication is the lack of the controllable doping process for S/D formation. This work demonstrates a carrier control technique in MoS2 by introducing substitutional Nb. The impact of high concentration Nb is quantified to precisely modulate the carrier density. Electrical characterizations show that a high carrier density (2 1020 cm-3) can be achieved, favorable for S/D formation with low access resistance. The relations between high concentration Nb and mobility, contact resistivity, and bandgap are also analyzed to guide MoS2 transistor design.
Download or read book Advanced Channel Engineering for Thin Body Transistors written by Po-Yen Chien and published by . This book was released on 2016 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: As transistor dimension kept scaling down, many challenges arises such as worse electrostatic control and higher variability. In order to address these issues, thin down body thickness is widely accepted and device structures such as FinFET and SOI are employed. Although FinFET has been adopted as main device structure by major foundries like Intel and TSMC in 20nm node and beyond, its analog performances like gm and fT are still lagging behind the bulk and SOI and prevent it from applying to SOC applications. In order to maintain the scaling trend, new materials and/or novel device design is needed. Therefore, channel engineering by using laterally composed with different electron affinities along the channel is proposed to show improved analog performance. Besides thinning down body thickness, there are other methods to realize thin body and one of them is applying channel engineering by employing deeply retrograde doping profile (DRCP) in bulk device. The doping profile is designed such that it behaves like a thin body device while maintaining bulk device structure. The advantage of DRCP device is that it is relatively cheap and less complicated in terms of manufacturing than those device structures with physically thinner silicon body like FinFET and SOI. It is then instructive to understand whether DRCP device can deliver comparable device performance as FinFET and SOI in 20nm regime. The physics of DRCP device is investigated by TCAD simulation tools and compared with halo device (conventional bulk device) to show the origin of the superior performance. The device performances of bulk device, DRCP, FinFET and SOI are compared to show the capability of DRCP device. The other approach to make thin body is to utilize 2D materials like transition metal di-chalcogenides (TMDs) as channel material of transistor owning to its ultra-thin body property. 2D materials such as MoS2 and WSe2 were extensively exploited recently for FET fabrication due to the good short channel effect control and potential superior carrier transport. Among these 2D materials, WSe2 is particularly attractive since p-type doping has been achieved making it possible for depletion mode p-FET. However, lack of reliable doping technique makes the doping of the WSe2 difficult to be accomplished. In this dissertation, WSe2 doped by controllable W:Ta co-sputtering process and synthesized by post selenization is demonstrated. The material synthesis and characterization of WSe2 are discussed. The transmission line method (TLM) structure is used to extract the sheet resistance and contact resistance with palladium contact. The MESFET is fabricated and the performance are discussed.
Download or read book Modeling and Simulation of Shell Doping Profile Junctionless Transistor written by 胡佳瑩 and published by . This book was released on 2017 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microelectronics Technology and Devices SBMICRO 2002 written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Doping Engineering for Device Fabrication Volume 912 written by B. J. Pawlak and published by . This book was released on 2006-10-11 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.
Download or read book Advanced MOS Devices and their Circuit Applications written by Ankur Beohar and published by CRC Press. This book was released on 2024-01-19 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Download or read book Delta doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 2005-08-22 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter sets out the basic theoretical and experimental concepts involved, the authors discuss the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth. They then present the techniques for characterizing doping distributions, followed by several chapters on the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.
Download or read book Microelectronics Microsystems And Nanotechnology Papers Presented Of At Mmn 2000 written by Androula G Nassiopoulou and published by World Scientific. This book was released on 2001-10-19 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers.
Download or read book Laterally Varying Doping Profile written by Khalid Rahmat and published by . This book was released on 1986 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microelectronics Microsystems and Nanotechnology written by Androula G. Nassiopoulou and published by World Scientific. This book was released on 2001 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers.
Download or read book Advanced CMOS Compatible Semiconductor Devices 18 written by J. A. Martino and published by The Electrochemical Society. This book was released on 2018-05-04 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-07-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Download or read book Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 6 New Materials Processes and Equipment written by E. P. Gusev and published by The Electrochemical Society. This book was released on 2010-04 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Download or read book CMOS Inverse Doping Profile Extraction and Substrate Current Modeling written by Eric Pop and published by . This book was released on 1999 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:
