Download or read book Design and Simulation of Strained Si strained SiGe Dual Channel Hetero structure MOSFETs written by Puneet Goyal and published by . This book was released on 2007 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: "With a unified physics-based model linking MOSFET performance to carrier mobility and drive current, it is shown that nearly continuous carrier mobility increase has been achieved by introduction of process-induced and global-induced strain, which has been responsible for increase in device performance commensurately with scaling. Strained silicon-germanium technology is a hot research area, explored by many different research groups for present and future CMOS technology, due to its high hole mobility and easy process integration with silicon. Several heterostructure architectures for strained Si/SiGe have been shown in the literature. A dual channel heterostructure consisting of strained Si/Si1-xGex on a relaxed SiGe buffer provides a platform for fabricating MOS transistors with high drive currents, resulting from high carrier mobility and carrier velocity, due to presence of compressively strained silicon germanium layer. This works reports the design, modeling and simulation of NMOS and PMOS transistors with a tensile strained Si channel layer and compressively strained SiGe channel layer for a 65 nm logic technology node. Since most of the recent work on development of strained Si/SiGe has been experimental in nature, developments of compact models are necessary to predict the device behavior. A unified modeling approach consisting of different physics-based models has been formulated in this work and their ability to predict the device behavior has been investigated. In addition to this, quantum mechanical simulations were performed in order to investigate and model the device behavior. High p/n-channel drive currents of 0.43 and 0.98 mA/Gm, respectively, are reported in this work. However with improved performance, ~ 10% electrostatic degradation was observed in PMOS due to buried channel device"--Abstract.

Download or read book Strained Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

Download or read book Modelling and Simulation of Si SiGe Heterostructure Devices written by Norulhuda Abd Rasheid and published by . This book was released on 2002 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Complemetary metal-oxide-semiconductor (CMOS) is currently the most dominant technology used in making integrated systems. It consists of both n-channel MOS transistor (NMOS) and p-channel MOS transistor (PMOS) fabricated on the same substrate. Conventionally, the substrate is made of silicon. Alternatively, the substrate can be made from different layer of semiconductors known as heterostructure. Much attention has been given to Si/SiGe due to its compatibility with silicon and the higher carrier mobilities. SiGe is an alloy which is said to be an alternative solution to the problem of a down-scaled CMOS to produce high speed device. This work consists of modeling three different of Si/SiGe heterostructure substrates which are used to construct n- and p-channel MOSFETs and later to construct CMOS inverter. The three types of heterostructures are a strained SiGe on silicon substrate, a strained silicon on relaxed SiGe/Si substrate and a strained SiGe on strained Si/relaxed layers of SiGe/Si substrate. A device simulator, Avanti MEDICI Version 1999.2 is used in this project. Although it has heterojunction capability, it does not support model for a strained Si. This work also highlights the method to simulate Si/SiGe heterostructures containing strained layer using MEDICI. Simulations on the band structure and current-voltage (I-V) characteristics of the MOSFETs are carried out. The Id-Vg and Id-Vd are simulated for different value of Ge% and mobility. This is to observe the effect of varying the value of Ge% and mobility used in the design. The simulation on the CMOS inverter as the fundamental circuit is carried out to obtain the transfer curve. The noise margin and switching characteristics can be extracted from the transfer curve. All the simulated results are then compared with the Si bulk, the analyses show that the performance of the Si/SiGe heterostructures is better in terms of the electrical characteristics of the MOSFETs and the switching characteristics of the CMOS inverter, as compared to the performance of the Si bulk.

Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Download or read book Strained SiGe channel P MOSFETs written by Cáit Ní Chléirigh and published by . This book was released on 2007 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: Conventional Si CMOS intrinsic device performance has improved by 17% per year over the last 30 years through scaling of the gate length of the MOSFET along with process innovations such as the super-steep retrograde channel doping and ultra shallow source-drain junctions. In order to continue performance scaling with gate length for the 90 nm node and beyond (physical gate length 45 nm) an increase in the carrier mobility through the introduction of strain to the Si channel was required. To continue this scaling down to gate lengths of 10 nm new channel materials with superior mobility will be required. Superior hole mobility (up to 10X enhancement over bulk Si channels) and compatibility with mainstream Si processing technology make compressively strained SiGe an attractive channel material for sub 45 nm p-MOSFETs. This research investigates strained SiGe as a suitable channel material for p-MOSFETs using SiGe grown pseudomorphically on both relaxed SiGe and bulk Si substrates. Some of the fundamental and technological challenges that must be faced in order to incorporate SiGe channel materials are addressed, including the impact of heterostructure composition and SiGe channel thickness on mobility and MOSFET off-state leakage, as well as critical thickness and thermal budget constraints. In particular, the impact of the strained channel thickness on mobility is analyzed in detail. This work provides a detailed analysis of the design space for the SiGe heterostructure required to evaluate the trade off's between mobility enhancement, subthreshold characteristics and ease of integration with conventional CMOS processing in order to determine the optimum device structure.

