Download or read book Defects in Ion Implanted Silicon Carbide written by and published by . This book was released on 2004 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects that introduce electrically active deep levels in ion-implanted Silicon Carbide (SiC) were studied by performing capacitance Deep- Level Transient- Spectroscopy (DLTS) and transconductance frequency dispersion measurements on fully implanted MESFETs in bulk semi-insulating 4-H SiC, MISFETs in 6-H SiC and double implanted p-n and n-p junction diodes in 4-H SiC. The junction diodes made with aluminum and phosphoms implantations exhibited higher reverse leakage current compared to those made by nitrogen and boron implantations. In all samples implanted with nitrogen a defect complex involving nitrogen and a point defect (introduced by the ion-implantation process) is observed with a trap level introduced at 0.51 eV above the valence band. Phosphoms implant-native defect related peaks are observed at 0.6 and 0.7 eV above the valence band. In all boron implanted samples, a prominent electrically active boron related D-center defect is seen at 0.62 eV above the valence band. In aluminum implanted samples an intrinsic vacancy related defect is seen at 0.78 eV above the valence band. Surface state related defects were observed in the N-implanted channel region at energies 0.18 eV, 0.3 eV and 0.4 eV. Several defects were observed in the gate insulator and insulator/channel interface.

Download or read book Point Defects in Ion implanted Silicon and Silicon Carbide written by Paolo Pellegrino and published by . This book was released on 2001 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Download or read book A Study of Implantation and Irradiation Induced Deep Level Defects in 6h Sic written by Min Gong and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "A Study of Implantation and Irradiation Induced Deep-level Defects in 6H-SiC" by Min, Gong, 龔敏, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123849 Subjects: Ion implantation Electron beams Irradiation Silicon carbide

Download or read book Electrical and Optical Characterization of Intrinsic and Ion Implantation Induced Defects in 6H And 4H SiC written by Michael B. Scott and published by . This book was released on 1999-11-01 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 deg C) ion- implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H- SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 degrees C. Trap parameters 0 both damage-related and species-related defects are determined by curve-fitting of DLTS rate window plots, including the identification of a 615 meV silicon-vacancy-substitutional-nitrogen defect. Double-correlated DLTS measurements indicate a one-dimensional distribution of various defects along the implantation axis and slight surface diffusion of ion-implanted magnesium during high-temperature annealing. Current-voltage-temperature measurements of 6H-SiC:Mg :Cr indicate the effect of annealing temperature and ion species on the concentration of near midgap defects. Optimum anneal temperatures are determined for activation of ion-implanted nitrogen and phosphorus. CL measurements indicate the formation of deep radiative centers in 500 degrees C ion-implanted 4H-SiC:P and :N. CL measurements also indicate the presence of a 130 meV higher energy level conduction band minimum.

Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Download or read book Defects in Ion Implanted Silicon Investigated by Transmission Electron Microscopy written by Kevin Scott Jones and published by . This book was released on 1987 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Download or read book Ion Implantation Phenomena in 4th silicon Carbide written by Gordon James Phelps and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Damage Accumulation and Recovery in Xe Implanted 4H SiC written by Chennan Jiang and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is a material that can be considered as a wide band gap semiconductor or as a ceramic according to its applications in microelectronics and in nuclear energy system (fission and fusion). In both fields of application defects or damage induced by ion implantation/ irradiation (doping, material structure) should be controlled. This work is a study of defects induced by noble gas implantation according to the implantation conditions (fluence and temperature). The elastic strain buildup, particularly in the case of xenon implantation, has been studied at elevated temperatures for which the dynamic recombination prevents the amorphization transition. A phenomenological model based on cascade recovery has been proposed to understand the strain evolution with increasing dose and for different noble gases. In addition, with the help of transmission electron microscopy the evolution of defects under subsequent annealing was studied. The formation of nanocavities was observed under severe implantation/annealing conditions. These cavities are of different nature (full of gas or empty) according to the xenon and damage distribution. This study is also linked to swelling properties under irradiation that should be projected in the SiC application fields.

Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Download or read book Plasticity of Silicon Carbide Doped by Ion Implantation written by S. M. Fenwick and published by . This book was released on 1988 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1979 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Processes Advances in Research and Application 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 957 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Processes—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Chemical Processes—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Chemical Processes—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt: