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Book Chemical Vapor Deposition  Doping and Characterization of and Device Fabrication in Monocrystalline Alpha 6H  silicon Carbide Thin Films

Download or read book Chemical Vapor Deposition Doping and Characterization of and Device Fabrication in Monocrystalline Alpha 6H silicon Carbide Thin Films written by Yu-Cheng Wang and published by . This book was released on 1991 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Vapor Deposition  Characterization and Device Development of Monocrystalline Beta  and Alpha 6H  silicon Carbide Thin Films

Download or read book Chemical Vapor Deposition Characterization and Device Development of Monocrystalline Beta and Alpha 6H silicon Carbide Thin Films written by Hua-shuang Kong and published by . This book was released on 1988 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fundamentals of Silicon Carbide Technology

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Book SiC Power Materials

    Book Details:
  • Author : Zhe Chuan Feng
  • Publisher : Springer Science & Business Media
  • Release : 2004-06-09
  • ISBN : 9783540206668
  • Pages : 480 pages

Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Book Masters Theses in the Pure and Applied Sciences

Download or read book Masters Theses in the Pure and Applied Sciences written by W. H. Shafer and published by Springer Science & Business Media. This book was released on 1993 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 36 reports (for thesis year 1991) a total of 11,024 thesis titles from 23 Canadian and 161 US universities. The organization of the volume, as in past years, consists of thesis titles arranged by discipline, and by university within each discipline. The titles are contributed by any and all a

Book Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro  and Nano electromechanical Systems

Download or read book Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro and Nano electromechanical Systems written by Christopher Stephen Roper and published by . This book was released on 2007 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fundamental Studies and Device Development in Beta Silicon Carbide

Download or read book Fundamental Studies and Device Development in Beta Silicon Carbide written by Robert F. Davis and published by . This book was released on 1987 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research of this reporting period has involved (1) the chemical vapor deposition (CVD) of Beta-silicon carbide on off-axis silicon (100), (2) the growth of Beta- and alpha-SiC on monocrystalline alpha-SiC substrates, (3) high temperature ion implantation, and damage production studies, (4) the continued development of contacts for n- and p-type SiC, (5) reactive ion and plasma etching, and (6) the fabrication and evaluation of MESFETs and MOSFETs in Bet-SiC. Keywords: Doping; Aluminum nitride; Electron microscopy; Secondary ion mass spectroscopy; Rutherford back-scattering.

Book Chemical Vapor Deposition

    Book Details:
  • Author : S Neralla
  • Publisher : BoD – Books on Demand
  • Release : 2016-08-31
  • ISBN : 9535125729
  • Pages : 292 pages

Download or read book Chemical Vapor Deposition written by S Neralla and published by BoD – Books on Demand. This book was released on 2016-08-31 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.

Book Aerothermal Instrumentation Loads To Implement Aeroassist Technology in Future Robotic and Human Missions to MARS and Other Locations Within the Solar System

Download or read book Aerothermal Instrumentation Loads To Implement Aeroassist Technology in Future Robotic and Human Missions to MARS and Other Locations Within the Solar System written by Devendra S. Parmar and published by . This book was released on 2002 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Catalytic Chemical Vapor Deposition

Download or read book Catalytic Chemical Vapor Deposition written by Hideki Matsumura and published by John Wiley & Sons. This book was released on 2019-02-15 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.

Book Silicon Carbide Semiconductor Device Fabrication and Characterization

Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-11 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...

Book Chemical Vapor Deposition

    Book Details:
  • Author : Electrochemical Society. High Temperature Materials Division
  • Publisher : The Electrochemical Society
  • Release : 1997
  • ISBN : 9781566771788
  • Pages : 1686 pages

Download or read book Chemical Vapor Deposition written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 1997 with total page 1686 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon

Download or read book Epitaxial Growth and Optoelectronic Characterization of Cubic Silicon Carbide Deposited Using Chemical Vapor Deposition on Porous Silicon written by Frederick Paul Vaccaro and published by . This book was released on 1999 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Cubic silicon carbide is a promising material for applications in high-power, high-frequency, high-temperature, and high-speed electronic devices. Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) evaluations performed on thin films grown heteroepitaxially on porous (i.e. anodized) silicon using a new chemical vapor deposition (CVD) method employing trimethylsilane confirmed that the thin films were stoichiometric, cubic silicon carbide (3C-SiC). Conclusions were drawn on the basis of comparisons with published standards as well as with results generated on reference materials. SIMS profiles revealed the growth rates at approximately 1150̊C to vary from 2.1 to 4.0 Å/min. depending upon the slight variations in the CVD process trimethylsilane gas pressure. AFM evaluations revealed that the deposition mode at short deposition times was homo-oriented island nucleation and growth but that the 3C-SiC thin films evolved into continuous terraced layers at longer deposition times. Heterojunction (pn) junction diodes, fabricated from CVD and chemical vapor converted (CVC) porous silicon specimens, displayed world record breakdown voltages as high as 140 volts and 150 volts respectively. Historically, heterojunction (pn) junction diodes fabricated from 3C-SiC thin film specimens deposited on non-anodized displayed breakdown voltages below 10 to 20 volts.

Book Thin Film Chemical Vapor Deposition in Electronics

Download or read book Thin Film Chemical Vapor Deposition in Electronics written by Vladislav I︠U︡rʹevich Vasilʹev and published by Nova Science Publishers. This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is a summary of equipment, methodology and thin film growth experience obtained by the author during his 30 years of research work in the field of Integrated Circuit (IC) device technology. The monograph is concerned with the analysis of different aspects of different types of inorganic thin films grown by Chemical Vapor Deposition (CVD) methods and dedicated to the use in IC technology and production. The author discusses the methodology issues of thin film CVD and the fundamentals of the chemical kinetics of thin film growth. The main core of this monograph is the analysis of thin film CVD kinetics features obtained using different types of reactors, chemical compounds, process conditions. The monograph covers a wide variety of CVD-related aspects: equipment analysis, chemical compound features, CVD process methodology analysis, CVD kinetic features and their quantitative characterization, implementation of obtained numerical equations for thin film step coverage and gap-fill issues, interrelation of the film properties and CVD process features, and CVD process classification. The author would like to highlight that all the data presented in this book has been experimentally obtained by a number of research groups. Most of the data has been double-checked and confirmed. Surely, some data could not be repeated because it was obtained a long time ago using some specific deposition tools and processes. Nevertheless, the author would like to stress that he considers this book as an attempt to create a whole view on the thin film CVD for IC device technology applications. In this regard, the author has tried to generalize a large amount of experimental data, selecting the most common features of the film growth, composition, structure, and properties.

Book International Aerospace Abstracts

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization of Oxidation  Dry Etching and Device Performance of Monocrystalline Beta silicon Carbide Thin Films

Download or read book Characterization of Oxidation Dry Etching and Device Performance of Monocrystalline Beta silicon Carbide Thin Films written by John Williams Palmour and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: