Download or read book Characterization and Modeling of Low Frequency Noise and Dielectric Traps in Scaled MOSFET Devices written by Xiaochen Zhang and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization on SiON MOSFET devices are performed including I-V (Current-Voltage), C-V (Capacitance-Voltage), charge pumping etc. NMOS transistors exhibit a higher interface trap density (9.7E10 cm-2eV-1) than PMOS (5.8E10 cm-2eV-1). The mean capture cross sections are comparable in these devices: 3.3E-17 cm2 and 9.1E-17 cm2, receptively, for CMOS devices. Different mobility extraction methods are presented and the results indicate strong surface roughness scattering in these devices. The effects of channel carbon ion implantation (Cii) on advanced high-K metal gate low-power CMOS devices have been studies. Cii improves the device performance, especially for NMOS. The improvement comes mainly from an improvement in electron mobility, where Coulomb scattering is reduced due to retarded boron diffusion with carbon.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Low frequency Noise Characterization Evaluation and Modeling of Advanced Si and SiGe based CMOS Transistors written by Martin von Haartman and published by . This book was released on 2006 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Download or read book Flicker Noise of Scaled NMOS Devices with High K Dielectrics and Metal Gate Electrodes written by Xiaochen Zhang and published by ProQuest. This book was released on 2009 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been scaled to the extent where significant tunneling currents flow in the gate terminal. In order to prevent this current flow, high-K materials have been introduced into the gate dielectric stack to increase the physical thickness of the gate insulator, while reducing the equivalent electrical oxide thickness (EOT). The effect is to decrease the tunneling currents by several orders of magnitude and thereby decrease power dissipation while increasing gate density and increasing clock speed. However, several challenges arise in the process of scaling the gate insulator, such as increased trap densities at the silicon interface and in the high-K films, which enhances electron-hole recombination processes and increases the low-frequency noise in these device. This thesis describes the existing theories of 1/f noise and presents the noise characterization of scaled NMOS devices with high-K dielectrics (EOT
Download or read book The Journal of the Korean Physical Society written by and published by . This book was released on 2006 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems 4 Materials Science Processing Reliability and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1 f Noise in Hafnium Based High k Gate Dielectric MOSFETs and a Review of Modeling written by Siva Prasad Devireddy and published by ProQuest. This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For next generation MOSFETs, the constant field scaling rule dictates a reduction in the gate oxide thickness among other parameters. Consequently, gate leakage current becomes a serious issue with very thin SiO2 that is conventionally used as gate dielectric since it is the native oxide for Si substrate. This has driven an industry wide search for suitable alternate 'high-k' gate dielectric that has a high value of relative permittivity compared to SiO2 thereby presenting a physically thicker barrier for tunneling carriers while providing a high gate capacitance. Consequently, it is essential to study the properties of these novel materials and the interfaces that they form with the substrate, gate or other dielectrics in a multi-level stack. The main focus of this work is the 1/f noise that is specifically used as a characterization tool to evaluate the performance of high-k MOSFETs. Nevertheless, DC and split C-V characterization are done as well to obtain device performance parameters that are used in the noise analysis. At first, the room temperature 1/f noise characteristics are presented for n- and p-channel poly-Si gated MOSFETs with three different gate dielectrics- HfO2, Al2O3 (top layer)/HfO2 (bottom layer), HfAlOx. The devices had either 1 nm or 4 nm SiO2 interfacial layer, thus presenting an opportunity to understand the effects of interfacial layer thickness on noise and carrier mobility. In the initial study, the analysis of noise is done based on the Unified Flicker Noise Model. Next, a comparative study of 1/f noise behavior is presented for TaSiN (NMOS) and TiN (PMOS) gated MOSFETs with HfO2 gate dielectric and their poly-Si gated counterparts. Additionally, in TaSiN MOSFETs, the effect of the different deposition methods employed for interfacial layer formation on the overall device performance is studied. Finally, the 'Multi-Stack Unified Noise' model (MSUN) is proposed to better model/characterize the 1/f noise in multi-layered high-k MOSFETs. This model takes the non-uniform trap density profile and other physical properties of the constituent gate dielectrics into account. The MSUN model is shown to be in excellent agreement with the experimental data obtained on TaSiN/HfO 2/SiO2 MOSFETs in the 78-350 K range. Additionally, the MSUN model is expressed in terms of surface potential based parameters for inclusion in to the circuit simulators.
