Download or read book Development of Low temperature Deposition Processes by Atomic Layer Epitaxy for Binary and Ternary Oxide Thin Films written by Matti Putkonen and published by . This book was released on 2002 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Estonian Academy of Sciences Physics and Mathematics written by and published by . This book was released on 2003-09 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition ALD written by Callisto Joan MacIsaac and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern society demands smaller, more precise devices for both microelectronic and energy technologies. The development of methods and processes that can deposit reliably uniform, conformal thin films on the nanoscale is essential to fields as diverse as catalysts and solar cells. Therefore, atomic layer deposition (ALD), a thin-film deposition technique that accomplishes these goals by using self-limiting sequential reactions between alternating precursors to achieve atomic precision over the product film, is an important tool for the modern era. Combining ALD with molecular layer deposition (MLD), which follows the same principles as ALD but deposits entire organic molecules to build films, results in a powerful system that enables the deposition of inorganic, organic, and hybrid inorganic-organic materials. Understanding the nucleation mechanisms, surface reaction chemistry, and applications of these materials and ALD/MLD processes is essential to commercialization and wider use. Through in situ Fourier transform infrared (FTIR) spectroscopy, we studied the zinc-tin-oxide (ZTO) system, a ternary ALD process that is a combination of the zinc oxide and tin oxide binary ALD processes. Previous research had indicated that the ternary system is characterized by non-idealities in the ALD growth, and we identify as a potential cause of these effects incomplete removal of the ligands from the tetrakis(dimethylamino)tin precursor, which leads to a nucleation delay when depositing ZnO on SnO2. A significant fraction of the ligands remain on the surface during the ALD of SnO2 and endure when the process is switched to ZnO ALD. This result suggests that the occupation of surface reactive sites by these persisting ligands may be the cause of the observed nucleation delay with potential ramifications for many other binary and ternary systems where persisting ligands may be present. In addition, we studied the mechanism of ALD-grown MoS2 thin films. It was observed by atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and X-ray reflectivity (XRR) that nucleation proceeds by the formation of small islands that coalesce into a complete film in under 100 cycles, with further film growth failing to occur after coalescence. This inertness is attributed to the chemical inactivity of the basal planes of MoS2. It was found that the final thickness of the as-grown film is not determined by the number of ALD cycles as per the normal regime, but by the temperature that the film is deposited at. This self-limiting layer synthesis (SLS) has been reported in the literature for higher temperature depositions of MoS2, but this is the first report of the effect in a low temperature, amorphous MoS2 ALD system. The thickness of films growth by ALD with the precursors Mo(CO)6 and H2S was found to saturate at around 7 nm on both native oxide-covered silicon and bulk crystalline MoS2 substrates, which may indicate that the SLS behavior is inherent to the ALD process and not substantially a product of the substrate surface potential. Finally, we demonstrated a new ALD/MLD hybrid process that used the MoS2 ALD precursor Mo(CO)6 and the counter reagent 1,2-ethanedithiol to create a MoS2-like material with organic domains. This Mo-thiolate possesses many properties that link it to MoS2, such as activity towards the hydrogen evolution reaction (HER) and similar Raman modes, but has a significantly lower density, optical transparency, and higher geometric surface area. It was found that the process has a 1.3 Å growth per cycle and can catalyze the HER reaction at an overpotential of 294 mV at -10 mA/cm2 , which is superior to planar MoS2 and ranks the as-deposited catalyst with the best nanostructured MoS2-based catalysts. We propose that this activity comes from the higher surface area induced by the incorporation of organic chains into the films. In summary, we explored the mechanisms and nucleation behavior of several ALD systems of interest to energy applications using both in situ and ex situ analysis techniques. These studies demonstrated the importance of understanding ALD surface chemistry to the overall chemical composition of the resultant films, the ramifications of different nucleation regimes in determining morphologies, and the power of ALD/MLD in creating analogues to previously known species with improved physical properties.

