Download or read book Characterization and reduction of defects in epitaxial Si and Si subscript 1 x Ge subscript x Si films grown by remote plasma enhanced chemical vapor deposition written by David Stephen Kinosky and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Crystallographic and electrical characterization of epitaxial GE subscript x Si subscript 1 x Si and in situ doped films grown by remote plasma chemical vapor deposition written by Rong-Zhen Qian and published by . This book was released on 1993 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low temperature in situ clean and Si and Si subscript 1 x and Ge subscript x epitaxy by remote plasma enhanced chemical vapor deposition written by Ting-Chen Hsu and published by . This book was released on 1992 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ge subscript x Si subscript 1 x epitaxial layers grown by rapid thermal processing chemical vapor deposition written by Kim Hsi-I Jung and published by . This book was released on 1989 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of the electrical properties of epitaxial silicon films grown by remote plasma enhanced chemical vapor deposition written by Rajan Sharma and published by . This book was released on 1996 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microstructural characterization of epitaxial silicon films grown by remote plasma enhanced chemical vapor deposition written by Ting-Chen Hsu and published by . This book was released on 1989 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition of Epitaxial Si Si Ge Ge and Novel High K Gate Dielectrics Using Remote Plasma Chemical Vapor Deposition written by Xiao Chen and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book In situ B doped Si epitaxial films grown by remote plasma enhanced chemical vapor deposition written by Joel Thornton Irby and published by . This book was released on 1992 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Formation of Epitaxial Si 1 X GE x Films Produced by Wet Oxidation of Amorphous SiGe Layers Deposited on Si 100 written by S. M. Prokes and published by . This book was released on 1988 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: I have been able to accomplish a significant amount of work in semiconductor thin films, especially Gallium arsenides on silicon heteroepitaxy. I have been involved in the growth of GaAs on silicon, and my interest has been concentrated in defect reduction and propagation. To this end, I have developed a new buffer layer technique which is formed by the implantation of germanium into silicon (100) and silicon (100) 4 to 110. The implanted wafers are then wet oxidized and a single crystal graded SiGe layer is formed. The second step then involves the growth of GaAs on this substrate. The final GaAs/SiGe/Si heterostructures have a reduction of misfit and threading dislocations, due to better lattice matching and thermal expansion coefficients of the SiGe alloy. (mjm).

Download or read book In Situ TEM Studies of the Growth of Strained Si Sub 1 Minus X Ge Sub X by Solid Phase Epitaxy written by and published by . This book was released on 1990 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper we report on the epitaxial growth of strained thin films Si{sub 1-x}Ge(subscript x) on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si{sub 1-x}Ge(subscript x) with x{sub Ge} = 11.6 at. % was epitaxially grown on {l angle}001{r angle} Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si{sub 1-x}Ge(subscript x) film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy Si{sub 1-x}Ge(subscript x) (x = 11.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C. 8 refs., 3 figs., 1 tab.

Download or read book Lateral Epitaxial Growth of Ge Films on Si Via a Vapor liquid solid Mechanism written by Weizhen Wang and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "In recent years, there has been an increasing interest in developing alternative semiconductor materials since traditional Si-based devices have approached their physical limits. Given that Si has many advantages over other materials as substrate, the use of Si wafer is expected to continue. It is therefore important to grow high-quality semiconductor materials, e.g., thin films or nanowires, epitaxially on Si. The past thirty years have seen rapid advances in the field of heteroepitaxial Ge growth on Si because Ge-based devices can add functionality to Si chips and may be the key to enable next-generation computer systems or solar cells. The direct growth of Ge on Si, however, suffers from high-density threading dislocations that are formed during the growth process; these defects act as scattering and recombination centers that degrade the device performance. In this thesis, a novel growth approach, metal-catalyzed, lateral epitaxial growth, is demonstrated to grow Ge films on Si with reduced threading dislocation density (TDD). In contrast to the traditional blanketed film growth on Si, this technique starts with a small crystal nucleation at a specific position on Si followed by a Ge lateral growth in the horizontal direction. It has been hypothesized that during the lateral growth process the lattice mismatch between Si and Ge can be accommodated by the extension of the preexisting misfit dislocations from the initial growth region or the nucleation of dislocations from the film sidewalls instead of generating additional threading dislocations from the film surface. In this thesis, SEM and TEM were two primary characterization techniques to study the film morphologies, the growth process, and the relaxation mechanisms. One important finding was that the first nucleation areas of the films often have a higher Si concentration or may be thinner compared to the lateral overgrowth areas. This is important because such differences made it possible to figure out where the first growth occurred in electron microscopy. From here we could compare the dislocation morphologies in different areas. In plan-view and cross-sectional TEM micrographs, high-density threading dislocations were found to be present in the initial growth areas while the lateral overgrowth areas demonstrated substantially reduced TDD or even defect-free areas. Moreover, the XRD results showed that the Ge films were almost fully relaxed with little Si incorporation. Given that the growth occurred at a low temperature, 375-500 °C, we suggest the presence of new relaxation mechanism since the previous mechanism, dislocation nucleation and glide, would require a much higher temperature to fully relax the lattice mismatch strain. Therefore, we hypothesize that the strain induced by the lattice mismatch can be relaxed by extending the preexisting misfit dislocations and that lateral growth can "build in" dislocations as it grows. Furthermore, this thesis proposes a simple model to describe the relation between the catalyst (Au) area and the area of the film in plan-view SEM; a film's size can thus be estimated by the size and shape of the Au catalyst. It has been found that a large Au catalyst can absorb more Ge due to its larger vapor-liquid interface, but more Ge is required to saturate the Au. This thesis also presents a study of the optimum growth condition of Ge lateral growth. The results show that high temperature and high GeH4 partial pressure can boost the growth rate and thus increase the film size within a specified period of time. However, high growth rate can cause more uncatalyzed, vapor-solid Ge growth on Si as well. A relatively lower growth rate and a longer growth time are thus required to simultaneously increase the size of the films and reduce the uncatalyzed growth." --

Download or read book Epitaxial Growth and Characterization of Si 1 x Ge x Materials and Devices written by Pallab Bhattacharya and published by . This book was released on 1997 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.

Download or read book Oxygen Incorporation During Low temperature Chemical Vapor Deposition and Its Effects on the Electronic Properties of Epitaxial Si and Si 1 x Ge x Films written by Peter V. Schwartz and published by . This book was released on 1992 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Coherent Strain Changes in Si Ge Alloys Grown by Ion Assisted Molecular Beam Epitaxy written by H. A. Atwater and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although low energy ion bombardment has been employed in various contexts epitaxial growth, such as enhanced dopant incorporation, surface cleaning during plasma enhanced chemical vapor deposition, and direct low energy ion beam deposition, key questions about the interaction of low energy ions with growing surfaces remain unanswered. Improved understanding of ion-surface interactions during growth may yield additional elements of control over epitaxial film structure, strain state, and composition. Of particular interest for high quality epitaxial films is the identification of the regime in which surface and near-surface processes, such as surface diffusion and incorporation at growth sites, can be enhanced at low temperatures while avoiding or controlling damage in the deposited films.

Download or read book Nucleation Epitaxial Growth and Characterization of beta SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition written by JiPing Li and published by . This book was released on 1994 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Si sub 1 x Ge subscript X Alloy Layers on Silicon written by and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Si{sub 0.88}Ge{sub 0.12}/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500--700C) has three main effects on SPER: these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphouse-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front. Recrystallization of amorphized SiGe layers at higher temperatures (1100C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures treading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the treading dislocation density is slightly higher with carbon implantation.

Download or read book Effects of Deposition Parameters on Thin Film Properties of Si based Electronic Materials Deposited by Remote Plasma enhanced Chemical Vapor Deposition written by Jeremy Alfred Theil and published by . This book was released on 1992 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: