Download or read book Characterization of the Gallium Arsenide on Silicon Interface and the Properties of Gallium Arsenide Devices on Silicon written by Keizo Adomi and published by . This book was released on 1990 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.

Download or read book Electrical Characterization of Gallium Arsenide silicon Heterojunctions for Device Applications written by Mahmut Seli̇m Ünlü and published by . This book was released on 1988 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical characterization of gallium arsenide on silicon written by Jiagang Shen and published by . This book was released on 1992 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds 1991 Proceedings of the Eighteenth INT Symposium 9 12 September 1991 Seattle USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Download or read book Gallium Arsenide And Related Compounds Proceedings Of The 3rd International Workshop written by Pier Giovanni Pelfer and published by World Scientific. This book was released on 1996-02-09 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.

Download or read book Growth and Characterization of Gallium Arsenide on Silicon on sapphire and Silicon written by Ming-Shiann Feng and published by . This book was released on 1989 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study has been conducted to investigate and compare the growth, strain, defects, electrical and optical properties of GaAs layers grown simultaneously on silicon-on-sapphire (SOS) and Si substrates using a two-step metalorganic chemical vapor deposition (MOCVD) growth procedure. A variety of techniques have been used to characterize and investigate the different properties of these two layers. Among them, x-ray diffraction was used to determine the lattice dimensions and thereby the sign of residual strain, x-ray rocking procedures to measure the strain and crystallinity, and variable temperature x-ray diffraction to investigate the temperature dependence of residual strain. Scanning electron microscopy (SEM) was used to examine the surface morphology. Transmission electron microscopy (TEM) was used to observe the microstructure and defect distribution as well as defect density. Also secondary ion mass spectroscopy (SIMS) was used to study the cross-diffusion from substrates. In addition, capacitance-voltage (C-V) measurements and Hall-effect measurements were used to determine the carrier concentration and mobility. Finally, photoluminescence (PL) was used to observe the low-temperature optical response of GaAs layers. The results of these investigations of GaAs on SOS and Si substrates are compared as a function of the thickness of GaAs layers. Finally, the effects of residual strain, presence of defects and cross-diffusion of Si on electrical and optical properties of GaAs layers are discussed.

Download or read book Gallium Arsenide Surfaces with Thin Silicon Overlayers written by Julio C. Costa and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Download or read book Silicon Nitride gallium Arsenide Interface written by John Edwin Foster and published by . This book was released on 1969 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1991 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Download or read book Integration of Gallium Arsenide on Silicon by Fluidic Self assembly written by Hsi-Jen James Yeh and published by . This book was released on 1994 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt: