Download or read book Conventional and Pendeo epitaxial Growth of III nitride Thin Films by Molecular Beam and Metalorganic Vapor Phase Techniques written by Kevin James Linthicum and published by . This book was released on 1999 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H silicon Carbide 0001 Substrates Via Metalorganic Vapor Phase Epitaxy written by Darren Brent Thomson and published by . This book was released on 2001 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of III Nitrides Heterostructures Grown by Molecular Beam Epitaxy written by Che Woei Chin and published by LAP Lambert Academic Publishing. This book was released on 2011-05 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various techniques have been used to grow III-nitride heterostructures including metalorganic vapor deposition, hydride vapor epitaxy and molecular beam epitaxy (MBE). Among these techniques, MBE presents a number of advantages such as precise control of layer thickness and composition. MBE is a highly sophisticated system which thin film quality is sensitive to the growth parameters. From the literature, a systematic growth procedure has not been well-documented. This book presents an in depth understanding of MBE growth mechanism which is essential for thin film quality improvement. Detailed study on the growth mechanism allows the acquisition of the fundamental knowledge in growing precise optoelectronics device structures. This book focuses on the study of III-nitride thin films grown by MBE on various aspects, supported by analysis using a variety of structural and optical characterization techniques. The book starts with the introduction of the MBE architecture, follows by the detailed growth procedures. The characterization and analysis of various III-nitride thin films grown on Si and sapphire will be presented in the last part of the book.
Download or read book Growths of III V Nitride Semiconductors with the Techniques of Metalorganic Vapor Phase Deposition and Molecular Beam Epitaxy written by 黃政傑 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of III nitride Thin Films and Heterostructures by Gas source Molecular Beam Epitaxy written by Li-Kang Li and published by . This book was released on 2000 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of III nitride Growth Kinetics by Molecular beam Epitaxy written by Michael William Moseley and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emitting diodes have been commercialized based on this success, much less progress has been made in ultraviolet emitters, green emitters, and photovoltaics. This lack of development has been attributed to insufficient structural and electrical material quality, which is directly linked to the growth of the material. The objective of this work is to expand the understanding of III-nitride growth towards the improvement of current device capabilities and the facilitation of novel device designs. :Group-III nitride thin films are grown by molecular-beam epitaxy in a pulsed, metal-rich environment. The growths of nitride binaries and ternaries are observed in situ by transient reflection high-energy electron diffraction (RHEED) intensities, which respond to the behavior of atoms on the growing surface. By analyzing and interpreting these RHEED signatures, a comprehensive understanding of nitride thin film growth is obtained. :The growth kinetics of unintentionally doped GaN by metal-rich MBE are elucidated, and a novel method of in situ growth rate measurement is discovered. This technique is expanded to InN, highlighting the similarity in molecular-beam epitaxy growth kinetics between III-nitride binaries. The growth of Mg-doped GaN is then explored to increase Mg incorporation and electrical activation. The growth of InxGa1-xN alloys are investigated with the goal of eliminating phase separation, which enables single-phase material for use in photovoltaics. Finally, the growth of unintentionally doped and Mg-doped AlGaN is investigated towards higher efficiency light emitting diodes. :These advancements in the understanding of III-nitride growth will address several critical problems and enable devices relying on consistent growth in production, single-phase material, and practical hole concentrations in materials with high carrier activation energies.
Download or read book A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of III V Epitaxial Films written by Timothy J. Anderson and published by . This book was released on 1988 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: A program to compare the chloride, hydride and metal organic chemical vapor deposition techniques is described. A deposition system capable of depositing films by all three techniques was constructed and equipped with a modulated molecular beam mass spectrometer and, more recently, A Raman spectrometer. The thermal decomposition kinetics of NH3, PH3 and AsH3 were measured and the results applied to reactor operation. The hydride source region was analyzed and design procedure established. The unintentional incorporation of Si in GaAs and InP with the MOCVD process was investigated and methods of reducing these levels suggested. Substrates preparation procedures were compared using UHV surface analysis tools. A significatn amount of hydrogen was found in GaAs (100) substrates. Keywords: Vapor phase epitaxy, III-V semiconductors, Thin films, Ammonia, Phosphides, Gallium arsenides. (MJM).
