Download or read book Colloque International Du CNRS Sur Les Properties and Structure of Dislocations in Semiconductors written by Centre national de la recherche scientifique (France) and published by . This book was released on 1983 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Colloque International Du C N R S Sur Les Propri t s Et Structure Des Dislocations Dans Les Semiconducteurs written by and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties and Structures of Dislocations in Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.

Download or read book Properties and Structure of Dislocations in Semiconductors written by and published by . This book was released on 1983 with total page 499 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Dislocations and Properties of Real Materials written by Metals Society. Metal Science Committee and published by Ashgate Publishing. This book was released on 1985 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989-01-01 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.

Download or read book Proceedings of the Fifth International Conference on the Properties and Structures of Dislocations in Semiconductors written by International Conference on the Properties and Structures of Dislocations in Semiconductors and published by . This book was released on 1987 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mechanics And Materials Science Proceedings Of The 2016 International Conference Mms2016 written by Chin-wang Tao and published by World Scientific. This book was released on 2017-09-25 with total page 1283 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2016 International Conference on Mechanics and Materials Science (MMS2016) was held in Guangzhou, China on October 15-16, 2016.Aimed at providing an excellent international academic forum for all the researchers and practitioners, the conference attracted a wide spread participation among all over the universities and research institutes. MMS2016 features unique mixed topics of Mechatronics and Automation, Materials Science and Engineering, Materials Properties, Measuring Methods and Applications.This volume consists of 159 peer-reviewed articles by local and foreign eminent scholars, which cover the frontiers and hot topics in the relevant areas.

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Download or read book Colloque International Du C N R S Sur Les Propri t s Et Structure Des Dislocations Dans Les Semiconducteurs written by and published by . This book was released on 1983 with total page 499 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Proceedings of the International Symposium on the Structure and Properties of Dislocations in Semiconductors 6th Held in Oxford England 5 8 April 1989 Structure and Properties of Dislocations in Semiconductors 1989 written by and published by . This book was released on 1989 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).