Download or read book Diffusion of Boron and Phosphorus Into Silicon written by David Joseph Ager and published by . This book was released on 1969 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Boron Doping on the Diffusion of Phosphorus in Silicon written by William Henry Drake and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Phosphorus and Boron Into Silicon Through Silicon Monoxide Layers written by Chao-Chen Mai and published by . This book was released on 1967 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Boron and Phosphorus in Silicon written by Teh Ming Ou and published by . This book was released on 1965 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents some experimental results for producing controlled PN and NPN diffused structures in silicon by varying the strength of the diffusion sources. Boron diffusions were carried out in a N2 atmosphere at 1200°C with 10%, 20%, 30% and 40% B203 in silicic acid as sources. Phosphorus diffusions were carried out at 1150°C with a P205, source at temperatures of 220°C, 300°C, 400°C and 500°C and 02 as a carrier gas. For boron diffusions, the surface concentration of the boron impurity atoms diffused into an N-type silicon wafer varied from 2.18 x 1017 to 1.45 x 1020 atoms/cm3 as the composition of the source was changed. Similarly, for phosphorus diffusions, the surface concentration of phosphorus impurity atoms diffused into a P-type silicon wafer varied from 1.8 x 1018 to 9.5 x 1021 atoms/cm3 as the temperature of the source was changed. Post-diffusion, which consists of heating a silicon wafer previously diffused with impurity atoms, was investigated to impurity atoms. structures were determine the Using these fabricated by redistribution of the results, NPN and FNP double diffusions.
Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Diffusion of Phosphorous and Boron Into Silicon Through Silicon Monoxide Layers written by Chao-Chen Mai and published by . This book was released on 1968 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Download or read book Studies on the Effect of Plastic Deformation and Surface Concentration on Boron and Phosphorus Diffusion in Silicon written by Richard Charles Booth and published by . This book was released on 1974 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Phosphorous and Boron in Silicon written by Pravin Chandra Parekh and published by . This book was released on 1967 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Boron Into Silicon from an Oxide Source written by P. J. Gregory and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Relationship Between Resistivity and Dopant Density for Phosphorus and Boron doped Silicon written by and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Boron in Silicon written by Colin Graham Hart and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Introduction to Microfabrication written by Sami Franssila and published by John Wiley & Sons. This book was released on 2005-01-28 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.
Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Download or read book Reduction of Shallow Boron and Phosphorus Diffusion by Co implantation written by Aaron Vanderpool and published by . This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
