Download or read book Design and Switching Performance Evaluation of a 10 KV SiC MOSFET Based Phase Leg for Medium Voltage Applications written by Xingxuan Huang and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: 10 kV SiC MOSFETs are promising to substantially boost the performance of future medium voltage (MV) converters, ranging from MV motor drives to fast charging stations for electric vehicles (EVs). Numerous factors influence the switching performance of 10 kV SiC MOSFETs with much faster switching speed than their Si counterparts. Thorough evaluation of their switching performance is necessary before applying them in MV converters. Particularly, the impact of parasitic capacitors in the MV converter and the freewheeling diode is investigated to understand the switching performance more comprehensively and guide the converter design based on 10 kV SiC MOSFETs.A 6.5 kV half bridge phase leg based on discrete 10 kV/20 A SiC MOSFETs is designed and fully validated to operate continuously at rated voltage with dv/dt up to 80 V/ns. Based on the phase leg, the impact of parasitic capacitors brought by the load inductor and the heatsink on the switching transients and performance of 10 kV SiC MOSFETs is investigated. Larger parasitic capacitors result in more oscillations, longer switching transients, as well as higher switching energy loss especially at low load current. As for the freewheeling diode, the body diode of 10 kV SiC MOSFETs is suitable to serve as the freewheeling diode, with negligible reverse recovery charge at various temperatures. The switching performance with and without the anti-parallel SiC junction barrier Schottky (JBS) diode is compared quantitatively. It is not recommended to add an anti-parallel diode for the 10 kV SiC MOSFET in the converter because it increases the switching loss.

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Download or read book Automated Design of Electrical Converters with Advanced AI Algorithms written by Xin Zhang and published by Springer Nature. This book was released on 2023-04-21 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: A power converter is a device used in electrical engineering, power engineering, and the electric power sector to convert electric energy from one form to another, such as converting between AC and DC, changing voltage or frequency, or a combination of these. It is used in a variety of applications, such as industrial drives, power supply, energy generating equipment, consumer goods, electrical vehicles/aeroplanes/ships, smart grids and more.This book will open a door for engineers to design the power converters via the artificial intelligence (AI) method. It begins by reviewing current AI technology in power converters. The book then introduces customized AI algorithms for power converters that take into account the particular characteristics of power converters. The book then presents a set of AI-based design methodologies for power devices, including DC/DC converters, resonant DC/DC converters, bidirectional DC/DC converters, DC/AC inverters, and AC/DC rectifiers. This is the first book to cover all you need to know about using AI to create power converters, including a literature review, algorithm, and circuit design.

Download or read book Design and Process Developments Towards an Optimal 6 5 KV SiC Power MOSFET written by Victor Soler and published by . This book was released on 2020 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: A sustainable future requires efficient power electronic converters at any stage of the electrical energy consumption. Silicon carbide (SiC) is one of the most technologically advanced wide bandgap semiconductors that can outperform silicon limits for power devices. SiC power MOSFETs are of the greatest interest since they are unipolar gate-controlled switches with high blocking voltage capability and reasonably low specific on-resistance. The focus of this thesis is on the design optimisation and process technology refinement towards the improvement of high-voltage SiC MOSFETs. Previous developments in our group were taken as a reference for this work. The results of this research allowed the fabrication of large-area SiC power MOSFETs with voltage ranges targeting 1.7 kV up to 6.5 kV.The inherent properties of SiC entail challenging technological solutions to successfully integrate a power MOSFET of such high-voltage capability. To ensure suitable blocking capability, different planar edge termination structures have been designed, optimised by TCAD simulation and implemented on PiN diodes. The termination schemes considered are single-zone JTE, FGRs and a novel RA-JTE structure combining JTE with rings. RA-JTE design, with the lowest sensitivity to fabrication process deviations and a lower consumed area, achieved more than 90% of the ideal breakdown voltage and suitable blocking capability up to 6.5 kV.The optimisations performed on the unit-cell of the SiC power MOSFET target both the layout design and the fabrication process. The optimisation has been performed by TCAD modelling and experimental evaluation of specific test structures. Several techniques to improve the performance of the fabricated devices have been considered: i) the use of an offset retrograde p-body profile to provide an adequate Vth value while preventing p-body punch-through, ii) a submicronic self-aligned channel definition, iii) a boron treatment to the gate oxide to improve channel mobility, iv) a discrete location of the p-contact to reduce cell-pitch, v) the use of a lower-doped-source (LDS) to improve reliability, vi) the optimisation of the JFET area, and vii) the integration of gate runners to improve the switching performance. As a result of these investigations, a full mask-set were designed and used for processing wafers of several voltage-class in different batches. All the fabrication steps have been carried out at IMB-CNM cleanroom. The electrical characterisation of large-area devices has evidenced an optimal Vth in the range of 5 V, a proper gate control, and a good blocking capability. We obtained relatively high specific on-resistance due to the large cell pitch dimensions required by IMB-CNM cleanroom design rules as well as a still low channel mobility. Fabricated SiC MOSFETs are capable of switching at high bus voltages (tested up to 80% of the rated voltage). Although, their switching performance is limited by internal gate resistance. Fabricated devices have shown better short-circuit capability (>15 μs) than existing commercial devices, mainly due to the cell design considerations.The evaluation of electrical performance evidenced the successful functionality of the fabricated VDMOS up to 6.5 kV and validates our new RA-JTE termination design. On the other hand, the novel boron doping treatment to the gate oxide clearly demonstrated to improve the on-resistance of our devices in all voltage classes without affecting breakdown and short-circuit capabilities. Nevertheless, it strongly compromises stability and reliability at temperatures above 100 °C. These results show that the MOS interface quality is still the major issue for the development of reliable SiC power MOSFETs.Finally, alternative SiC structures have also been investigated to take advantage of the SiC superior material properties. These include a SiC IGBT showing conductivity modulation, and a preliminary SiC CMOS cell able to operate at high temperatures.

