Download or read book Dopant Behavior in Complex Semiconductor Systems written by Ning Kong and published by . This book was released on 2009 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the size of modern transistors is continuously scaled down, challenges rise in almost every component of a silicon device. Formation of ultra shallow junction (USJ) with high activation level is particularly important for suppressing short channel effects. However, the formation of low resistance USJ is made difficult by dopant Transient Enhanced Diffusion (TED) and clustering-induced deactivation. In this work, we proposed a novel point defect engineering solution to address the arsenic TED challenge. By overlapping arsenic doped region with silicon interstitials and vacancies, we observed enhanced and retarded arsenic diffusion upon anneal, respectively. We explain this phenomenon by arsenic interstitial diffusion mechanism. In addition, we implemented this interstitial-based mechanism into a kinetic Monte Carlo (kMC) simulator. The key role of interstitials in arsenic TED is confirmed. And we demonstrated that the simulator has an improved prediction capability for arsenic TED and deactivation. As a long time unsolved process challenge, arsenic segregation at SiO2/Si interface was investigated using density functional theory (DFT) calculation. The segregation-induced arsenic dose loss not only increases resistance but also may induce interface states. We identified three arsenic complex configurations, [chemical formula], [chemical formula] and [chemical formula], which are highly stabilized at SiO2/Si interface due to the unique local bonding environments. Therefore, they could contribute to arsenic segregation as both initial stage precursors and dopant trapping sites. Our calculation indicates that arsenic atoms trapped in such interface complexes are electrically inactive. Finally, the formation and evolution dynamics of these interface arsenic-defect complexes are discussed and kMC models are constructed to describe the segregation effects. A potential problem for the p-type USJ formation is the recently found transient fast boron diffusion during solid phase epitaxial regrowth process. Using DFT calculations and molecular dynamics simulation, we identified an interstitial-based mechanism of fast boron diffusion in amorphous silicon. The activation energy for this diffusion mechanism is in good agreement with experimental results. In addition, this mechanism is consistent with the experimentally reported transient and concentration-dependent features of boron diffusion in amorphous silicon.

Download or read book Heavily Doped Semiconductors written by V. I. Fistul and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.

Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

Download or read book Defects in Optoelectronic Materials written by Kazumi Wada and published by CRC Press. This book was released on 2022-09-16 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif

Download or read book Delta doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Download or read book Thin Film Processes II written by Werner Kern and published by Elsevier. This book was released on 2012-12-02 with total page 881 pages. Available in PDF, EPUB and Kindle. Book excerpt: This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. - Provides an all-new sequel to the 1978 classic, Thin Film Processes - Introduces new topics, and several key topics presented in the original volume are updated - Emphasizes practical applications of major thin film deposition and etching processes - Helps readers find the appropriate technology for a particular application

Download or read book Coherent Optical Interactions in Semiconductors written by R.T. Phillips and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.

Download or read book Complex Doping of Group 13 Elements In and Ga in Caged Skutterudite CoSb3 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Computational Approaches to Materials Design Theoretical and Practical Aspects written by Datta, Shubhabrata and published by IGI Global. This book was released on 2016-06-16 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of new and superior materials is beneficial within industrial settings, as well as a topic of academic interest. By using computational modeling techniques, the probable application and performance of these materials can be easily evaluated. Computational Approaches to Materials Design: Theoretical and Practical Aspects brings together empirical research, theoretical concepts, and the various approaches in the design and discovery of new materials. Highlighting optimization tools and soft computing methods, this publication is a comprehensive collection for researchers, both in academia and in industrial settings, and practitioners who are interested in the application of computational techniques in the field of materials engineering.

Download or read book Defect Induced Magnetism in Oxide Semiconductors written by Parmod Kumar and published by Elsevier. This book was released on 2023-05-26 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more

Download or read book Noise in Physical Systems and 1 f Fluctuations written by Gijs Bosman and published by World Scientific. This book was released on 2001 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide. Contents: Noise in Nanoscale Devices (S Bandyopadhyay et al.); 1/f Voltage Noise Induced by Magnetic Flux Flow in Granular Superconductors (O V Gerashchenko); Low Frequency Noise Analysis of Different Types of Polysilicon Resistors (A Penarier et al.); Low Frequency Noise in CMOS Transistors: An Experimental and Comparative Study on Different Technologies (P Fantini et al.); Modeling of Current Transport and 1/f Noise in GaN Based HBTs (H Unlu); Low Frequency Noise in CdSe Thin Film Transistors (M J Deen & S Rumyanstsev); NIST Program on Relative Intensity Noise Standards for Optical Fiber Sources Near 1550 nm (G Obarski); Physical Model of the Current Noise Spectral Density Versus Dark Current in CdTe Detectors (A Imad et al.); Time and Frequency Study of RTS in Bipolar Transistors (A Penarier et al.); Neural Network Based Adaptive Processing of Electrogastrogram (S Selvan); Shot Noise as a Test of Entanglement and Nonlocality of Electrons in Mesoscopic Systems (E V Sukhorukov et al.); The Readout of Time, Continued Fractions and 1/f Noise (M Planat & J Cresson); Longitudinal and Transverse Noise of Hot Electrons in 2DEG Channels (J Liberis et al.); 1/f Noise, Intermittency and Clustering Poisson Process (F Gruneis); Noise Modeling for PDE Based Device Simulations (F Bonani & G Ghione); Methods of Slope Estimation of Noise Power Spectral Density (J Smulko); and other papers. Readership: Researchers, academics and graduate students in electrical and electronic engineering, biophysics, nanoscience, applied physics, statistical physics and semiconductor science.

Download or read book Localized Electronic Behavior of Large Bandgap Semiconductor Systems written by James Christopher Moore and published by . This book was released on 2007 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carriers in Semiconductors written by J. Shah and published by Elsevier. This book was released on 2013-10-22 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.

Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1988-12-24 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals

Download or read book Noise In Physical Systems And 1 f Fluctuations Icnf 2001 Procs Of The 16th Intl Conf written by Gijs Bosman and published by World Scientific. This book was released on 2001-08-20 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.

Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics