Download or read book Doping Engineering for Front End Processing written by B. J. Pawlak and published by Cambridge University Press. This book was released on 2014-06-05 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Download or read book Doping Engineering for Front End Processing Volume 1070 written by Materials Research Society. Meeting Symposium E. and published by . This book was released on 2008-10-17 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Si Front End Processing Volume 669 written by Erin C. Jones and published by . This book was released on 2001-12-14 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Si Front End Processing Physics and Technology II of Dopant Defect Interactions II Volume 610 written by Aditya Agarwal and published by . This book was released on 2001-04-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Download or read book Doping Engineering for Device Fabrication Volume 912 written by B. J. Pawlak and published by . This book was released on 2006-10-11 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.
Download or read book Simulation of Semiconductor Processes and Devices 2007 written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Download or read book Si Front end Processing written by and published by . This book was released on 1999 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Introduction to Microfabrication written by Sami Franssila and published by John Wiley & Sons. This book was released on 2010-10-29 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This accessible text is now fully revised and updated, providing an overview of fabrication technologies and materials needed to realize modern microdevices. It demonstrates how common microfabrication principles can be applied in different applications, to create devices ranging from nanometer probe tips to meter scale solar cells, and a host of microelectronic, mechanical, optical and fluidic devices in between. Latest developments in wafer engineering, patterning, thin films, surface preparation and bonding are covered. This second edition includes: expanded sections on MEMS and microfluidics related fabrication issues new chapters on polymer and glass microprocessing, as well as serial processing techniques 200 completely new and 200 modified figures more coverage of imprinting techniques, process integration and economics of microfabrication 300 homework exercises including conceptual thinking assignments, order of magnitude estimates, standard calculations, and device design and process analysis problems solutions to homework problems on the complementary website, as well as PDF slides of the figures and tables within the book With clear sections separating basic principles from more advanced material, this is a valuable textbook for senior undergraduate and beginning graduate students wanting to understand the fundamentals of microfabrication. The book also serves as a handy desk reference for practicing electrical engineers, materials scientists, chemists and physicists alike. www.wiley.com/go/Franssila_Micro2e
Download or read book Silicon Carbide 2008 materials Processing and Devices written by Michael Dudley and published by . This book was released on 2008 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Download or read book Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 4 New Materials Processes and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Download or read book Silicon Front end Technology materials Processing and Modelling written by Nicholas E. B. Cowern and published by . This book was released on 1998 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Doping Profile Engineering for Advanced Transistors written by Peng Lu and published by . This book was released on 2020 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last decades, conventional scaling (Moore's law) has provided continuous improvement in semiconductor device/circuit technology. FinFETs, featuring superior electrostatic control compared to planer FETs, have been the mainstream technology for the front-end-of-line (FEoL) application since the 22-nm node. Process-induced performance variation, which is already a key limit in 7/10-nm node FinFETs, is becoming even more severe in beyond 5-nm node. Furthermore, FinFETs' analog/RF performances are inferior to those in bulk and SOI transistors, preventing their applications in the system on chip (SoC) designs. In this work, 3D source/drain extension (SDE) doping profile control technique, developed for ION/IOFF enhancement in 7/10-nm node FinFET, is proposed as an effective method for variability suppression and digital/analog performance enhancement in the 3-nm node. The methodology of 3D doping profile optimization and governing physics are systematically analyzed. In addition to transistor scaling, wafer-level packaging (WLP) has also been widely accepted as a pathway to further increase the device density. Active device integration in the back-end-of-line (BEoL) has been proposed to enhance the interconnect bandwidth, design flexibility, and reduce power consumption. Multi-layered molybdenum disulfide (MoS2), featuring a finite bandgap, high mobility, and possible CMOS BEoL compatible (400 C) synthesis process, is a promising candidate for such an application. One of the major roadblocks in MoS2 FET's fabrication is the lack of the controllable doping process for S/D formation. This work demonstrates a carrier control technique in MoS2 by introducing substitutional Nb. The impact of high concentration Nb is quantified to precisely modulate the carrier density. Electrical characterizations show that a high carrier density (2 1020 cm-3) can be achieved, favorable for S/D formation with low access resistance. The relations between high concentration Nb and mobility, contact resistivity, and bandgap are also analyzed to guide MoS2 transistor design.
Download or read book Rapid Thermal Processing written by Richard B. Fair and published by Academic Press. This book was released on 2012-12-02 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.
Download or read book Power Electronic Packaging written by Yong Liu and published by Springer Science & Business Media. This book was released on 2012-02-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.
Download or read book Ulsi Front end Technology Covering From The First Semiconductor Paper To Cmos Finfet Technology written by Lau Wai Shing and published by World Scientific. This book was released on 2017-08-23 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book. Contents: PrefaceAuthor BiographyIntroduction to the History of SemiconductorsHistory of MOS TechnologyCMOS Switching Speed Characterization and An Overview Regarding How to Speed Up CMOSLow Power CMOS EngineeringAnalog CMOS TechnologyIndex Readership: The book is useful for researchers in semiconductor technology especially practicing engineers. Keywords: Semiconductor;Integrated Circuits;CMOS;High Speed;Low Power;Digital;Analog;Mixed-Signal;Planar Technology;FINFET;MIM CapacitorReview: Key Features: The book is readable for beginnersThe book is useful for semiconductor technology historiansThe book is useful for practicing engineers
Download or read book Silicon Materials Science and Technology written by and published by . This book was released on 1998 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
