Download or read book Deep Impurity Levels in Gallium Arsenide written by Remo Antonio Masut and published by . This book was released on 1982 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Impurities in Semiconductors written by Arthur George Milnes and published by Wiley-Interscience. This book was released on 1973 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2010-04-07 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Download or read book Deep Impurity States in Gallium Arsenide written by Claude M. Penchina and published by . This book was released on 1981 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have studied opto-electronic properties of semi-insulating gallium arsenide, including oxygen doped, chromium doped, undoped, and ion-bombarded materials. We have found that the luminescence from chromium-doped samples has much find structure which had not been previously seen; this led to a better understanding of chromium complexing and of local lattice vibration and Fano anti-resonance at a substitutional Cr site. We have identified two other luminescence bands as related to oxygen and native defects respectively. Photoconductivity and photo-Hall studies have elucidated some of the optical transitions and showed evidence that much of the spectral shape is due to quenching effects. DLTS and thermally-stimulated current measurements were used to study oxygen doped and 'undoped' semi-insulating GaAs, revealing a variety of deep and medium-deep levels. A combination of theory and experiment has proved valuable to the understanding of the photoionization cross sections, Fano anti-resonance, and local mode coupling of the deep impurity states. (Author).
Download or read book Characterization of Chromium and Oxygen Impurity Centers in Gallium Arsenide Material and FET Devices written by Ching-Der Chang and published by . This book was released on 1981 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies on the Structure of the Donor related Deep Level and Strain induced Effect in Gallium Arsenide and Aluminum Gallium Arsenide written by Zhiguo Wang and published by . This book was released on 1992 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Deep Level Impurities Oxygen and Chromium in Bulk Gallium Arsenide and Au GAAS Schottky Diodes written by Chern Huang and published by Sagwan Press. This book was released on 2015-08-25 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Download or read book Chromium doped Semi insulating Gallium Arsenide Grown by Liquid Phase Epitaxy written by David William Woodard and published by . This book was released on 1979 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Deep Level Impurities Oxygen and Chromium in Bulk Gallium Arsenide and Au GaAs Schottky Diodes written by Chern I. Huang and published by . This book was released on 1973 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1983-11-01 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Download or read book Best Of Soviet Semiconductor Physics And Technology 1989 1990 written by Michael S Shur and published by World Scientific. This book was released on 1995-12-08 with total page 667 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and personal contact, most of these, unfortunately, are neglected by many scientists from the United States, Japan as well as Western Europe. Consequently, many important developments in semiconductor physics are missed by the Western world.This book is a serious attempt to bridge the gap between the Soviet and Western scientific communities. Most of all, it is an effort towards facilitating the communication and sharing of knowledge amongst people from different parts of the world. Ultimately, the aim is to contribute towards the building of a better world for all — one where the knowledge of advanced technology and scientific discoveries is used to improve the quality of life and not the pursuit of selfish mutually destructive behavior. For those in the field who wish to partake in this exchange of knowledge and as a gesture of support for their Soviet counterparts, the reading of this book provides the first step.
Download or read book III V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
