Download or read book Characterization in Silicon Processing written by Yale Strausser and published by Elsevier. This book was released on 2013-10-22 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.
Download or read book Characterization in Silicon Processing written by Yale Strausser and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.
Download or read book Techniques and Challenges for 300 Mm Silicon written by H. Richter and published by Elsevier Science Limited. This book was released on 1999 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: The activities of the semiconductor industry to introduce a new, large wafer diameter were triggered by expected potential overall savings - cost and resource - and an anticipated increasing demand for Silicon wafers. In the beginning, around 1994, agreement on the diameter of the next wafer generation had to be achieved and finally 300 mm was globally accepted to be the next wafer diameter, a decision obtained at international summits in 1994/1995, based on the work of a SEMI task force. Several workshops on 300 mm wafers have been held by SEMI, JSNM and other organizations during the past few years. However, the present E-MRS conference on Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modeling and Equipment was the first international scientific conference about this subject. The papers - invited as well as submitted - cover a wide range of subjects, financial issues, fab concepts, crystal growth, wafer process development, material and defect issues, wafer characterization and provide an excellent review of the present status of 300 mm technology.
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book Characterization In Silicon Processing written by Y.E. Strausser and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Processing and Characterization with Ion Beams microform written by Mengbing Huang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1997 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous shrinkage of silicon devices is presenting challenges to ion beam processing and characterization of Si materials. In this thesis, we have studied some issues related to ion beam analysis and processing of silicon materials. First, we demonstrate the use of nuclear reaction analysis (NRA) combined with oxidation/etching to obtain the boron depth profile in a $\delta$-doped Si structure. Our measurements show very sharp interfaces between doped and undoped layers, with the attainable depth resolution of $\sim$0.7 nm. The technique is further applied to examine the B redistribution in the $\delta$-doped Si structure after solid phase epitaxial growth. Second, we study the effects of temperature and flux on the lattice damage induced by 1.0 MeV Si ion self-implantation. The decreasing rate of near-surface damage with implant temperature is distinctly different from that of end-of-range damage, suggesting that different mechanisms for damage formation are involved along the ion track. The flux effect on lattice damage is found to vary with temperature. Finally, we study boron transient enhanced diffusion (TED) under P and B isotope doping conditions. The effective boron diffusivity and the immobile boron density decrease with increasing P doping concentrations. This is consistent with the clustering model and suggests that the occurrence of TED for low boron concentration cannot be explained by the Fermi-level model. Compared to $\sp$B-free Si, $\sp$B TED in the $\sp$B-doped Si is retarded after the initial low-temperature annealing, while more broadening of the $\sp$B profile occurs in the $\sp$B-doped sample after a second annealing at high temperature. This phenomenon is discussed in terms of trapping of Si interstitials in $\sp$B doping background. This study also provides a means for testing the "+1" model which is important for TED modeling.
Download or read book Lifetime Spectroscopy written by Stefan Rein and published by Springer Science & Business Media. This book was released on 2005-11-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Download or read book Silicon Processing and Characterization with Ion Beams written by and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Characterization in Compound Semiconductor Processing written by Yale Strausser and published by Momentum Press. This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Download or read book Structural Characterization of Processed Silicon Wafers written by Peter L. Fejes and published by . This book was released on 1983 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Materials processing Characterization and Reliability written by and published by . This book was released on 2002 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Silicon Membrane Wafers and Optimization of Their Process Stability for Ultra thin Chip Fabrication written by Evangelos Angelopoulos and published by . This book was released on 2011 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Materials Processing Characterization and Reliability written by Janice L. Veteran and published by Cambridge University Press. This book was released on 2014-06-05 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a solid look into the technical status of the semiconductor industry. The evolution of transistors to miniaturization beyond the capabilities of conventional IC processing has created a need for materials research in many levels of the integrated circuit fabrication, including new materials in substrates, gates and interconnects. The transition from silicon-based chemistries to alternative materials shows the unique properties of silicon that have permitted the dramatic progress in semiconductor device advancement in the past. New materials and techniques to process and evaluate materials will be required to extend device advancements, with the constraint of commercial viability. This book brings together the research and development to provide a view of the manufacturing industry. Topics include: silicon materials and processing; gate dielectrics and devices; high-k dielectrics; dielectric characterization; gate oxides and interfaces; metals and interfaces; characterization using surface analysis techniques; oxides and silicides; metals and modeling; low-k dielectrics and reliability.
Download or read book Techniques and Challenges for 300 Mm Silicon Processing Characterization Modeling and Equipment written by H. Richter and published by . This book was released on 1999 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.
