Download or read book Compact Modeling of Power Bipolar Transistor and Parasitic Bipolar Transistor in LDMOS Structures written by Yafei Bi and published by . This book was released on 1998 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book Three dimensional Simulation for Negative Resistance Characteristic of Parasitic Bipolar Transistor in Small sized MOSFET Structure written by Chiping Ju and published by . This book was released on 1992 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Download or read book Physics based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material specific physical effects and geometry scaling written by Tobias Nardmann and published by BoD – Books on Demand. This book was released on 2017-08-28 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.
Download or read book Modeling the Parasitic Substrate PNP Transistor Inherent in the Bipolar NPN Transistor Structure written by Charlotte E. Biber and published by . This book was released on 1989 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling the Bipolar Transistor written by Ian E. Getreu and published by Elsevier Science & Technology. This book was released on 1978 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book BMAS written by and published by . This book was released on 2005 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NQS Effects Investigation For Compact Bipolar Transistor Modeling written by Arkaprava Bhattacharyya and published by LAP Lambert Academic Publishing. This book was released on 2014-04 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
Download or read book Scalable Surface potential based Compact Model of High voltage LDMOS Transistors written by Wei Yao and published by . This book was released on 2012 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS manufacturing processes. As with other semiconductor devices, an accurate and physical compact model is critical for LDMOS-based circuit design. The goal of this research work is to advance the state-of-the-art by developing a physics-based scalable compact model of LDMOS transistors. The new model, SP-HV, is constructed from a surface-potential-based bulk MOSFET model, PSP, and a nonlinear resistor model, R3. The use of independently verified and mature sub-models leads to increased accuracy and robustness of an overall LDMOS model. Improved geometry scaling and simplified statistical modeling are other useful and practical consequences of the approach. Extensions are made to both PSP and R3 for improved modeling of LDMOS devices, and one internal node is introduced to connect the two component models. The presence of the lightly-doped drift region in LDMOS transistors causes some characteristic device effects which are usually not observed in conventional MOSFETs. These include quasi-saturation, a sharp peak in transconductance at low VD, gate capacitance exceeding oxide capacitance at positive VD, negative transcapacitances CBG and CGB at positive VD, a "double-hump" IB(VG) current and expansion effects. SP-HV models these effects accurately. It also includes a scalable self-heating model which is important to model the geometry dependence of the expansion effect. SP-HV, including its scalability, is verified extensively by comparison both to TCAD simulations and experimental data. The close agreement confirms the validity of the model structure. Circuit simulation examples are presented to demonstrate its convergence.
Download or read book Compact Modeling of SiC Insulated Gate Bipolar Transistors written by Sonia Marie Perez and published by . This book was released on 2016 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ̊C and at 125 ̊C; n-channel SiC at 25 ̊C and at 175 ̊C; and p-channel SiC at 150 ̊C and at 250 ̊C. Verification was performed through capacitance, DC output characteristics, and turn-off transient simulations. The validated MAST model was then translated into the Verilog-A language, and the Verilog-A model results were validated against the updated MAST model.
Download or read book A Compact Physically based Bipolar Transistor Model written by Kimon W. Michaels and published by . This book was released on 1989 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "A high current bipolar transistor model for circuit simulation which includes new base, B-C depletion, and collector region models is described. DC characteristics and execution time are compared with Gummel-Poon model and numerical device simulations."
Download or read book Compact Modeling of LDMOS Transistors for Extreme Environment Analog Circuit Design written by Avinash S. Kashyap and published by . This book was released on 2009 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Studies and Modeling of the Parasitic Bipolar Transistor in CMOS Technology written by Erhong Li and published by . This book was released on 1997 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Non Quasi static Effects Investigation for Compact Bipolar Transistor Modeling written by Arkaprava Bhattacharyya and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In the current work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and the results are compared with the published work. In popular bipolar model HICUM lateral and vertical NQS are examined separately and uses the same model for both transient and AC operation which requires an additional minimum phase type sub circuit. Compact modeling with HICUM model is performed in both measurement and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
