Download or read book Capabilities of Electron Beam Semiconductor Active Devices written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1968 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some properties of a class of active elements employing an electron beam to control the output current of a semiconductor device are discussed in this paper. It is shown that the basic beam-semiconductor devices have high gains, fast response and large output capability. Numerical data are given that allow the capabilities of the device to be evaluated in a given application. It is shown that the extreme configurational flexibility of the device may be employed to enhance its basic performance capability as well as to realize unique devices that can rapidly perform complex functions. (Author.

Download or read book Electron Physics Research Electron Beam Semiconductor Active Devices Lowpass Amplifier and Pulse Systems Final Report written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1970 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1978-02-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam semiconductor Active Device written by and published by . This book was released on 1970 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam Technology in Microelectronic Fabrication written by George Brewer and published by Elsevier. This book was released on 2012-12-02 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron-Beam Technology in Microelectronic Fabrication presents a unified description of the technology of high resolution lithography. This book is organized into six chapters, each treating a major segment of the technology of high resolution lithography. The book examines topics such as the physics of interaction of the electrons with the polymer resist in which the patterns are drawn, the machines that generate and control the beam, and ways of applying electron-beam lithography in device fabrication and in the making of masks for photolithographic replication. Chapter 2 discusses fundamental processes by which patterns are created in resist masks. Chapter 3 describes electron-beam lithography machines, including some details of each of the major elements in the electron-optical column and their effect on the focused electron beam. Chapter 4 presents the use of electron-beam lithography to make discrete devices and integrated circuits. Chapter 5 looks at the techniques and economics of mask fabrication by the use of electron beams. Finally, Chapter 6 presents a comprehensive description and evaluation of the several high resolution replication processes currently under development. This book will be of great value to students and to engineers who want to learn the unique features of high resolution lithography so that they can apply it in research, development, or production of the next generation of microelectronic devices and circuits.

Download or read book Techniques and Applications of Electron Beam Induced Current in Semiconductor Devices written by Martin R. Johnson and published by . This book was released on 1978 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam Semiconductor Devices written by and published by . This book was released on 1972 with total page 27 pages. Available in PDF, EPUB and Kindle. Book excerpt: The object of the program was to (a) evaluate the capability of an electron beam-semiconductor pulse amplifier for switching repeated short pulses of a few amperes with nanosecond risetime and (b) construct semiconductor diodes for use as an RF amplifier in an electron beam device.

Download or read book Electron Beam Semiconductor Devices written by United States. National Technical Information Service and published by . This book was released on 1976 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam Bombardment Effects on Active Devices written by Walford Ho and published by . This book was released on 1966 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Applications of Semiconductor Quantum Structures written by T. Yao and published by CRC Press. This book was released on 2001-01-01 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by international experts, Physics and Applications of Semiconductor Quantum Structures covers the most important recent advances in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, the book explores fabrication and characterization techniques, transport, optical, and spin-depende

Download or read book Technical Digest 1974 International Electron Devices Meeting written by and published by . This book was released on 1973 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth And Characterization Of Semiconductor Nanostructure For Device Applications written by Dr. Jehova Jire L. Hmar and published by BFC Publications. This book was released on 2023-03-04 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended to provide knowledge for students and learners in the field of nanoscale science and nanotechnology. Nanotechnology is design, fabrication and application of nanostructures or nanomaterials, and the fundamental understanding of the relationships between physical properties or phenomena and material dimensions. Nanotechnology deals with materials or structures in nanometer scales, typically ranging from subnanometers to several hundred nanometers. Nanotechnology is a new field or a new scientific domain. Similar to quantum mechanics, on nanometer scale, materials or structures may possess new physical properties or exhibit new physical phenomena. Nanotechnology has an extremely broad range of potential applications from nanoscale electronics and optics and therefore it requires formation of and contribution from multidisciplinary teams of physicists, chemists, materials scientists and engineers. The aim of this book “Growth and Characterization of Semiconductor Nanostructure for Device Applications” is to summarize the fundamentals and established techniques of synthesis, fabrication, characterization and applications of nanomaterials and nanostructures so as to provide readers a systematic and coherent picture about synthesis, fabrication and characterization of nanomaterials.

Download or read book Accelerator based Electron Beam Technologies for Modification of Bipolar Semiconductor Devices written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam Pn Junction Active Devices and Measurements written by Carroll Boyd Norris (Jr.) and published by . This book was released on 1966 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chapter I discusses past work with electron beam - pn junction active devices and explain the motivations for the present study. Chapter II describes measurement of the average energy storage energy required for creation of an electron-hole pair in single-crystal silicon by low-energy electron bombardment storage energy is found to be independent of bombardment energy and equal to approximately 3.6 eV for bombardment energies from 1 to 12 KeV. Chapter III describes measurement of the drift velocities of carriers in silicon at high electric fields by a time-of-flight technique. Carrier velocities are determined absolutely by measuring the transit time of carriers through a region of approximately uniform electric field and known width in a P(+)-Nu-n(+) diode. Drift velocity data for carriers in silicon are presented for electric fields between 4 and 40 KV/cm and the present data are compared with those obtained from measurements of current density in bulk samples as a function of electric field. Chapter IV employs the results obtained in Chapters II and III to analyze the dynamic response of electron beam - pn junction active devices. The primary assumptions in this analysis are that (1) carriers are created near one edge of the depletion region of the beam diode; (2) carriers traverse the depletion region with constant drift velocity; and (3) the beam diode is connected to a resistive load impedance, such as a reflectionless transmission line. It is shown that there exist optimum depletion region widths that maximize system performance under conditions of sinusoidal steady state and transient excitation.

Download or read book Electron Beam Testing Technology written by John T.L. Thong and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although exploratory and developmental activity in electron beam testing (EBT) 25 years, it was not had already been in existence in research laboratories for over until the beginning of the 1980s that it was taken up seriously as a technique for integrated circuit (IC) testing. While ICs were being fabricated on design rules of several microns, the mechanical ne edle probe served quite adequately for internal chip probing. This scenario changed with growing device complexity and shrinking geometries, prompting IC manufacturers to take note ofthis new testing technology. It required several more years and considerable investment by electron beam tester manufacturers, however, to co me up with user-friendly automated systems that were acceptable to IC test engineers. These intervening years witnessed intense activity in the development of instrumentation, testing techniques, and system automation, as evidenced by the proliferation of technical papers presented at conferences. With the shift of interest toward applications, the technology may now be considered as having come of age.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.