Download or read book High Mobility Strained Si SiGe Heterostructure MOSFETs written by Christopher W. Leitz and published by . This book was released on 2002 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) Record mobility strained Si p-MOSFETs have been fabricated on relaxed 40% Ge virtual substrates. Hole mobility enhancements saturate at virtual substrate compositions of 40% Ge and above, with mobility enhancements over twice that of co-processed bulk Si devices. In contrast, hole mobility in strained Si p-MOSFETs displays no strong dependence on strained layer thickness. These results indicate that strain is the primary variable in determining hole mobility in strained Si p-MOSFETs and that symmetric electron and hole mobility enhancements in strained Si MOSFETs can be obtained for virtual substrate compositions beyond 35% Ge. The effect of alloy scattering on carrier mobility in tensile strained SiGe surface channel MOSFETs is measured directly for the first time. Electron mobility is degraded much more severely than hole mobility in these heterostructures, in agreement with theoretical predictions. Dual channel heterostructures, which consist of the combination of buried compressively strained SiilyGey buried channels and tensile strained Si surface channels, grown on relaxed SilxGex virtual substrates, are explored in detail for the first time. Hole mobilities exceeding 700 cm2/V-s have been achieved by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates. This layer sequence exhibits nearly symmetric electron and hole mobilities, both enhanced relative to bulk Si ...

Download or read book Strain Induced Effects in Advanced MOSFETs written by Viktor Sverdlov and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Download or read book Introducing Technology Computer Aided Design TCAD written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Download or read book Analytical Design and Numerical Verification of P Channel Strained Silicon Germanium Hetero MOSFET written by and published by . This book was released on 2008 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACTSilicon Germanium (Si1-xGex) is an alloy semiconductor that has caught considerable attention of the semiconductor industry in the past decade. Effects of strain in thin films are the reason for this. Strain leads to considerable deformation of bands providing enhanced mobility for both electrons and holes. Another important aspect of SiGe is the reduction of band gap. This makes band gap engineering feasible in all silicon technology. Yet another attractive point is the adaptability and compatibility of SiGe to silicon process technology. In CMOS circuits the p-channel MOSFET needs more than double the area of the n-channel MOSFET due to the lower mobility of holes in silicon. Hence a p-channel hetero MOSFET (HMOSFET) is chosen as the object of this dissertation. A simple general device structure that can provide considerable enhancement in performance, compared to a conventional MOSFET, is selected. A one dimensional Poisson equation is solved for this hetero junction device. Using these results an Excel spreadsheet is used as a tool to design a complete analytical program that can provide internal as well as terminal parameters of this device. The analytical program is tested by comparing the results with ISE-TCAD numerical device simulator results. The results were found to match very well. This analytical program yields results in a fraction of the time compared to numerical programs. For the device of choice variable parameters are identified. It is found that these parameters are interconnected in many ways and trade offs between them need to be applied. From the front end of the spreadsheet input parameters can be varied and parameters like potentials, hole density and terminal characteristics can be plotted very easily while simultaneously computing other parameters like threshold voltage and saturation current. The main contribution of this dissertation research is(1) Development of a very efficient and accurate analytical program to interactively design and optimize a p-channel HMOSFET(2) A detailed understanding and explanation of various design parameters, their implications, interdependency and trade offs(3) Study and explanation of certain special characteristics ofp-HMOSFET like dual threshold voltage, low off-currents, structural limitations etc.

Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.

Download or read book Proceedings of the International Conference on Microelectronics Computing Communication Systems written by Vijay Nath and published by Springer. This book was released on 2017-12-29 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics, Computer, Communication and Information Technology and their applications in business, academic, industry and other allied areas. The main aim of this volume is to bring together content from international scientists, researchers, engineers from both academia and the industry. The contents of this volume will prove useful to researchers, professionals, and students alike.

Download or read book Computational Electronics written by Dragica Vasileska and published by CRC Press. This book was released on 2017-12-19 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Download or read book Transport in Thin body MOSFETs Fabricated in Strained Si and Strained Si SiGe Heterostructures on Insulator written by Ingvar Åberg and published by . This book was released on 2006 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) Comparisons between SSDOI of two strain levels indicate benefits of strain engineering down to 3 nm thickness. The hole mobility in HOI is improved compared to that in SSDOI, due to the high hole mobility in the Si1-zGez channel. The mobility enhancement is similar at low and high hole densities even at moderate strain levels. The hole mobility in HOI with SiGe channel thickness below 10 nm is observed to follow a similar dependence on channel thickness as hole mobility in SSDOI. Simulations of electrostatics in HOI and SSDOI with ultra-thin channel thicknesses indicate similarities in the confinement of the inversion charge in ultra-thin body HOI and SSDOI. This suggests that the similar reduction of hole mobility in HOI and SSDOI with 4-10 nm-thick channels is associated with an increase in phonon scattering from the reduced effective channel thickness.

Download or read book Technology for SiGe Heterostructure based CMOS Devices written by Mark Albert Armstrong and published by . This book was released on 1999 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bulk silicon is currently the substrate material of choice for the manufacture of high performance digital circuits due to its highly-developed processing technology and the relatively low cost for high-quality substrates. Silicon-based MOSFETs have reached remarkable levels of performance through device scaling. However, with each technology generation, it is becoming harder and harder to improve device performance at the same pace through traditional scaling methods alone. Short-channel effects such as velocity saturation and drain-induced barrier lowering have placed an fundamental limit on the ultimate performance of bulk Si MOSFETS. One way to raise this limit is to increase the carrier mobilities in the channel. This can be done using high-mobility Si and SiGe strained-layers. Unlike III-V-based high-mobility materials, Si/SiGe strained-layers have the advantage of being largely compatible with mainstream Si processing, which is important from a financial feasibility standpoint. This thesis examines several issues related to Si/SiGe strained-layer devices and their integration into mainstream CMOS. The first part of this work strives to predict the performance leverage of high-mobility Si/ SiGe over bulk Si devices and circuits in a realistic manner. Two-dimensional hydrodynamic simulations are used to predict static device characteristics including effects of series resistance, velocity saturation and velocity overshoot. The simulations show enhanced current drive over bulk Si devices at 0.2 [mu]m effective channel length and highlight the importance of velocity overshoot in high-mobility submicron devices. The circuit performance of Si/SiGe devices is determined from transient simulations of CMOS ring oscillators including the effects of parasitic capacitance and drain-to-source voltage at the onset of saturation Vds.sat. The simulations show a 4 to 6-fold reduction in power-delay product as compared to bulk CMOS oscillators operated at 2.5 V with the same design rules. The remainder of the thesis focuses on the fabrication and characterization of strained-Si NMOS devices. The vehicle for this work is a novel short-flow, single-mask MOSFET which can be fabbed in as little as a week. This device is superior to simple Hall mobility structures which suffer from leakage through the substrate, an inability to control the. carrier concentration and the uncertainty associated with the Hall scattering factor. I investigate a novel buried-channel strained-Si NMOS structure incorporating an n-type donor layer beneath the strained-Si channel to encourage occupation of the buried channel and increase the overall mobility. Peak mobility in a structure without a donor layer reproduces the best results in the literature for buried-channel strained-Si NMOS devices. For structures with donor layers, Coulomb scattering from charges in the donor layer eradicates any benefit from increased buried-channel occupation. I also investigate the effect of well implants on the mobility of surface . channel strained-Si NMOS devices. Similar to the universal mobility curve in bulk Si, mobility at low perpendicular electric field degrades with increasing implant dose while high field mobility is unaffected. The mobility is largely unaffected by a neutral implant species at the same dose. This leads to the conclusion that the material quality of the strained-layer is not affected by the implant, and that the mobility degradation is due solely to increased ionized impurity scattering.

Download or read book Numerical Simulation of Sub 100 Nm Strained Si SiGe MOSFETs for RF and CMOS Applications written by Lianfeng Yang and published by . This book was released on 2004 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt: