Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by . This book was released on 1997 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Electron Traps in Silicon and Gallium Arsenide by Deep level Transient Spectroscopy written by Ruthanna Yusa DeJule and published by . This book was released on 1982 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy of Gallium Arsenide written by M. Henini and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep level Transient Spectroscopy Studies of Gallium Arsenide Aluminum Gallium Arsenide Heterostructures and Superlattices written by Paul Alan Martin and published by . This book was released on 1986 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of two projects. First, the feasibility of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAS-AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS. Deep-level transient spectroscopy is reviewed, as are theoretical and experimental attempts to predict and measure band offsets. A theory of electron capture into and emission out of quantum wells in response to pulsed bias is developed. DLTS studies of GaAs AlGaAs quantum-well structures are presented and compared with the results of previous studies of defects in MOCVD GaAs and AlGaAs. Emission of electrons out of the GaAs quantum well is observed, but at emission rates in excess of those predicted by thermionic emission or by phonon assisted tunneling. In the absence of a model for the emission process, meaningful data for band-edge discontinuities cannot be extracted from the measured emission rates. Further characterization of the emission process would be of great value in the development of devices based on heterojunction technology. Data are also presented from a DLTS study of defect states in GaAs - AlGaAs superlattices Doubling the layer thickness from 50 to 100 A resulted in a dramatic change in the defects observed. This is accounted for by the presence of a conducting miniband in one super-lattice and its absence in the other.
Download or read book Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy written by Ding-Yuan Samuel Day and published by . This book was released on 1980 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deel levels in the GaAs-GaP system. Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach. A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems . It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77 K and 300 K.
Download or read book Characterisation of Gallium Arsenide Using Deep Level Transient Spectroscopy written by D. A. Allan and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of a Deep Level Transient Spectrometer and Some Deep Level Studies of Gallium Arsenide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Development of a Deep Level Transient Spectrometer and Some Deep Level Studies of Gallium Arsenide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3121125 Subjects: Transients (Dynamics) Spectrum analysis Gallium arsenide semiconductors
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book A Study of Ion Implanted Gallium Arsenide Using Deep Level Transient Spectroscopy written by N. G. Emerson and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of a Deep Level Transient Spectrometer and Some Deep Level Studies of Gallium Arsenide written by Venkataramana Reddy Chavva and published by . This book was released on 1993 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Gallium Arsenide Solar Cell Structures Using Deep Level Transient Spectroscopy written by David Philip Rancour and published by . This book was released on 1990 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Deep Levels in 100 and 311 B Molecular Beam Epitaxial Gallium Arsenide by Constant capacitance Deep Level Transient Spectroscopy written by Ruthanna Yusa Dejule and published by . This book was released on 1987 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Related Studies in Gallium Arsenide with the Constant Capacitance Voltage Transient Technique written by Ming-Bing Chang and published by . This book was released on 1990 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of Deep level Photo thermal Spectroscopy and Photo Carrier Radiometry for the Characterization of Semi insulating Gallium Arsenide SI GaAs written by Jun Xia and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semi-insulating gallium arsenide (SI-GaAs) has gained great interest in recent years due to its wide application in optoelectronic devices and high-speed integrated circuits. An important feature of SI-GaAs is the high density of deep-level defect states, which control the electrical properties of the substrate by compensating the shallow defects. Over the years, deep-level transient spectroscopy (DLTS) and its variations have been the most effective tools employed for the characterization of deep-level defects. However, most of these techniques require a contact probe and tend to be quite restrictive in their applications' scope. In this thesis deep-level photo-thermal spectroscopy (DLPTS), an all-optical rate-window-based technique, is presented as a novel noncontact technique for the characterization of deep-level defects in SI-GaAs. The signal-generation mechanism for DLPTS is the super-bandgap excitation of carriers, and the sub-bandgap detection of the defect's thermal-emission process. Combined with the rate-window detection utilizing lock-in amplifiers, DLPTS measurements are performed in three different modalities: temperature-scan, pulse-rate scan, and time-scan. This work demonstrates that each mode provides unique information about the defect configuration, and, in combination, the modes offer a powerful tool for the study of defect properties and optoelectronic processes in SI-GaAs. A hierarchical carrier-emission theory is proposed to explain the thermal broadening (nonexponentiality) in photo-thermal spectra. The model is studied comparatively with the Gaussian distribution of activation energies, and their similarities demonstrate an ergodic equivalence of random energy distribution and the constrained hierarchical emission process. In addition, a rate-window gated photo-carrier radiometry (PCR) technique is developed. The original diffusion-based PCR theory is modified to reflect the signal domination by trap emission and capture rates in the absence of diffusion. Defect luminescence is collected and analyzed using photo-thermal temperature spectra and resonant detection combined with frequency scans. The study results in the identification of five radiative defect states and the defect-photoluminescence quantum efficiency.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Deep level Transient Spectroscopy Study of Anomalous Peak Height Behavior in MBE Grown Aluminum Gallium Arsenide written by Ping-Chih Chang and published by . This book was released on 1992 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