Download or read book SiC based Miniaturized Devices written by Stephen Edward Saddow and published by MDPI. This book was released on 2020-06-18 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Download or read book Closed Loop Dv dt Control for Equal Voltage Sharing Between Series Connected SiC MOSFETs written by Vaibhav Uttam Pawaskar and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An efficient and cost-effective Medium-Voltage (MV) power semiconductor switch, which is capable of high switching speed, is highly desirable for many existing and emerging high power MV power conversion applications, such as solid-state transformers, MV motor drives, renewable energy and storage integration with the medium voltage grid, Flexible Alternating Current Transmission System (FACTS) devices etc. Emerging MV Silicon Carbide (SiC) 10 kV/15 kV MOSFETs and IGBTs can be the potential candidate for these applications. However, high cost, lack of the reliability data, and limited availability are the major hurdles for the successful adoption of these devices. Efficient and cost-effective MV switches can be also realized by series connection of reliable, and commercially available Low-Voltage (LV) devices. The main concern of the series connected SiC devices is unequal voltage distribution between devices during transient and steady state. This thesis deals with this issue and proposes a closed loop active gate driver circuit which can control rate of rise of drain-source voltage of SiC MOSFET during turn-off and turn-on interval without any significant penalty on switching losses.

Download or read book Characterization and Realization of High Switching speed Capability of SiC Power Devices in Voltage Source Converter written by Zheyu Zhang and published by . This book was released on 2015 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emerging wide band-gap, silicon carbide (SiC) power devices greatly improve the switching performance due to their inherent fast switching capability. However, the high switching-speed performance makes their switching behavior become more susceptible to parasitics of the application circuit. In the end, unlike the excellent switching performance of SiC devices tested in manufacturer' datasheets, the observed switching performance in actual power converters is almost always worse. This dissertation aims at characterization and realization of high switching-speed capability of SiC devices in one of the most widely used converter types, the voltage source converter (VSC). To evaluate the fast dynamic characteristics of SiC devices with high fidelity, a methodology of switching performance characterization is summarized. The assessed switching loss is highly sensitive to V−I timing alignment and cross-talk. A practical method is proposed to cope with these issues for accurate switching loss evaluation. Based on the methodology of switching performance characterization, limitations and impact factors of switching performance of SiC devices in VSC are explored. Cross-talk, turn-on overvoltage, and parasitics of inductive loads are identified as the "killer" impact factors. To suppress cross-talk, intelligent gate drivers are designed to be capable of tuning the gate voltage and gate resistance during different switching transients for both devices in a phase-leg. The spurious gate voltage induced by cross-talk can be limited, leading to the improved switching performance with fast switching speed and low switching losses. To mitigate the turn-on over-voltage and parasitic ringing, the placement of gate drivers, devices and power stage and layout design for SiC devices with TO package are proposed and implemented, enabling 30% power loop and common source inductance reduction. To decouple the interaction between devices and inductive load, a dedicated auxiliary filter is introduced to reshape the inductive load's high frequency impedance, allowing the switching behavior to become as excellent as that tested by the optimally-designed inductor. In the end, a SiC based three-phase VSC fed motor drives are built by using the knowledge and techniques developed above. It shows that switching behaviors in VSC have nearly identical performance as that characterized in the optimally-designed switching test circuit.

