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Book Design Principles and Performance of Modulation doped Field Effect Transistors for Low Noise Microwave Amplification

Download or read book Design Principles and Performance of Modulation doped Field Effect Transistors for Low Noise Microwave Amplification written by Lovell H. Camnitz and published by . This book was released on 1986 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation doped Field effect Transistors

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation doped Field effect Transistors

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Materials Science and Technology  Strained Layer Superlattices

Download or read book Materials Science and Technology Strained Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.

Book The RF and Microwave Handbook   3 Volume Set

Download or read book The RF and Microwave Handbook 3 Volume Set written by Mike Golio and published by CRC Press. This book was released on 2018-10-08 with total page 2208 pages. Available in PDF, EPUB and Kindle. Book excerpt: By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.

Book American Doctoral Dissertations

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation doped Field Effect Transistors for High power Microwave Applications

Download or read book Modulation doped Field Effect Transistors for High power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.

Book HEMTs and HBTs

Download or read book HEMTs and HBTs written by Fazal Ali and published by Artech House Microwave Library. This book was released on 1991 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.

Book A Physical Model for the Bias Dependence of the Modulation doped Field effect Transistor s High frequency Performance

Download or read book A Physical Model for the Bias Dependence of the Modulation doped Field effect Transistor s High frequency Performance written by Mark Christopher Foisy and published by . This book was released on 1990 with total page 786 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low Noise Systems in the Deep Space Network

Download or read book Low Noise Systems in the Deep Space Network written by Macgregor S. Reid and published by Wiley-Blackwell. This book was released on 2008-09-29 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book explores the low-noise microwave systems that form the front end of all DSN ground receiving stations. It explains why the front end of each antenna is key to establishing the sensivity, polarization, frequency diversity, and capabilities of the receiving chain and, therefore, the entire ground station.

Book Frontiers of Thin Film Technology

Download or read book Frontiers of Thin Film Technology written by and published by Academic Press. This book was released on 2000-11-07 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.

Book High speed Electronics and Device Scaling

Download or read book High speed Electronics and Device Scaling written by Lester F. Eastman and published by . This book was released on 1990 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book RF and Microwave Semiconductor Device Handbook

Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Book Principles and Technology of MODFETs

Download or read book Principles and Technology of MODFETs written by Hadis Morko? and published by Wiley. This book was released on 1991-07-09 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: An acknowledged world authority on modulation doped field effect transistors (MODFETS) offers a detailed comparison of MODFETS performance--both as microwave and digital devices--with other structures. Concentrates on basic aspects of design and measurement in electronic engineering. Introductory material on heterojunction and semiconductor physics include crystalline structures, dynamics of interfaces, carrier densities, band discontinuities plus the treatment of stress and strain and their effect on the band structures.

Book The Use of Buried Beryllium doped Layers to Reduce Buffered Current in Low Noise Pseudomorphic Modulation doped Field effect Transistors

Download or read book The Use of Buried Beryllium doped Layers to Reduce Buffered Current in Low Noise Pseudomorphic Modulation doped Field effect Transistors written by Stephen Frank Anderson and published by . This book was released on 1988 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: