Download or read book Design and Performance of Modulation doped Field Effect Transistors written by Steven Lawrence Yellen and published by . This book was released on 1986 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Principles and Performance of Modulation doped Field Effect Transistors for Low Noise Microwave Amplification written by Lovell H. Camnitz and published by . This book was released on 1986 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of Modulation doped Field effect Transistors written by Hyunchang Park and published by . This book was released on 1989 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Performance Characteristics of a Short channel N AlGaAs InGaAs GaAs Modulation doped Field Effect Transistor written by San Gao and published by . This book was released on 1989 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Performance of Aluminum Gallium Arsenide gallium Arsenide Modulation doped Field effect Transistors for High speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study and Analysis of AlGaAs GaAs Modulation Doped Field Effect Transistors Incorporating P Type Schottky Gate Barriers written by Kevin L. Priddy and published by . This book was released on 1985 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design and dc performance of enhanced Schottky barrier modulation doped transistors (ESMODFETs) is presented. The theory required to estimate the layer thicknesses and dopings required for a desired barrier height is developed. The experimental results show and increase from 0.8eV to 1.6eV for the ESMODFET versus the standard MODFET, with good correlation between theory and experiment. The ohmic contact resistance of the ESMODFET is comparable to that of the MODFET. The process used to fabricate the ESMODFET is similar to that used for the MODFET. (Theses).
Download or read book Principles and Technology of MODFETs written by Hadis Morko? and published by Wiley. This book was released on 1991-07-09 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: An acknowledged world authority on modulation doped field effect transistors (MODFETS) offers a detailed comparison of MODFETS performance--both as microwave and digital devices--with other structures. Concentrates on basic aspects of design and measurement in electronic engineering. Introductory material on heterojunction and semiconductor physics include crystalline structures, dynamics of interfaces, carrier densities, band discontinuities plus the treatment of stress and strain and their effect on the band structures.
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.
Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Power Management Integrated Circuits written by Mona M. Hella and published by CRC Press. This book was released on 2017-12-19 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Management Integrated Circuits and Technologies delivers a modern treatise on mixed-signal integrated circuit design for power management. Comprised of chapters authored by leading researchers from industry and academia, this definitive text: Describes circuit- and architectural-level innovations that meet advanced power and speed capabilities Explores hybrid inductive-capacitive converters for wide-range dynamic voltage scaling Presents innovative control techniques for single inductor dual output (SIDO) and single inductor multiple output (SIMO) converters Discusses cutting-edge design techniques including switching converters for analog/RF loads Compares the use of GaAs pHEMTs to CMOS devices for efficient high-frequency switching converters Thus, Power Management Integrated Circuits and Technologies provides comprehensive, state-of-the-art coverage of this exciting and emerging field of engineering.
Download or read book Examination of Millimeter Wave Performance Potential of Modulation Doped AlGaAs GaAs FET Structures written by Mukunda B. Das and published by . This book was released on 1985 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: This investigation involved a critical examination of the millimeter-wave performance requirements of the modulation-doped n-AlGaAs/GaAs FET structures. The results of this study revealed the need for a high aspect ration design for the gate structure of MODFET's for millimeter-wave performance. A detailed design procedure has also been developed for submicron gate-length MODFET's, determination of carrier saturation velocity, and power gain and noise figure performance of MODFET's. Keywords include: Field effect transistors; FETS; Modulation Doped FETS; MODFETS; Metal Semiconductor FETS; and MESFETS.
Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2018-10-03 with total page 2320 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.
Download or read book Modulation Doped Field Effect Transistors in Strained Layer Superlattices written by S. M. Bedair and published by . This book was released on 1986 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the mm-wave device investigation the limitations imposed by parasitic elements upon high-frequency performance were investigated. It was determined that the high field domain that forms in the channel of field-effect type transistors presents a limitation to high frequency operation. The domain capacitance creates a complex pole in the unilateral gain that results in a 12 db/octave roll-off above the resonant frequency of the pole. The various factors that effect this pole have been investigated. Current FETs are limited to upper operation frequencies of about 150-160 GHz. The GaAs(1-y)P(y)-Ga(1-yInx)As material system is proposed for potential HEMT applications. This structure is made of strained layers that can be grown with y = 2x free from dislocations, and lattice matched to a GaAs substrate. HEMT devices fabricated in such structure have several potential advantages over the conventional AlGaAs-GaAs HEMT. First, the active layer is Ga(1-x)In(x)As instead of GaAs. Thus, the potential exists for higher room temperature mobilities with larger saturation velocities and a larger conduction band edge discontinuity. An advantage over the Ga(0.47)In(0.53)As-InP system is that the composition of the Ga(1-x)In(x)As in the proposed structure can be varied to optimize the HEMT performance, whereas the Ga(0.47)In(0.53)As has a fairly low bandgap for optimum FET devices.
Download or read book Noise in Modulation doped Field effect Transistors written by Kuo-Wei Liu and published by . This book was released on 1994 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