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Organometallic Vapor Phase Epitaxy written by Gerald B. Stringfellow and published by Academic Press. This book was released on 1989-07-28 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Download or read book Three Nitride Metal Organic Vapor Phase Epitaxy Growth and Characterization and Use in Gas Sensing Devices written by Eunjung Cho and published by . This book was released on 2009 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Applications of Epitaxial Transition Metal Nitride Thin Film Heterostructures written by John Gilbert Wright and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continued improvements in the efficiency and speed of computation and telecommunication requires leveraging the properties of novel materials and materials interfaces. Superconductivity, a phenomenon that until now has not seen widespread application in microelectronic devices, appears poised for extensive implementation in technologies such as single flux quantum (SFQ) digital logic and Josephson junction-based quantum computing. The development of these technologies requires addressing outstanding materials challenges, such as realizing new materials and devices to enable improvements such as increased circuit density for SFQ circuits and low microwave noise Josephson junctions for enhanced coherence time superconducting qubits. Furthermore, while the existing nitride semiconductor materials have enabled new applications in optoelectronics, power electronics, and RF electronics, the ability to integrate these materials in epitaxial structures containing metallic and superconducting thin film materials creates new dimensions in the design space of semiconductor devices, allowing for the creation of novel devices. With these goals in mind, we have pursued the integration of metallic and superconducting transition metal nitrides, such as NbN and TiN, with III-N semiconductors (AlN, GaN, InN). Firstly, we have studied the growth and properties of NbN and TiN films grown by molecular beam epitaxy. We demonstrate that exceptionally high quality epitaxial thin films of NbN can be grown, and that tuning of the growth variables, such as elemental fluxes and substrate temperature, can control the structural phase and superconducting properties of the resultant NbN films. We demonstrate, for the first-time, phase pure beta-Nb2N thin films of the hexagonal crystal structure, and examine their superconducting and structural properties. Additionally, to better understand the electronic properties of both NbN and NbN/III-N interfaces, we examine the electronic interface between GaN and NbN using both Schottky barrier diodes and SX-ARPES, presenting the k-resolved imaging of the electronic states at this technologically interesting materials interface. To enable the realization of hybrid metal-semiconductor nitride devices, a detailed study of the growth of AlN and GaN on NbN is performed. We demonstrate that lattice misfit, surface energy mismatch, and chemical compatibility all present challenges to the realization of these heterostructures. Through the development of new growth strategies, we overcome these issues and demonstrate the growth of high crystal quality epitaxial AlN thin films grown on NbN. Finally, we utilize these films and heterostructures to fabricate several devices. We demonstrate the utilization of ultra-thin epitaxial NbN to fabricate superconducting nanowire single photon detectors (SNSPD). Utilizing the piezoelectric properties of AlN and the metallic properties of NbN, we fabricate epitaxial bulk acoustic wave (BAW) resonators. Finally, using NbN films as superconducting electrodes and an AlN film as a wide band gap semiconductor, we examine the properties of MBE grown NbN/AlN/NbN Josephson junctions.
Download or read book Atomistic Aspects of Epitaxial Growth written by Miroslav Kotrla and published by Springer Science & Business Media. This book was released on 2002-07-31 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the NATO Advanced Research Workshop, held in Dasia, Corfu, Greece, June 25-30, 2001
Download or read book Epitaxial Growth of III Nitride Compounds written by Takashi Matsuoka and published by Springer. This book was released on 2019-01-03 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Doping and Characterizations of III V Nitride Thin Films Deposited on alpha 6H SiC 001 Substrates Via Organometallic Vapor Phase Epitaxy written by T. Warren Weeks (Jr.) and published by . This book was released on 1995 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
