Download or read book Diffusion of Phosphorus and Boron Into Silicon Through Silicon Monoxide Layers written by Chao-Chen Mai and published by . This book was released on 1967 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Phosphorous and Boron Into Silicon Through Silicon Monoxide Layers written by Chao-Chen Mai and published by . This book was released on 1968 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Phosphorus Diffusion Into Silicon Through an Oxide Layer written by Dawon Kahng and published by . This book was released on 1959 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Boron and Phosphorus Into Silicon written by David Joseph Ager and published by . This book was released on 1969 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1971 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Boron Into Silicon from an Oxide Source written by P. J. Gregory and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Diffusion of Boron and Phosphorus in Silicon written by Teh Ming Ou and published by . This book was released on 1965 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents some experimental results for producing controlled PN and NPN diffused structures in silicon by varying the strength of the diffusion sources. Boron diffusions were carried out in a N2 atmosphere at 1200°C with 10%, 20%, 30% and 40% B203 in silicic acid as sources. Phosphorus diffusions were carried out at 1150°C with a P205, source at temperatures of 220°C, 300°C, 400°C and 500°C and 02 as a carrier gas. For boron diffusions, the surface concentration of the boron impurity atoms diffused into an N-type silicon wafer varied from 2.18 x 1017 to 1.45 x 1020 atoms/cm3 as the composition of the source was changed. Similarly, for phosphorus diffusions, the surface concentration of phosphorus impurity atoms diffused into a P-type silicon wafer varied from 1.8 x 1018 to 9.5 x 1021 atoms/cm3 as the temperature of the source was changed. Post-diffusion, which consists of heating a silicon wafer previously diffused with impurity atoms, was investigated to impurity atoms. structures were determine the Using these fabricated by redistribution of the results, NPN and FNP double diffusions.
Download or read book Solar Energy Update written by and published by . This book was released on 1981-10 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The effects of making oxide on the diffusion of boron into silicon written by Shuja Ahmad Abbasi and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Auger Electron Spectroscopy written by Donald T. Hawkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.
Download or read book Semiconductors written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...
Download or read book Solid Circuits and Microminiaturization written by G. W. A. Dummer and published by Elsevier. This book was released on 2014-05-16 with total page 357 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solid Circuits and Microminiaturization is a collection of the proceedings of the Conference on Solid Circuits and Microminiaturization held at West Ham College of Technology in the UK in June 1963. The conference provided a forum for discussing trends in the microminiaturization of solid circuits and covered a wide range of topics related to the subject, including the design and manufacture of solid circuits; solid circuit fabrication techniques and the resulting passive component characteristics; and equipment design philosophy using integrated circuits. This book is comprised of 27 chapters and begins with an overview of the status and trends in microminiaturization, followed by a description of the techniques used to fabricate solid state circuits and a comparison of the properties of various types of solid state circuits. Subsequent chapters focus on the approaches used in the design and manufacture of solid circuits; characteristics and application of micrologic elements; techniques for the use of solid circuits together with conventional components in miniaturized assemblies; and the application of solid state circuits to computer design. High-speed integrated digital circuits and a group of integrated circuits for linear amplification are also described. This monograph will be of particular value to electronics engineers and systems designers.
Download or read book Semiconductor Physics written by Karlheinz Seeger and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects.
