Download or read book Characterization of Selective Epitaxial Graphene Growth on Silicon Carbide written by Farhana Zaman and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of this work is to study the growth of graphene on SiC using the novel method of selective graphitization. The major contributions of this research are as follows - First, epitaxial graphene is successfully grown on selected regions of SiC not capped by AlN deposited by molecular beam epitaxy. This contribution enables the formation of electronic-grade graphene in desired patterns without having to etch the graphene or expose it to any detrimental contact with external chemicals. Etching of AlN opens up windows to the SiC in desirable patterns for subsequent graphitization without leaving etch-residues (determined by XPS). Second, the impact of process parameters on the growth of graphene is investigated. Temperature, time, and argon pressure are the primary growth-conditions altered. A temperature of 1400oC in 1 mbar argon for 20 min produced the most optimal graphene growth without significant damage to the AlN capping-layer. Third, first-ever electronic transport measurements are achieved on the selective epitaxial graphene. Hall mobility of about 1550 cm2/Vs has been obtained to date. Finally, the critical limitations of the selective epitaxial graphene growth are enumerated. The advent of enhanced processing techniques that will overcome these limitations will create a multitude of opportunities for applications for graphene grown in this manner. It is envisaged to be a viable approach to fabrication of radio-frequency field-effect transistors.

Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by CRC Press. This book was released on 2018-01-19 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Download or read book Epitaxial Graphene on Silicon Carbide written by Michael W. Sprinkle and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material to replace silicon in post-CMOS electronics. This has come with rapid development of growth technologies, improved understanding of epitaxial graphene on the polar faces of silicon carbide, and new device fabrication techniques. The contributions of this thesis include refinement and improved understanding of graphene growth on the silicon- and carbon-faces in the context of managed local silicon partial pressure, high-throughput epitaxial graphene thickness measurement and uniformity characterization by ellipsometry, observations of nearly ideal graphene band structures on rotationally stacked carbon-face multilayer epitaxial graphene, presentation of initial experiments on localized in situ chemical modification of epitaxial graphene for an alternate path to semiconducting behavior, and novel device fabrication methods to exploit the crystal structure of the silicon carbide substrate. The latter is a particularly exciting foray into three dimensional patterning of the substrate that may eliminate the critical problem of edge roughness in graphene nanoribbons.

Download or read book Epitaxial Graphene on Silicon Carbide Surfaces written by Christian Riedl and published by . This book was released on 2010 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structural Characterization of Epitaxial Graphene on Silicon Carbide written by Joanna R. Hass and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature and a linear dispersion relation that causes carriers to behave as massless Dirac fermions are features that make graphene promising for high-speed, low-power devices. The critical advantage of epitaxial graphene (EG) grown on SiC is its compatibility with standard lithographic procedures.

Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by CRC Press. This book was released on 2018-01-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Download or read book Characterization of Defects and Evaluation of Material Quality of Low Temperature Epitaxial Growth written by Hrishikesh Das and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel process for low-temperature (LT) epitaxial growth of silicon carbide (SiC) by replacing the growth precursor propane with chloro-methane was recently developed at Mississippi State University. However, only limited information was available about the defects and impurity incorporation in the various types of epitaxial layers produced by this new method like blanket epitaxial layers, selectively grown epitaxial mesas, and highly doped epitaxial layers, prior to their comprehensive characterization in this work. Molten potassium hydroxide (KOH) etching, mechanical polishing and a variety of other characterizing techniques were used to delineate and identify the defects both in the epilayer and substrates. Under optimum growth conditions, the concentration of defects in the epitaxial layers was found to be less than that in the substrate, which established the good quality of the LT growth process. Defect concentrations, on selectively grown epitaxial layers, strongly depended on the crystallographic orientation of the mesa sidewall. The addition of HCl to the growth process, aimed at increasing the growth rate, caused a significant concentration of triangular defects (TDs) to be formed in the epitaxial layers. The TDs were traced down to the substrate by a combination of repeated polishing and molten KOH etching steps. The TDs were found not to originate from any substrate defects. Their origin was traced to polycrystalline silicon islands which form on the surface during growth and subsequently get evaporated away, which had made it impossible to detect them and suspect their influence on the TD generation prior to this work. The TDs were found to include single or multiple stacking faults bound by partial dislocations and, in some cases, inclusions of other SiC polytypes. Gradual degradation of the epitaxial morphology was found in heavily aluminum doped p+ layers, with an increase in the level of doping, followed by much steeper degradation when approaching the solubility limit of Al in 4H-SiC. Precipitates were the dominating defect at the highest levels of doping and were observed beyond a doping of 3.5x1020 cm-3. A dislocation generation model for heavily doped epitaxial layers was developed accounting for the stress in the lattice caused by Al doping.

Download or read book Growing Graphene on Semiconductors written by Nunzio Motta and published by CRC Press. This book was released on 2017-09-08 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.

Download or read book Graphene Growth Doping and Characterization for Device Applications written by Kara Berke and published by . This book was released on 2013 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lastly, Chapter 5 focuses on an alternative graphene growth process through epitaxial growth on SiC substrates via pulsed laser annealing (PLA). This process is further refined by using ion implantation as a means to selectively amorphize the sample surface prior to PLA to achieve graphitic growth in predetermined areas on the substrate. Raman spectroscopy and transmission electron microscopy are used to confirm the presence of graphene layers after PLA.

Download or read book Growth and Characterization of Epitaxial Graphene Films by Molecular Beam Epitaxy written by and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Epitaxial Growth of Silicon Carbide on Silicon by Low Temperature Chemical Vapor Deposition written by Ying Gao and published by . This book was released on 1997 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth Doping and Characterization of Monocrystalline Beta Silicon Carbide Thin Films and Fabrication of Electronic written by Hyeong Joon Kim and published by . This book was released on 1985 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth Doping and Characterization of Monocrystalline Beta Silicon Carbide Thin Films and Fabrication of Electronic Devices written by Hyeong Joon Kim and published by . This book was released on 1985 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial growth doping and characterization of monocrystalline beta silicon carbide thin films and fabriation of electronic devices written by Hyeong Joon Kim and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication Characterization and Modification of Epitaxial Graphene on 6H SiC 0001 Substrate written by 胡廷偉 and published by . This book was released on 2015 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy of Graphene on Gold Foils Growth and Characterization written by Anand Sampat and published by GRIN Verlag. This book was released on 2013-01-21 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master's Thesis from the year 2012 in the subject Materials Science, University of California, Berkeley , language: English, abstract: The application of graphene for large-area electronics requires controllable growth of single crystalline quasi-freestanding graphene films. Controllable growth of graphene films on gold foils at various temperatures using molecular beam epitaxy is shown. Film quality and electrical characteristics probed using Hall measurement, Raman spectroscopy, and Rutherford backscattering spectrometry are shown to improve at lower temperature possibly peaking at ~825 ̊C. Further experiments are required to assess a stronger correlation between growth parameters and film characteristics. In particular, varying carbon flux and increasing the number of growths are discussed.

Download or read book Selective Epitaxial Growth of Silicon Carbide on Silicon and Silicon Carbide Substrates by Chemical Vapor Deposition written by Brandy Kay Burkland and published by . This book was released on 2001 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: