Download or read book Design and Fabrication of High Voltage 4H SiC Schottky Barrier Diodes written by Luo, Xixi and published by . This book was released on 2019 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel design of mesa-etch termination and Superjunction JBS diode structure has been proposed and optimized. The new mesa-etch termination can achieve over 90% of ideal maximal breakdown voltage within a wide sidewall implant dose window (~9e16 cm−3). Besides the high tolerance on implant dose, the proposed design also exhibits high tolerance on the etch sidewall angle: minimal maximum breakdown voltage was observed with etch sidewall angle variations. The Superjunction JBS diode can obtain both 96.4% maximum super junction breakdown voltage and 76.6% JBS Schottky surface electric field reduction. The super junction maximal breakdown voltage is 1.5 times large as the conventional Schottky diode breakdown voltage and the leakage current is logarithmically related to the surface electric field. The superior breakdown voltage represents a large improvement on the power rectifier performance. Based on these structure improvements, vertical 4H-SiC Schottky Diodes have been fabricated and tested. Vertical 4H-SiC Schottky Diode without any edge termination has a breakdown voltage as large as 692 V and exhibits an on-state specific resistance as small as 7.9 mΩ*cm2. Such breakdown voltage is much higher than simulation results. In the meantime, on-state resistance is also much larger than the simulation results. The mechanism for these improved power rectifier performances will be furthered investigated in future studies

Download or read book Design Fabrication and Characterization of High Voltage 10 KV 4H SiC MPS Diodes written by Yifan Jiang and published by . This book was released on 2019 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of 4H SiC High Voltage Devices written by Woongje Sung and published by . This book was released on 2011 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Fabrication and Characterisation of 4H SiC Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Download or read book Design and Fabrication of Schottky Barrier Diodes on SIC written by Vivek Saxena and published by . This book was released on 1998 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Download or read book The Fabrication and Characterisation of 4H silicon Carbide Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2018-10-03 with total page 2320 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

Download or read book Design and Fabrication of 4H Silicon Carbide Gate Turn off Thyristors written by Lei Lin and published by . This book was released on 2013 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Recent Developments in Electrical and Electronics Engineering written by Poonam Singhal and published by Springer Nature. This book was released on 2023-04-28 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains cutting-edge research content presented by researchers, engineers, developers, and practitioners from academia and industry at the International Conference on Recent Developments in Electrical and Electronics Engineering (ICRDEEE 2022). The materials in the book include theory and applications for different areas of Electrical and Electronics Engineering. The topics covered include power systems and protection, energy, electric vehicles, smart grid, semiconductor technologies, electrical machines and drives, control systems with artificial intelligence, etc. The content is useful for researchers, professionals, and academicians in understanding current research trends, findings, and future scope of research in electrical and electronics engineering models.

Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Download or read book A Monolithically Integrated Power JFET and Junction Barrier Schottky Diode in 4H Silicon Carbide written by Rahul Radhakrishnan and published by . This book was released on 2012 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficiency of power management circuits depends significantly on their constituent switches and rectifiers. The demands of technology are increasingly running up against the intrinsic properties of Si based power devices. 4H-Silicon Carbide (SiC) has superior properties that make it attractive for high power applications. SiC rectifiers are already a competitive choice and SiC switches have also been commercialized recently. Junction Barrier Schottky (JBS) diodes, which combine the advantages of PN and Schottky, have higher Figure of Merit (FOM) as rectifiers. Among switches, a robust and mature process has been developed for Silicon Carbide Vertical Junction Field Effect Transistors (VJFETs), which currently gives it the highest unipolar FOM. Switches are frequently combined with anti-parallel diodes in power circuits. This thesis describes the development of a SiC-based monolithically integrated power switch and diode. Monolithic integration increases reliability and efficiency, and reduces cost. Because of their superior properties and similarities in fabrication, we chose the SiC VJFET and JBS diode as the switch and rectifier. Detailed design, fabrication and characterization of the integrated switch to block above 800 V and conduct current beyond 100 A/cm2 is explained. In this process, the first physics-based 2-D compact model is developed for reverse leakage in a JBS diode as a function of design parameters. Since the gate-channel junctions of SiC VJFETs cannot be assumed to be abrupt, an existing analytical model for Si VJFETs is extended to account for graded gate-channel junctions. Using these analytical models, design rules are developed for the VJFET and JBS diode. Finite element simulations are used to find the best anode layout of the JBS diode and optimize electric field termination in the integrated device to ensure their capability to operate at high voltage. Finally, a spin-on glass based process is developed for filling the gate trenches of the VJFET to improve long-term robustness in extreme environments. The integrated power switch developed in this thesis points to the attractions of monolithic integration in SiC power circuits. Analytical compact design equations derived here will facilitate faster and easier design of switches and rectifiers for desired circuit operation.

Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2023-09-27 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles. This handbook is aimed at practitioners and researchers undertaking projects requiring specialist design, analysis, installation, commissioning, and maintenance services. - Provides a fully comprehensive work addressing each aspect of power electronics in painstaking depth - Delivers a methodical technical presentation in over 1500 pages - Includes 50+ contributions prepared by leading experts - Offers practical support and guidance with detailed examples and applications for lab and field experimentation - Includes new technical sections on smart-grid security and intelligent energy, artificial intelligence, and machine learning applications applied to power electronics and autonomous and electric vehicles - Features new chapter level templates and a narrative progression to facilitate understanding