Download or read book Non classical MOSFETs written by Yu Yuan and published by . This book was released on 2012 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low power and high density requires scaling of MOSFETs in VLSI. As the Si based bulk MOSFETs scale down to the limit imposed by gate oxide tunneling induced gate leakage, short channel effects (SCEs) induced loss of control on electrostatic integrity, high body doping induced high Vt variation, and band-to-band tunneling induced high substrate leakage, etc., two categories of novel MOSFETs are being intensively investigated: Si multiple gate MOSFETs and high mobility III-V material based MOSFETs. Among all types of Si multiple gate MOSFETs, nanowire MOSFET is drawing quite a few attentions for its superior electrostatic control through all-around gate structure. High mobility III-V MOSFETs are considered as a principal candidate to achieve high speed without too aggressive scaling, which can keep good control of electrostatic integrity. This dissertation is primarily devoted to modeling and characterization of challenges and features which are becoming pronounced in aggressively scaled MOSFETs and high mobility material based MOSFETs. High-k dielectric on III-V MOS capacitors are intensively characterized and modeled with the focus on defects at insulator- semiconductor interface as well as inside the oxide, which are grand challenges for III-V MOSFETs. A distributed bulk-oxide trap model is developed to account for the commonly observed frequency dispersion of small signal capacitance-voltage and conductance-voltage data in accumulation and near flat band region. The observed C-V humps in depletion to strong inversion are modeled by interface states model. For III-V MOSFETs design, SCEs and raised source/drain issues are studied using TCAD simulation. Fabricated III-V MOSFETs are characterized and mobility is extracted through experimental current voltage data and multiple frequency gate to channel capacitance measurement and data. For multiple gate Si MOSFETs, this dissertation focuses on nanowire MOSFETs. SCEs based on generalized scale length theory are discussed and compact models are proposed and validated by TCAD simulation. Quantum confinement effects on Vt shift in nanowire MOSFETs with anisotropic effective mass are modeled. Scaling limit is projected for extremely scaled nanowire MOSFETs based on Vt shift sensitivity and scale length theory. Finally, inversion layer capacitance beyond the conventional bulk Si-based MOSFETs is investigated for III-V MOSFETs as well as two typical 3-D transistors, namely symmetric double-gate MOSFETs and nanowire MOSFETs.
Download or read book Low Frequency Noise Modeling in Single and Double gate MOSFETS written by Shailesh Rai and published by . This book was released on 2005 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This work presents a physics-based, analytical model for low-frequency or l/f noise in single- and double-gate MOSFETs. The model is an extension of a correlated low frequency noise model. The developed model takes into account the effects of quantization in the silicon channel, short channel characteristics of the device, and effective trap levels contributing to low-frequency noise generation mechanism. The inclusion of quantum effects is based on a self-consistent solution of Poisson and Schrödinger equations in the silicon inversion layer. For low-frequency noise calculation, both the number induced and correlated mobility-induced perturbations caused by the channel carriers' interactions with the oxide states are considered. The physical parameter, effective oxide trap levels at the semiconductor-insulator interface, is modeled using the Hooge parameter and is correlated with inversion charge of the device. The model has been used to predict the low-frequency noise characteristics of a single-gate (bulk) device, a single-gate (SOI) device and a double-gate (SOI) device"--Abstract.
Download or read book Fully Depleted Silicon On Insulator written by Sorin Cristoloveanu and published by Elsevier. This book was released on 2021-08-04 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." - Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient - Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices - Discusses FD-SOI's most promising device structures for memory, sensing and emerging applications
Download or read book Identification and Characterization of Gate Oxide Defects Responsible for Low Frequency Noise in MOSFETs written by A. S. M. Shamsur Rouf and published by . This book was released on 2021 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this work is to identify and characterize gate oxide defects that are present in submicron p-channel metal oxide semiconductor field effect transistors (pMOSFETs) and which are responsible for random telegraph signals (RTS). With the downscaling of MOSFETs, alternating capture and emission of channel carriers by defects residing at the oxide-semiconductor interface and bulk oxide have become a pronounced problem. Even though RTS has been used for several years as a tool to characterize the interface/bulk defects, RTS in pMOSFETs has been under-reported compared to that in nMOSFETs, resulting in less information on hole defects in pMOSFETs responsible for RTS. This work, using variable temperature RTS measurements on state-of-the-art pMOSFETs, provides an extensive study of the location of the active oxide defects and their energy in the oxide bandgap using a model based on first principles, and suggests a possible structure for the defects responsible for RTS. There has been a significant knowledge gap in the field of the role of hot carrier stress for hole trapping in pMOSFETs that lead to RTS. In addition, the origin of trap activation and deactivation due to stress in pMOSFETs is not completely understood yet. Obtaining information about the trap generation and passivation mechanisms and the newly generated trap structure would need extensive amount of RTS data on several pMOSFETs at both pre-stress and post-stress conditions. This work presents variable temperature RTS data on unstressed and stressed submicron pMOSFETs. A structure of the defects responsible for RTS is proposed that can be generated or passivated as a result of stress.At first room temperature RTS measurements were done on pMOSFETs of different gate areas biased at strong inversion and linear region of operation. The room temperature RTS data allowed extraction of trap position from the Si-SiO2 interface, trap energy level with respect to the SiO2 valence band edge and the trap capture cross-section. The variable temperature RTS data, on the other hand, can be used to obtain information on the trap energy parameters such as capture activation energy, change in enthalpy and entropy in the system due to carrier emission, and the trap relaxation energy. Variable temperature RTS measurements were done on the pMOSFETs varying the temperature from 295 K down to 165 K. The trap energy parameters thus obtained were compared to the already published trap parameters reported by several researchers using other techniques. A possible trap structure was suggested. Channel hot carrier (CHC) stress was applied to different sized pMOSFETs at room temperature for different durations. RTS measurements were performed following each stress step. Comparing the trap capture cross-sections and trap energy levels with respect to the SiO2 valence band edge to the previously reported trap parameters, a structure of the stress-generated traps was suggested. Traps were observed to appear and disappear randomly after each stress interval. A possible explanation behind such phenomenon was proposed as well. To obtain more information about the stress-induced traps, variable temperature measurements were done on fresh and stressed pMOSFETs. The MOSFETs were stressed at room temperature, and a subsequent RTS measurement was performed at temperatures from 295 K down to 165 K. Comparison of the energy parameters of the stress-induced traps with the already characterized traps allowed us to make conclusions on the structure of those stress-induced traps. Since 1/f noise is a major concern in short channel transistors, the traps responsible for 1/f noise in these devices need to be passivated as much as possible. This will help to quantify the maximum achievable limit of flicker noise in the downscaled devices, and hence find a technique for growth of gate oxide with minimal flicker noise. In this research, voltage and current noise power spectral densities of different sized nMOSFETs in three wafers with different oxide growth conditions have been measured, normalized, and compared. Correlations of the oxide growth steps with the measured flicker noise have been investigated.The main novelty of this work lies in the facts that (i) it is the first time when such detailed analyses has been done on hole defects near the Si-SiO2 interface that are responsible for RTS. A physical structure of the defects causing the switching events has been proposed. (ii) In addition to the process-induced defects, possible structures for stress-induced defects have also been discussed. (iii) Generation, activation and deactivation of traps with stress are experimentally observed and explained. Finally, (iv) Trap volatility because of stress has been observed, and explained. Possible defect structures have been suggested, which provides further insight into the reliability issues in pMOSFETs in terms of noise and degradation.
Download or read book Noise Characterization and Modeling of MOSFETs for RF IC Applications written by Chih-Hung Chen and published by . This book was released on 2002 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lastly, the design strategies of a low noise amplifier based on the developed noise models and extracted noise information are presented as a guide line to choose the device size and bias condition of the transistors. The impact of the model accuracy on the simulated noise performance of a two-stage low noise amplifier is also presented.
Download or read book Random Dopants and Low frequency Noise Reduction in Deep submicron MOSFET Technology written by Drake A. Miller and published by . This book was released on 2011 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each technological node which affects both analog and digital circuits in terms of decreased yields, performance, and noise margins. At deep sub-micron dimensions the Low-Frequency Noise (LFN) of the MOSFET is dominated by the influence of one or more active traps capturing and emitting charge to and from the oxide creating wide variations in the LFN from otherwise identical devices. Additionally, the random position of dopant atoms near the Si/SiO2 interface create a potential landscape that induces regions of high and low conductivity which in turn causes a situation where the current is no longer uniform in the device, but consist of individual current paths or percolating currents. The coupling between the random variation of the percolation current and active traps in the oxide are responsible for the large spread (> 3 orders of magnitude) in the noise characteristics observed in deep sub-micron MOSFET devices. The compact LFN model presented here accounts for the action of traps on percolating currents in deep-sub-micron and nano-scale MOSFETs. Two schemes for reduction of LFN are studied based on the smoothing of the surface potential. First, noise reduction is demonstrated with measurements on sub-micron MOSFETs with forward substrate bias. Secondly, the model is further verified through the reduction of noise by the removal of dopant atoms near the Si/SiO2 interface of the device. Both schemes result in a lower noise and threshold device. Finally, these experimental findings are applied to a 2.2um 2 MP CMOS image sensor. From the temporal noise measurements on threshold implant process splits, the image sensor noise has been significantly reduced as a direct result of fundamentals described by this MOSFET LFN model and further proves the validity of these findings.
Download or read book Systematic Analysis of the Small signal and Broadband Noise Performance of Highly Scaled Silicon based Field effect Transistors written by Sunitha Venkataraman and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this work is to provide a comprehensive analysis of the small-signal and broadband noise performance of highly scaled silicon-based field-effect transistors (FETs), and develop high-frequency noise models for robust radio frequency (RF) circuit design. An analytical RF noise model is developed and implemented for scaled Si-CMOS devices, using a direct extraction procedure based on the linear two-port noise theory. This research also focuses on investigating the applicability of modern CMOS technologies for extreme environment electronics. A thorough analysis of the DC, small-signal AC, and broadband noise performance of 0.18 um and 130 nm Si-CMOS devices operating at cryogenic temperatures is presented. The room temperature RF noise model is extended to model the high-frequency noise performance of scaled MOSFETs at temperatures down to 77 K and 10 K. Significant performance enhancement at cryogenic temperatures is demonstrated, indicating the suitability of scaled CMOS technologies for low temperature electronics. The hot-carrier reliability of MOSFETs at cryogenic temperatures is investigated and the worst-case gate voltage stress condition is determined. The degradation due to hot-carrier-induced interface-state creation is identified as the dominant degradation mechanism at room temperature down to 77 K. The effect of high-energy proton radiation on the DC, AC, and RF noise performance of 130 nm CMOS devices is studied. The performance degradation is investigated up to an equivalent total dose of 1 Mrad, which represents the worst case condition for many earth-orbiting and planetary missions. The geometric scaling of MOSFETs has been augmented by the introduction of novel FET designs, such as the Si/SiGe MODFETs. A comprehensive characterization and modeling of the small-signal and high-frequency noise performance of highly scaled Si/SiGe n-MODFETs is presented. The effect of gate shot noise is incorporated in the broadband noise model. SiGe MODFETs offer the potential for high-speed and low-voltage operation at high frequencies and hence are attractive devices for future RF and mixed-signal applications. This work advances the state-of-the-art in the understanding and analysis of the RF performance of highly scaled Si-CMOS devices as well as emerging technologies, such as Si/SiGe MODFETs. The key contribution of this dissertation is to provide a robust framework for the systematic characterization, analysis and modeling of the small-signal and RF noise performance of scaled Si-MOSFETs and Si/SiGe MODFETs both for mainstream and extreme-environment applications.
Download or read book Measurement and Modeling of 1 f Noise in MOSFET Devices with High kappa Material as the Gate Dielectric written by Tanvir Hasan Morshed and published by ProQuest. This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new 1/f noise model has been developed for MOSFET devices with high-kappa gate stack. To investigate the impacts of nitridation, MOSFETs with nitrided high-kappa dielectric was used. These devices were provided by Texas Instruments, having four different interfacial layer thicknesses with a stack composition of SiON/HfSiON. The dominant mechanism affecting the noise behavior of these devices was experimentally determined to be correlated number and mobility fluctuation. The impact of remote phonon scattering was investigated in the temperature range of 172K to 300K. It has been observed that the mobility characteristics of these devices were significantly affected by remote phonon scattering. However, the impact of remote phonon scattering was not observed on the flicker noise characteristics. The new model was developed in the frame work of the original Unified Model incorporating two distinct features that distinguish high-kappa gate stacks from SiO2. The new model considers energy and spatial dependence of trap distribution in the dielectric, thus generates a more realistic trap profile. Furthermore, it incorporates the multi layered structure of the gate stack by considering tunneling of carriers through a double step cascaded barrier. The newly developed model is accordingly called MSUN (Multi Stack Unified Noise) Model, named after the original Unified Model. MSUN Model has been successfully verified with data on MOSFETs having four different interfacial layer thicknesses, in the temperature range of 172K to 300K. The model predictions show very good agreement with data in the bias range of moderate to strong inversion. No specific impact due to nitridation was observed on these devices. The model has been successfully transformed into a compact form which is compatible with leading device simulation package used in the industry.
