Download or read book Characteristics and Application of Dualgate Insulated Gate Field effect Transistors written by Bernhard G. Ulfers and published by . This book was released on 1969 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties and Applications of the Insulated Gate Field Effect Transistor written by Louis Sickles and published by . This book was released on 1963 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Field Effect Transistor Applications written by William Gosling and published by . This book was released on 1964 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Computer Aided Analysis of Insulated Gate Field Effect Transistors written by Mark Brown Barron and published by . This book was released on 1969 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The classical analysis of Insulated Gate Field-Effect Transistors (IGFET) is reviewed and the corresponding theory is compared with experimental characteristics. The limitations of this theory are indicated and the reasons for the limitations are explained in terms of the device physics. Two operating configurations which do not comply with the classical theory are subsequently analyzed with the aid of a digital computer; these are low-level current operation for gate voltages near threshold, and punch-through operation for short devices. The numerical data obtained from the low-level analysis is compared with experimental V-I characteristics, and it is shown that the device can be accurately modeled using the classical surface physics equations. Algebraic approximations, which offer certain advantages over numerical analysis, are shown to adequately describe transistor operation over certain current ranges. Derivations of the finite difference equations for numerical iterative analysis of the IGFET are described in detail. Certain stability problems are found to occur and methods for avoiding these are presented. Results of the analyses of short-channel devices are presented in the form of three-dimensional projections of the potential and carrier distributions. (Author).

Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

Download or read book Insulated Gate Field Effect Transistors for Biomedical Applications written by Allen Johnson Menezes and published by . This book was released on 2003 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Insulated Gate Transistors written by Vajapeyam Sukumar and published by . This book was released on 1984 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Complementary Insulated Gate Field Effect Transistor Circuits written by Jon Christian Zimmerman and published by . This book was released on 1967 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: New circuits of higher order complementarity were investigated. Ten of these circuits exhibited unusual static volt-ampere characteristics. At least two applications were found for each circuit. Ten linear and digital applications were found for one circuit; it also exhibited an extensive negative resistance region. A discussion of various types (orders) of complementarity is presented and a list of properties for determining the order of complementarity is proposed. The study demonstrated the existence of a correlation between complementarity and versatility. However, additional research is needed to explore further the exact nature of this correlation. (Author).

Download or read book Insulated Gate Field Effect Transistors in Data Amplifiers written by Alfred Mario Nardizzi and published by . This book was released on 1967 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Properties of Insulated Gate Field Effect Transistors written by Mohamed Badruddin Bandali and published by . This book was released on 1971 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Designing with Field effect Transistors written by Edwin S. Oxner and published by McGraw-Hill Companies. This book was released on 1990 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: projetos eletronicos utilizando transistor de efeito de campo (fet).

Download or read book A STUDY IN THE OPERATION AND APPLICATION OF INSULATED GATE FIELD EFFECT TRANSISTOR AND THE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR written by and published by . This book was released on 1969 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Device Properties and Circuit Applications of the Dual Gate GaAs Microwave Field Effect Transistor written by Frank Tze-Pu Chang and published by . This book was released on 1979 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Accurate Model for the Short Channel Insulated Gate Field effect Transistor written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1971 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (

Download or read book Designing with Field effect Transistors written by Siliconix Incorporated and published by McGraw-Hill Companies. This book was released on 1981 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Field effect Transistors written by J. Torkel Wallmark and published by . This book was released on 1966 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Devices for Electronic Tuners written by Seiichi Watanabe and published by CRC Press. This book was released on 2020-02-13 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: This tract describes in detail the semiconductor components of the high-frequency front end-the electronic tuner-of televisions and VCRs. These high-frequency components substantially determine performance, including clarity of reception, and thus their quality is crucial to the success of electronic tuners. The semiconductor devices involved-voltage-variable capacitance diodes, band-switch diodes, dual-gate FETs, and others-are discussed in this book, as is their performance as mediators of tuning and amplification. Special emphasis is put on the analysis of distortion characteristics of tuning diodes and FETs, which are essential in providing tuners with high endurance against interfering signals. Design and fabrication processes well suited for mass production are also described. The content will be most informative not only to those involved in R&D and production of semiconductor devices, but also to high-frequency systems designers.