Download or read book Design and Simulation of Silicon Germanium Heterodimensional Field Effect Transistors written by Tongwei Cheng and published by . This book was released on 2004 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work concentrates on the side gating action in a silicon-germanium hetero-dimensional field effect transistor (HDFET) structure, a four terminal device. The spreading of the depletion regions between the side gates and the quantum well is investigated within this thesis for a silicon germanium system. The linear relationship between the depletion width and reverse bias voltage in a 2D-3D junction is revealed, similar to results found for III-V technologies. The possibility of reducing the dimensionality of the 2DHG down to a quantum wire is demonstrated. The study shows that appropriate bias condition applied to the side gates can be used to position the charge carriers within the plane of the quantum well. Extensive investigations have been made by considering the silicon-germanium system and the effect of substrate doping on the depletion width spreading. Device simulation technologies have the capability to provide a fast, cost effective and accurate means of charactering silicon-germanium HDFET performance. Non-default material parameters for silicon-germanium were introduced into the simulation tool. However, the accuracy of these silicon-germanium parameters is dependent on knowledge of applicability, the physical models and the validity of reasonable parameter selection (and common modeling assumptions). It is achieved through validation of simulated results against accurate measurements. The models used in this thesis are based on a physical understanding of modern HDFET devices. They contain all of the main physical effects and common modeling assumptions including quantum effects and an appropriately modified drift diffusion model for heterostructure simulation. Applications of side gating including switching and logic demonstrate that multi-valued logic gates are possible. More versatile designs are easily made for different HDFET structures and allow for unique electronic and geometric properties such as high conductance, small capacitance, high breakdown voltage, superior electron or hole confinement and elimination of short channel effect (SCE) and drain induced band lowing (DIBL). The results of this work reveal these advantages can be achieved in silicon-germanium technologies, thus opening the way for the integration of these devices into conventional CMOS processes.
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Silicon Germanium written by Raminderpal Singh and published by Wiley-IEEE Press. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book High Mobility and Quantum Well Transistors written by Geert Hellings and published by Springer Science & Business Media. This book was released on 2013-03-25 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by . This book was released on 2018 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Design Fabrication Characterization and Modeling of Novel Ultra Low Power Heterodimensional Field Effect Transistors written by Michael J. Hurt and published by . This book was released on 1998 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Performance Germanium Nanowire Field effect Transistors and Tunneling Field effect Transistors written by Junghyo Nah and published by . This book was released on 2010 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling of metal-oxide-semiconductor (MOS) field-effect transistors (FETs) has continued for over four decades, providing device performance gains and considerable economic benefits. However, continuing this scaling trend is being impeded by the increase in dissipated power. Considering the exponential increase of the number of transistors per unit area in high speed processors, the power dissipation has now become the major challenge for device scaling, and has led to tremendous research activity to mitigate this issue, and thereby extend device scaling limits. In such efforts, non-planar device structures, high mobility channel materials, and devices operating under different physics have been extensively investigated. Non-planar device geometries reduce short-channel effects by enhancing the electrostatic control over the channel. The devices using high mobility channel materials such as germanium (Ge), SiGe, and III-V can outperform Si MOSFETs in terms of switching speed. Tunneling field-effect transistors use interband tunneling of carriers rather than thermal emission, and can potentially realize low power devices by achieving subthreshold swings below the thermal limit of 60 mV/dec at room temperature. In this work, we examine two device options which can potentially provide high switching speed combined with reduced power, namely germanium nanowire (NW) field-effect transistors (FETs) and tunneling field-effect transistors (TFETs). The devices use germanium (Ge) -- silicon-germanium (Si[subscript x]Ge[subscript 1-x]) core-shell nanowires (NWs) as channel material for the realization of the devices, synthesized using a 'bottom-up' growth process. The device design and material choice are motivated by enhanced electrostatic control in the cylindrical geometry, high hole mobility, and lower bandgap by comparison to Si. We employ low energy ion implantation of boron and phosphorous to realize highly doped contact regions, which in turn provide efficient carrier injection. Our Ge-Si[subscript x]Ge[subscript 1-x] core-shell NW FETs and NW TFETs were fabricated using a conventional CMOS process and their electrical properties were systematically characterized. In addition, TCAD (Technology computer-aided design) simulation is also employed for the analysis of the devices.
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2005 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium Technology Modeling and Design written by Raminderpal Singh and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications."--Ron Wilson, EETimes"SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it."-Alberto Sangiovanni-VincentelliProfessor, University of California, BerkeleyCofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to:*Detail many of IBM's SiGe technology development programs*Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling*Discuss IBM's design automation and signal integrity knowledge and implementation methodologies*Illustrate design applications in a variety of IBM's SiGe technologies*Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) designWritten for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development."-Ron WilsonSilicon Engineering Editor, EETimes"This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods."-John KellySenior Vice President and Group Executive, Technology Group, IBM
Download or read book Fabrication Characterization and Simulation of Band to band Tunneling Field effect Transistors Based on Silicon Germanium written by Matthias Schmidt and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GAA Silicon Nanowire Field Effect Transistor A Compact Model written by Mayank Chakraverty and published by . This book was released on 2014-09-12 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon silicon germanium Modulation doped Field effect Transistors for Complementary Circuit Application written by Mohamed A. Arafa and published by . This book was released on 1997 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation Based Performance Investigation of Germanium Planar Fin type Field Effect Transistor with Strain Engineering and Stress Regulation Structure Design written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