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Download or read book Low Temperature Epitaxial Growth of Semiconductors written by Takashi Hariu and published by World Scientific. This book was released on 1991 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Download or read book Deposition of Binary and Ternary Oxide Thin Films of Trivalent Metals by Atomic Layer Epitaxy written by Minna Nieminen and published by . This book was released on 2001 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition Applications 14 written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2018-09-21 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development and Applications of Oxide Thin Films Using Atomic Layer Deposition and Prompt Inorganic Condensation written by Sean Weston Smith and published by . This book was released on 2015 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first part of this work, thin films of Al2O3 deposited via atomic layer deposition (ALD) are demonstrated to improve the thermal stability of cellulose nanocrystal (CNC) aerogels. ALD is a chemical vapor deposition (CVD) like method in which sequential precursor exposures and self-limited surface reactions produce a conformal thin film with precise thickness control. The conformal nature of ALD is well suited to coating the porous microstructure of aerogels. SEM micrographs of coating thickness depth profiles are shown to agree with trends predicted by precursor penetration models. Thermogravimetric analysis shows samples coated with ALD Al2O3 have increased decomposition temperatures. In the second part of this work, ALD zinc tin oxide (ZTO) is used to demonstrate a technique for measuring the substrate inhibited growth in multicomponent and laminate ALD systems. The thickness control of ALD makes it attractive for multicomponent and laminate systems. However, the surface reactions of ALD mean that the first few cycles, while the film nucleates, may have a different growth per cycle (GPC) than when the film is growing on itself in a bulk growth regime. A model for the substrate inhibited ALD of ZTO is derived from two complementary sets of laminates. The thickness and composition predictions of our model are tested against the bulk GPC of ZnO and SnO2. In the final part of this work, prompt inorganic condensation (PIC) is explored as a potentially more environmentally friendly alternative to ALD for planar thin film applications. Whereas ALD requires expensive vacuum systems and has low precursor utilization, solution based methods, such as PIC, allow atmospheric processing and precursor recycling. The water based PIC solutions use nitrate counter ions which evaporate at low temperatures. Combined with the low energy required to convert the hydroxide precursor clusters into an oxide film makes PIC a promising low temperature route to dense solution processed thin films. The dielectric performance of PIC Al2O3 is shown to be comparable to ALD Al2O3 films on Si though a large interfacial SiO2 layer is found to be dominating the behavior of the PIC films. This interfacial layer is shown to form very quickly (≤ 2 min) at low temperatures (≤ 50°C). This low temperature interfacial oxide growth could be a benefit in passivating solar cells.

Download or read book Eesti Teaduste Akadeemia Toimetised written by and published by . This book was released on 2003 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition Applications 7 written by J. W. Elam and published by The Electrochemical Society. This book was released on 2011 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Epitaxy written by T. Suntola and published by Springer. This book was released on 2011-09-20 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently £3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.

Download or read book Atomic Layer Deposition Applications 2 written by Ana Londergan and published by The Electrochemical Society. This book was released on 2007 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue gives an overview of the cutting edge research in the various areas where Atomic Layer Deposition (ALD) can be used, enabling the identification of issues, challenges, and areas where further research is needed. Contributions include: Memory applications, Interconnects and contacts, ALD Productivity enhancement and precursor development, ALD for optical and photonic applications, and Applications in other areas, such as MEMs, nanotechnology, fabrication of sensors and catalysts, etc.

Download or read book Atomic Layer Deposition Applications 6 written by J. W. Elam and published by The Electrochemical Society. This book was released on 2010-10 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the focus of this reoccurring symposium. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topographies with controlled thickness and composition. This issue of ECS Transactions contains peer reviewed papers presented at the symposium. A broad spectrum of ALD applications is featured, including novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics, and a variety of other emerging applications.

Download or read book Atomic Layer Deposition of Binary and Ternary Lead and Bismuth Oxide Thin Films written by Jenni Harjuoja and published by . This book was released on 2007 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition Applications 5 written by S. de Gendt and published by The Electrochemical Society. This book was released on 2009-09 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic Layer Deposition can enable precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties for a wide range of applications.

Download or read book Plasma Assisted Atomic Layer Deposition of III Nitride Thin Films written by Çağla Özgit-Akgün and published by LAP Lambert Academic Publishing. This book was released on 2014-03 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."

Download or read book Atomic Layer Deposition written by David Cameron and published by MDPI. This book was released on 2020-12-28 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition (ALD) is a thin film deposition process renowned for its ability to produce layers with unrivaled control of thickness and composition, conformability to extreme three-dimensional structures, and versatility in the materials it can produce. These range from multi-component compounds to elemental metals and structures with compositions that can be adjusted over the thickness of the film. It has expanded from a small-scale batch process to large scale production, also including continuous processing – known as spatial ALD. It has matured into an industrial technology essential for many areas of materials science and engineering from microelectronics to corrosion protection. Its attributes make it a key technology in studying new materials and structures over an enormous range of applications. This Special Issue contains six research articles and one review article that illustrate the breadth of these applications from energy storage in batteries or supercapacitors to catalysis via x-ray, UV, and visible optics.