Download or read book Compound Semiconductor Power Transistors II and written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2000 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Power Transistors and written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 1998 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Power Transistors II written by and published by . This book was released on 2000 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Integrated Circuits written by Tho T. Vu and published by World Scientific. This book was released on 2003 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Download or read book Compound Semiconductor Electronics written by Michael Shur and published by World Scientific. This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Download or read book Compound Semiconductor RF Power Field Effect Transistors written by Alberto F. Basile and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Transistors written by Sandip Tiwari and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1993 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Materials and Devices written by Zhaojun Liu and published by Morgan & Claypool Publishers. This book was released on 2016-02-22 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Download or read book III V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2010-12-02 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.
Download or read book High Speed Compound Semiconductor Devices for Wireless Applications and State of the Art Program on Compound Semiconductors XXXIII written by A. G. Baca and published by The Electrochemical Society. This book was released on 2000 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book Topics In Growth And Device Processing Of Iii v Semiconductors written by Cammy R Abernathy and published by World Scientific. This book was released on 1996-11-09 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Download or read book Compound Semiconductor Device Physics written by Sandip Tiwari and published by Academic Press. This book was released on 2013-10-22 with total page 845 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Download or read book Compound Semiconductors for Generating Emitting and Manipulating Energy Volume 1396 written by Tingkai Li and published by Materials Research Society. This book was released on 2012-07-09 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium O, "Compound Semiconductors for Generating, Emitting and Manipulating Energy" was held November 28-December 2 at the 2011 MRS Fall Meeting in Boston, Massachusetts. Energy is arguably the most important issue for the future and this symposium provided a forum to discuss the research and development for collecting, emitting, and manipulating energy. A particular focus was made on recent advances in the scientific and technological exploration of compound semiconductors for applications as light emitters, solar cells, and transistors. Additionally, the topics covered in this proceeding include a broad range reaching from fundamental material development to device demonstration and industrial implementation. Contributions were made on the fabrication of devices such as LEDs, lasers, high-power, high-speed electronics and III-V solar cells. This symposium proceeding provides insight into emerging trends in these exciting technologies.
Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer Science & Business Media. This book was released on 2008-03-22 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Download or read book Complete Guide to Semiconductor Devices written by Kwok K. Ng and published by Wiley-IEEE Press. This book was released on 2002-07-25 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. As in the First Edition, the value of this text lies in its comprehensive, yet highly readable presentation and its easy-to-use format, making it suitable for a wide range of audiences. Essential information is presented for a quick, balanced overview Each chapter is designed to cover only one specific device, for easy and focused reference Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications The Second Edition has been significantly updated with eight new chapters, and the material rearranged to reflect recent developments in the field. As such, it remains an ideal reference source for graduate students who want a quick survey of the field, as well as for practitioners and researchers who need quick access to basic information, and a valuable pragmatic handbook for salespeople, lawyers, and anyone associated with the semiconductor industry.
Download or read book Characterization Modeling and Simulation of Compound Semiconductor Field effect Transistors and Integrated Circuits written by Jeffrey Scott Conger and published by . This book was released on 1992 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