Download or read book Control of Power Electronic Converters and Systems Volume 4 written by Frede Blaabjerg and published by Academic Press. This book was released on 2024-02-24 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: Control of Power Electronic Converters and Systems, Volume Four covers emerging topics in the control of power electronics and converters not covered in previous volumes, including emerging power converter topologies, storage systems, battery chargers and the smart transformer. This updated edition specifically focuses on emerging power converter topologies and discusses very recent advances and topics with applications in power electronics and formidable probable dynamics. Chapters include modeling of power converters and their control, with supportive simulations and additional experimental results.Anyone looking for fundamental knowledge regarding new trends in power electronics by application, and also ready to use models and methodologies in their design, control and testing will find this the next invaluable resource in this highly regarded series. Combines essential control design methods and trends with different applications of power convertor topologies Includes global perspectives, case studies and real examples from different applications and their control Features ready-to-use models and methodologies in power electronic application, their design, control and testing

Download or read book Design Control and Application of Modular Multilevel Converters for HVDC Transmission Systems written by Kamran Sharifabadi and published by John Wiley & Sons. This book was released on 2016-08-22 with total page 415 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design, Control and Application of Modular Multilevel Converters for HVDC Transmission Systems is a comprehensive guide to semiconductor technologies applicable for MMC design, component sizing control, modulation, and application of the MMC technology for HVDC transmission. Separated into three distinct parts, the first offers an overview of MMC technology, including information on converter component sizing, Control and Communication, Protection and Fault Management, and Generic Modelling and Simulation. The second covers the applications of MMC in offshore WPP, including planning, technical and economic requirements and optimization options, fault management, dynamic and transient stability. Finally, the third chapter explores the applications of MMC in HVDC transmission and Multi Terminal configurations, including Supergrids. Key features: Unique coverage of the offshore application and optimization of MMC-HVDC schemes for the export of offshore wind energy to the mainland. Comprehensive explanation of MMC application in HVDC and MTDC transmission technology. Detailed description of MMC components, control and modulation, different modeling approaches, converter dynamics under steady-state and fault contingencies including application and housing of MMC in HVDC schemes for onshore and offshore. Analysis of DC fault detection and protection technologies, system studies required for the integration of HVDC terminals to offshore wind power plants, and commissioning procedures for onshore and offshore HVDC terminals. A set of self-explanatory simulation models for HVDC test cases is available to download from the companion website. This book provides essential reading for graduate students and researchers, as well as field engineers and professionals who require an in-depth understanding of MMC technology.

Download or read book Silicon Carbide DMOSFET Characterization and Evaluation for Power Electronics Applications written by Ronald Green and published by . This book was released on 2010 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: As SiC MOSFET technology continues to mature, an assessment of device reliability becomes essential for the development of large power modules utilizing this technology. This dissertation investigated state-of-the-art 4H-SiC DMOSFETs for continuous power electronics applications. The research methodology consisted of performing a variety of electrical measurements that characterized device performance, and studied device stability and reliability. A 400-A power module utilizing SiC MOSFET technology was fabricated, tested and implemented in a continuous power conversion application circuit. The module features an integrated heat sink design and form factor that is compliant to commercial IGBT modules with similar rating. Switch-mode testing of the module in a power converter circuit demonstrated operation at 25 kW and 30 kHz switching frequency with an ambient temperature of 80°C. On-state performance of 1200 V class SiC MOSFET devices is currently limited by charge trapping at the SiC-SiO2 interface. As a result, the channel mobility is very low (much ≈ 20 cm 2/V·s) and the total specific on-resistance (Ron-sp) is dominated by the channel resistance. The temperature dependence of R on-sp was shown to be a function of the applied gate voltage. Two separate scattering mechanisms are responsible for the difference in the temperature response of Ron-sp that occurs at low and high gate voltages. The threshold voltage (VT) of these devices has strong temperature dependence which can limit the blocking performance. Subthreshold leakage current through the MOS channel increases with increasing temperature due to the shift in VT. This results in a higher drain leakage current during the off-state as the device temperature is raised. Device reliability may be impacted if VT is not set high enough to preclude subthreshold leakage current during off-state operation. It has been demonstrated that application of a negative gate bias can suppress this leakage current and enhance off-state performance. Switching performance of 4H-SiC MOSFET devices was characterized as a function of temperature in a double-pulse clamped inductive load test circuit. The total switching energy loss was found to decrease with increasing temperature due to the shift in VT. Modified High Temperature Gate Bias (MHTGB) and High Temperature Reverse Bias (HTRB) measurements on SiC MOSFET devices have achieved stress times of 100 and 50 hours respectively, with no failures. This work provides a first look at the long-term reliability of these devices. -- Abstract.

Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Download or read book Modeling and Design of Paralleled SiC MOSFET for Multi chip Power Module written by Pengkun Liu and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) have seen rapid growth in recent years, thanks to its low conduction loss, fast switching speed, and good thermal conductivity. For high power applications, it is necessary to parallel two or more devices in order to achieve the desired current rating, conduction loss, and thermal performance. Traditional single-driver multi-chip module (SDM) requires strong drivers and suffers a lot from parasitic parameter mismatch induced transient current unbalance and intrinsic oscillation. To reduce the thermal imbalance and operation risks, the switching speeds of parallel MOSFETs or MOSFET modules in general are usually slowed with larger gate resistance, at the expense of higher switching loss. Therefore, this solution is not optimal since it indicates a poor utilization of the SiC MOSFET’s intrinsic high-speed capability. The research developed analytical models for the transient current sharing and inherent oscillation for two paralleled SiC MOSFETs’ switching process. The transient current sharing model is developed based on linearized circuit state equations, while the intrinsic oscillation model is based on small-signal equivalent circuits. By using these models, the influences of parasitic parameters are investigated. The optimized gate resistor selection to compensate circuit mismatches is discussed. Based on the studies and models, a 650 V, 300 A double-side cooling GaN HEMT based SDM is designed and fabricated. A better configuration of the multi-driver multi-chip module (MDM) is proposed and the performances are compared. The analytical models provide a fast way to evaluate and optimize the design or approach of any paralleled MOSFET cases. The proposed MDM solution could be a more efficient, more reliable power module design configuration. The parameter influence and comparison results were verified in the experimental tests

Download or read book High Speed Silicon Controlled Rectifier Static Transfer Switch written by Hossein Mokhtari and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents new fault/disturbance detection and thyristor-gating schemes for a Silicon Controlled Rectifier (SCR) Static Transfer Switch (STS) to achieve fast load-switching between two sources of ac power. STSs have been used in Uninterruptible Power Supply (UPS) systems. They have also attracted interests in medium-voltage applications for fast load-switching between two distribution feeders. However, the performance evaluation of the STSs from a detection/transfer time point of view has not been reported in the literature. In this thesis, a detailed analysis of both voltage-detection and transfer-and-gating logics is given under various operating conditions. The voltage-detection method results in a short detection time and is not susceptible to capacitor-switching voltage transients. The designed transfer-and-gating strategy can operate at different operating conditions while optimizing the transfer time. A detailed description of the power circuit and the control circuit of the STS is given. For the voltage-detection, analytical expressions are derived to estimate its response time to different faults/disturbances in the system. The principles of operation of the transfer-and-gating circuit are described, and it is shown that the gating logic can meet the thyristor-gating requirements. The performance of the STS is evaluated for RL loads and regenerative loads under some simplifying assumptions. A systematic design procedure is proposed for the design of the thyristor modules and the control circuit of the STS. An experimental set-up is also prepared to verify the performance of the designed detection and gating methods and the theoretical results derived in the thesis.

Download or read book Fast Short circuit Protection for SiC MOSFETs in Extreme Short circuit Conditions by Integrated Functions in CMOS ASIC Technology written by Yazan Barazi and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap power transistors such as SiC MOSFETs and HEMTs GaN push furthermore the classical compromises in power electronics. Briefly, significant gains have been demonstrated: better efficiency, coupled with an increase in power densities offered by the increase in switching frequency. HV SiC MOSFETs have specific features such as a low short-circuit SC withstand time capability compared to Si IGBTs and thinner gate oxide, and a high gate-to-source switching control voltage. The negative bias on the gate at the off-state creates additional stress which reduces the reliability of the SiC MOSFET. The high positive bias on the gate causes a large drain saturation current in the event of a SC. Thus, this technology gives rise to specific needs for ultrafast monitoring and protection. For this reason, the work of this thesis focuses on two studies to overcome these constraints, with the objective of reaching a good performance compromise between “CMS/ASIC-CMOS technological integration level-speed-robustness”. The first one, gathers a set of new solutions allowing a detection of the SC on the switching cycle, based on a conventional switch control architecture with two voltage levels. The second study is more exploratory and is based on a new gate-driver architecture, called multi-level, with low stress level for the SiC MOSFET while maintaining dynamic performances. The manuscript covers firstly the SiC MOSFET environment, (characterization and properties of SC behavior by simulation using PLECS and LTSpice software) and covers secondly a bibliographical study on the Gate drivers. And last, an in-depth study was carried out on SC type I & II (hard switch fault) (Fault under Load) and their respective detection circuits. A test bench, previously carried out in the laboratory, was used to complete and validate the analysis-simulation study and to prepare test stimuli for the design stage of new solutions. Inspired by the Gate charge method that appeared for Si IGBTs and evoked for SiC MOSFETs, this method has therefore been the subject of design, dimensioning and prototyping work, as a reference. This reference allows an HSF type detection in less than 200ns under 400V with 1.2kV components ranging from 80 to 120mOhm. Regarding new rapid and integrated detection methods, the work of this thesis focuses particularly on the design of a CMOS ASIC circuit. For this, the design of an adapted gate driver is essential. An ASIC is designed in X-Fab XT-0.18 SOICMOS technology under Cadence, and then packaged and assembled on a PCB. The PCB is designed for test needs and adaptable to the main bench. The design of the gate driver considered many functions (SC detection, SSD, segmented buffer, an "AMC", ...). From the SC detection point of view, the new integrated monitoring functions concern the VGS time derivative method which is based on a detection by an RC analog shunt circuit on the plateau sequence with two approaches: the first approach is based on a dip detection, i.e. the presence or not of the Miller plateau. The second approach is based on slope detection, i.e. the variability of the input capacitance of the power transistor under SC-HSF compared to normal operation. These methods are compared in the third chapter of the thesis, and demonstrate fault detection times between 40ns and 80ns, and preliminary robustness studies and critical cases are presented. A second new method is partially integrated in the ASIC, was designed. This method is not developed in the manuscript for valorization purposes. In addition to the main study, an exploratory study has focused on a modular architecture for close control at several bias voltage levels taking advantage of SOI isolation and low voltage CMOS transistors to drive SiC MOSFETs and improve their reliability through active and dynamic multi-level selection of switching sequences and on/off states.

Download or read book Design and Application of SiC Power MOSFET written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional(2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to good agreement with the experimental transfer characteristic. The results demonstrate that both MEDICI and SPICE simulators can be used for design and optimization of 4H SiC MOSFETs and the circuits utilizing these MOSFETs. Based on critical review of SiC power MOSFETs, a new structure of SiC accumulation-mode MOSFET(ACCUFET) designed to address most of the open issues related to MOS interface is proposed. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI with the parameter set used in the calibration process. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit for power devices. The analysis of circuit advantages enabled by the novel SiC ACCUFET is given in the final part of this thesis. The results from circuit simulation show that by utilizing the novel SiC ACCUFET the operating frequency of the circuit can be increased 10 times for the same power efficiency of the system. This leads to dramatic improvements in size, weight, cost and thermal management of power electronic systems.

Download or read book Improving Switching Performance of Power MOSFETs Used in High Rep Rate Short Pulse High Power Pulsers written by E. G. Cook and published by . This book was released on 2006 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: As their switching and power handling characteristics improve, solid-state devices are finding new applications in pulsed power. This is particularly true of applications that require fast trains of short duration pulses. High voltage (600-1200V) MOSFETs are especially well suited for use in these systems, as they can switch at significant peak power levels and are easily gated on and off very quickly. MOSFET operation at the shortest pulse durations is not constrained by the intrinsic capabilities of the MOSFET, but rather by the capabilities of the gate drive circuit and the system physical layout. This project sought to improve MOSFET operation in a pulsed power context by addressing these issues. The primary goal of this project is to improve the switching performance of power MOSFETs for use in high rep-rate, short pulse, high-power applications by improving the design of the gate drive circuits and the circuit layouts used in these systems. This requires evaluation of new commercial gate drive circuits and upgrading the designs of LLNL-developed circuits. In addition, these circuits must be tested with the fastest available high-voltage power MOSFETs.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.