Download or read book Characterization of Titanium Oxide as Gate Oxides on Polycrystalline Silicon and Amorphous Silicon Thin Film Transistors written by 李宏昌 and published by . This book was released on 2007 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability of Deposited Gate Oxides for Polycrystalline Silicon Thin Film Transistors written by Navakanta Bhat and published by . This book was released on 1996 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition and Characterization of Titanium Dioxide Thin Films written by David Christopher Gilmer and published by . This book was released on 1998 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Liquid Phase Deposited Titanium Oxideon Amorphous and Polycrystalline Silicon written by 許志敏 and published by . This book was released on 2006 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Silicon and Indium Phosphide MOS Structures with Titanium Oxide as Gate Oxides written by 黃俊杰 and published by . This book was released on 2005 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP Letters written by and published by . This book was released on 1995 with total page 846 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin film Transistors Fabricated Using Sputter Deposition of ZnO written by Nan Xiao and published by . This book was released on 2013 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Development of thin film transistors (TFTs) with conventional channel layer materials, such as amorphous silicon (a-Si) and polysilicon (poly-Si), has been extensively investigated. A-Si TFT currently serves the large flat panel industry; however advanced display products are demanding better TFT performance because of the associated low electron mobility of a-Si. This has motivated interest in semiconducting metal oxides, such as Zinc Oxide (ZnO), for TFT backplanes. This work involves the fabrication and characterization of TFTs using ZnO deposited by sputtering. An overview of the process details and results from recently fabricated TFTs following a full-factorial designed experiment will be presented. Material characterization and analysis of electrical results will be described. The investigated process variables were the gate dielectric and ZnO sputtering process parameters including power density and oxygen partial pressure. Electrical results showed clear differences in treatment combinations, with certain I-V characteristics demonstrating superior performance to preliminary work. A study of device stability will also be discussed."--Abstract.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Technical Abstracts written by and published by . This book was released on 1988 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Science and Technology written by and published by . This book was released on 1986 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Science and Technology 1983 1984 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch and published by . This book was released on 1985 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Fabrication and Characterization of MOSFETs with Titanium Dioxide and Hafnium Dioxide as Gate Dielectrics written by Tiezhong Ma and published by . This book was released on 2001 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Passivation of Amorphous Indium gallium zinc Oxide IGZO Thin film Transistors written by Nathaniel Walsh and published by . This book was released on 2014 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Thin-film transistors (TFTs) with channel materials made out of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively investigated. Amorphous silicon continues to dominate the large-format display technology; however newer technologies demand a higher performance TFT which a-Si:H cannot deliver due to its low electron mobility, μn ~ 1 cm2/V*s. Metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated semiconductor properties, and are candidates to replace a Si:H for TFT backplane technologies. This work involves the fabrication and characterization of TFTs utilizing a-IGZO deposited by RF sputtering. An overview of the process details and results from recently fabricated IGZO TFTs following designed experiments are presented, followed by analysis of electrical results. The investigated process variables were the thickness of the IGZO channel material, passivation layer material, and annealing conditions. The use of electron-beam deposited Aluminum oxide (alumina or Al2O3) as back-channel passivation material resulted in improved device stability; however ID VG transfer characteristics revealed the influence of back-channel interface traps. Results indicate that an interaction effect between the annealing condition (time/temperature) and the IGZO thickness on the electrical behavior of alumina-passivated devices may be significant. A device model implementing fixed charge and donor-like interface traps that are consistent with oxygen vacancies (OV) resulted in a reasonable match to measured characteristics. Modified annealing conditions have resulted in a reduction of back-channel interface traps, with levels comparable to devices fabricated without the addition of passivation material."--Abstract.
Download or read book Introduction to Microfabrication written by Sami Franssila and published by John Wiley & Sons. This book was released on 2005-01-28 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.
