Download or read book Defective states in semi insulating gallium arsenide substrates written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integrated circuits. However, the performance of the above devices may be significantly affected by the substrate quality, i.e. crystal defects and related deep levels. Consequently, a careful characterization of substrates is mandatory to improve both device performance and production yields. In this work we have investigated gallium arsenide substrates from different suppliers and/or differently processed. To these substrates we have applied, discussed and compared different methodologies (current-voltage and capacitance-voltage characteristics as well as spectroscopic methods) to characterize the many deep levels which are either present in as-received semi-insulating substrates or induced by device processing such as ion implantation and the subsequent thermal annealing.
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Download or read book D X Centres and other Metastable Defects in Semiconductors Proceedings of the INT Symposium Mauterndorf Austria 18 22 February 1991 written by W. Jantsch and published by CRC Press. This book was released on 2020-11-26 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Download or read book Growth of Crystals written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.
Download or read book Basic Properties of III V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Download or read book Gallium Arsenide And Related Compounds Proceedings Of The 3rd International Workshop written by Pier Giovanni Pelfer and published by World Scientific. This book was released on 1996-02-09 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Cryogenic Engineering written by Peter Kittel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 2054 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Oregon Convention Center, Portland, Oregon, was the venue for the 1997 Cryogenic Engineering Conference. The meeting was held jointly with the International Cryogenic Materials Conference. John Barclay, of the University of Victoria, and David Smathers, of Cabot Performance Materials, were conference chairmen. Portland is the home of Northwest Natural Gas, a pioneer in the use of liquid natural gas, and Portland State University, where cryogenic research has long been conducted. The program consisted of 350 CEC papers, considerable more than CEC-95. This was the largest number of papers ever submitted to the CEC. Of these, 263 papers are published here, in Volume 43 of Advances in Cryogenic Engineering. Once again the volume is published in two books. CEC PAPER REVIEW PROCESS Since 1954 Advances in Cryogenic Engineering has been the archival publication of papers presented at the biennial CEC!ICMC conferences. The publication includes invited, unsolicited, and government sponsored research papers in the research areas of cryogenic engineering and applications. All of the papers published must (1) be presented at the conference, (2) pass the peer review process, and (3) report previously unpublished theoretical studies, reviews, or advances in cryogenic engineering.
Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1983 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific Bulletin written by and published by . This book was released on 1982 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
