Download or read book Characterization of Semi insulating Liquid Encapsulated Czochralski Gallium Arsenide written by David Chak Wang Hui and published by . This book was released on 1989 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Bulk Semi Insulating Gallium Arsenide written by R. L. Ross and published by . This book was released on 1981 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical and electrical properties of GaAs show it to be an important semiconductor material for use in various electronic devices associated with advanced military systems. However, the realization of enhanced device performance has been delayed, partly due to the lack of consistent, high quality, semi-insulating GaAs substrate material. A modified liquid-encapsulated Czochralski technique employing pressure-assisted, in-situ compounding is described. This process, first demonstrated in the United States by the US Army Electronics Technology and Devices Laboratory, consistently yields high resistivity (to 10 to the 9th power ohm-cm) GaAs without the intentional addition of charge compensators. This approach is now becoming the basis for U.S. volume production of large diameter, high quality, semi-insulating GaAs material. An automated system for the measurement of transport properties by use of the van der Pauw method is described. A mixed conduction analysis allows the direct determination of individual carrier concentrations and mobilities, intrinsic carrier concentration and Fermi level. Applied to ET & DL's non-Cr-doped GaAs, this analysis yields electron mobilities higher than Cr-doped material and Fermi levels which are nearly intrinsic. (Author).
Download or read book Characterisation of Deep Levels in Undoped Semi insulating Liquid Encapsulated Czochralski Gallium Arsenide written by J. S. Pooni and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Encapsulated Czochralski Growth Studies of Gallium Arsenide and Characterization of Silicon Dioxide Inclusions written by Lei Ping Lai and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Deep Levels in Semi insulating Liquid encapsulated Czochralski grown Gallium Arsenide by Photo induced Transient Spectroscopy written by Michael Robert Burd and published by . This book was released on 1984 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Electrically Active Impurity Levels in In situ Compounded Semi Insulating Gallium Arsenide written by H. A. Leupold and published by . This book was released on 1981 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Conductivity and Hall measurements were made on semi-insulating GaAs samples grown with a recently developed process using in-situ compounding with liquid encapsulated (B2O3) Czochralski growth techniques. Mixed conduction analysis in combination with a nomographic analysis of charge balance and conduction was used to elucidate compensation in this material. Given the Cr concentration in one sample, the use of an iterative self-consistent procedure allowed the deduction of total donor and acceptor concentrations for identically prepared Cr-doped and undoped samples. Further analysis yielded the compensation ratio and energy level of the dominant acceptor of a third specimen. A subsequent spark source analysis confirmed the high purity of this in-situ compounded material, as well as the conclusions and utility of the nomographic analysis. (Author).
Download or read book Liquid Encapsulated Compounding and Czochralski Growth of Semi Insulating Gallium Arsenide for Microwave Millimeter Wave Applications written by T. R. AuCoin and published by . This book was released on 1979 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A wide variety of semiconductor devices utilizing gallium arsenide are currently under development by the military for use in secure communication, improved surveillance, and high speed digital logic systems. The GaAs field effect transistor, a critical component in these systems, is experiencing a rapidly expanding use in oscillator, mixer, logic element, power amplification, and low-noise/high-gain applications. However, the full potential of this device has not been realized, partly because of poor and unpredictable quality semi-insulating GaAs substrates. More specifically, native defects, electrically active impurities, and diffusing charge traps are problems associated with commercial substrates. A silicon- and carbon-free modification of the liquid encapsulated Czochralski technique is described which yields high purity semi-insulating GaAs (approximately 10 to the 8th ohm-cm) without the intentional addition of charge compensators. The technique employs liquid encapsulated compounding of GaAs at nitrogen pressures to 100 atm, ultrapure elements, and pyrolytic boron nitride crucibles. A high pressure (135 atm) Varian HPCZ Czochralski crystal puller is employed for both compounding and crystal growth. (Author).
Download or read book Surface interface States and the Hall effect Measurement of Epitaxial and Semi insulating Liquid encapsulated Czochralski Gallium Arsenide written by William Raymond Miller and published by . This book was released on 1991 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first "working" mathematical model of surface-interface states in GaAs.
Download or read book Optimization of Silicon Sheet Growth and Liquid Encapsulated Czochralski Growth of Gallium Arsenide by Thermal capillary Modelling and Stress Analysis written by Paul David Thomas and published by . This book was released on 1988 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Optimization of Silicon Sheet Growth and Liquid Encapsulated Czochralski Growth of Gallium Arsenide by Thermal capillary Modeling and Stress Analysis written by Paul David Thomas and published by . This book was released on 1988 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semi Insulating III V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Download or read book Optical Characterization for Semi insulating Gallium Arsenide microform written by Yu Zhang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Infrared Characterization for Microelectronics written by W. S. Lau and published by World Scientific. This book was released on 1999 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the books on infrared characterization are for applications in chemistry and no book has been dedicated to infrared characterization for microelectronics. The focus of the book will be on practical applications useful to the production line and to the research and development of microelectronics. The background knowledge and significance of doing a particular type of infrared measurement will be discussed in detail. The principal purpose of the book is to serve as a useful handbook for practising engineers and scientists in the field of microelectronics.
Download or read book Development of Cathodoluminescence as a Characterization Technique for Semi insulating Gallium Arsenide written by Arthur Leroy Keigler and published by . This book was released on 1983 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
