Download or read book Correlation Between Atomic Flux Divergence and Electromigration Voiding in Single crystal Aluminum Interconnects written by Qingfeng Duan and published by . This book was released on 2000 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electromigration Failure and Reliability of Single crystal and Polycyrstalline Aluminum Interconnects for Integrated Circuits written by Young-Chang Joo and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electromigration Failure and Reliability of Single crystal and Polycrystalline Aluminum Interconnects for Integrated Circuits written by Young-Chang Joo and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Electromigration Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Download or read book Materials Reliability in Microelectronics VI Volume 428 written by William F. Filter and published by . This book was released on 1996-11-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.

Download or read book Materials Reliability in Microelectronics written by and published by . This book was released on 1996 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2092 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Guidebook for Managing Silicon Chip Reliability written by Michael Pecht and published by CRC Press. This book was released on 2017-11-22 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieving cost-effective performance over time requires an organized, disciplined, and time-phased approach to product design, development, qualification, manufacture, and in-service management. Guidebook for Managing Silicon Chip Reliability examines the principal failure mechanisms associated with modern integrated circuits and describes common practices used to resolve them. This quick reference on semiconductor reliability addresses the key question: How will the understanding of failure mechanisms affect the future? Chapters discuss: failure sites, operational loads, and failure mechanism intrinsic device sensitivities electromigration hot carrier aging time dependent dielectric breakdown mechanical stress induced migration alpha particle sensitivity electrostatic discharge (ESD) and electrical overstress latch-up qualification screening guidelines for designing reliability Guidebook for Managing Silicon Chip Reliability focuses on device failure and causes throughout - providing a thorough framework on how to model the mechanism, test for defects, and avoid and manage damage. It will serve as an exceptional resource for electrical engineers as well as mechanical engineers working in the field of electronic packaging.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 858 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Digital Technical Journal written by and published by . This book was released on 1992 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book VLSI Metallization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.

Download or read book Metals Abstracts written by and published by . This book was released on 1992 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Download or read book The Physics of Ultra High Density Magnetic Recording written by M.L. Plumer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Application-oriented book on magnetic recording, focussing on the underlying physical mechanisms that play crucial roles in medium and transducer development for high areal density disk drives.

Download or read book Physical Metallurgy Handbook written by Anil Kumar Sinha and published by McGraw-Hill Professional Publishing. This book was released on 2003 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt: The most comprehensive single-source guide to the production of metals andminerals ever published. Despite the advent of "high-tech" materials such as polymers, advanced ceramics, and graphite and boron fibre, the age of metals is far from over. The development of new alloys continues to be driven by the need for better, cheaper, more versatile engineering materials. Physical Metallurgy Handbook is directed toward understanding metallic materials and their properties. The handbook looks at the mechanisms associated with basic phenomena in metals and alloys as well as the various manufacturing processes that are employed when working with these materials.

Download or read book Reliability and Failure of Electronic Materials and Devices written by Milton Ohring and published by Academic Press. This book was released on 2014-10-14 with total page 759 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites