Download or read book Atomic Scale Engineering of the SiC SiO2 Interface written by and published by . This book was released on 1999 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO2 interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

Download or read book Atomic Structure of the Vicinal Interface Between Silicon Carbide and Silicon Dioxide written by Peizhi Liu (Researcher in materials science and engineering) and published by . This book was released on 2014 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The interface between silicon carbide (SiC) and silicon dioxide (SiO2) is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies showed an inverse relationship between the mobility and the transition layer width at SiC/SiO2 interface. In this research the transition region at the interface was investigated with atomic resolution transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). From a tilting series of high resolution TEM imaging and a through focal series of Z-contrast imaging, the 3D atomic structure of the SiC/SiO2 vicinal interface was constructed. The vicinal interface was revealed to consist of atomic steps and facets deviating from the ideal off-axis cut plane, which caused the atomic scale roughness of the interface. This is in strict contrast to previous studies that concluded on a chemical composition change. During the Z-contrast imaging, simultaneous EELS spectra were collected at the interface. A new model based method was developed to quantify these EELS spectra more precisely. Composition profiles of Si, C and O across the interface were extracted from the spectra. Composition profiles showed that the transition region was due to the vicinal interface and its atomic scale roughness but minimal stoichiometric change. Compositions calculated with a chemometrics approach conformed that the interface was stoichiometric. The transition layer width had an intrinsic value of ~2 nm viewed from the step edge-on direction. In addition, the interface of oxide layers grown on an on-axis cut substrate was examined with the same method mentioned above. The results showed the on-axis cut interface had the same composition fluctuation region as the off-axis cut interface viewing from the step edge-on direction. The roughness is directly correlated with processing conditions and the material system may have an intrinsic local roughness. This atomic scale roughness of the interface is limiting the electron mobility and reliability of SiC based devices.

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of the Origin of Mobility Loss at the SiC SiO2 Interface written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide band gap semiconductor with material properties which make it ideally suited for high temperature, high frequency, and high power metal oxide semiconductor field effect transistor (MOSFET) applications. The wide scale commercial development of these devices has been hindered due to disappointing electron mobility when compared to properties of the bulk material. This mobility loss has been associated with the interface between SiC and the native oxide formed (SiO2). Many improvements in mobility have been realized, but it is currently still significantly less than that of the bulk material. The work in this dissertation is aimed at understanding the origin of this mobility loss from an atomic perspective. Analytical electron microscopy techniques including scanning transmission electron microscopy (STEM), Z-contrast imaging, electron energy loss spectroscopy (EELS), convergent beam electron diffraction (CBED) are used in this study to characterize the 4H-SiC/SiO2 interface. The effect of aluminum implantation, nitric oxide annealing, oxidation rate, and activation annealing temperature on the interface was examined. We found a carbon rich transition layer present on the SiC side of the interface which varies in thickness depending on processing conditions. The thickness of this transition region is linearly related to the electron mobility. We were also able to determine that this transition region occurs as a result of the oxidation process. During oxidation, carbon interstitials are emitted on both sides of the interface, causing a carbon pileup on the SiC side of the interface, which we detect as a transition region. The rate of oxidation is also very important as oxidizing at a fast rate leads greater carbon pileup. The extra carbon in this transition region acts as electron scattering centers, which ultimately lead to a reduced electron mobility. This study is able to directly correlate the microstructure on an atomic scale with.

Download or read book Silicon Carbide and Related Materials 1999 written by Calvin H. Carter and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Download or read book Atomic Scale Characterization and First Principles Studies of Si3N4 Interfaces written by Weronika Walkosz and published by Springer. This book was released on 2011-04-19 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Download or read book Breakdown Phenomena In Semiconductors And Semiconductor Devices written by Michael E Levinshtein and published by World Scientific. This book was released on 2005-09-07 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.

Download or read book Silicon Carbide materials Processing and Devices written by and published by . This book was released on 2000 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polymer Composites for Electrical Engineering written by Xingyi Huang and published by John Wiley & Sons. This book was released on 2021-11-01 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explore the diverse electrical engineering application of polymer composite materials with this in-depth collection edited by leaders in the field Polymer Composites for Electrical Engineering delivers a comprehensive exploration of the fundamental principles, state-of-the-art research, and future challenges of polymer composites. Written from the perspective of electrical engineering applications, like electrical and thermal energy storage, high temperature applications, fire retardance, power cables, electric stress control, and others, the book covers all major application branches of these widely used materials. Rather than focus on polymer composite materials themselves, the distinguished editors have chosen to collect contributions from industry leaders in the area of real and practical electrical engineering applications of polymer composites. The books relevance will only increase as advanced polymer composites receive more attention and interest in the area of advanced electronic devices and electric power equipment. Unique amongst its peers, Polymer Composites for Electrical Engineering offers readers a collection of practical and insightful materials that will be of great interest to both academic and industrial audiences. Those resources include: A comprehensive discussion of glass fiber reinforced polymer composites for power equipment, including GIS, bushing, transformers, and more) Explorations of polymer composites for capacitors, outdoor insulation, electric stress control, power cable insulation, electrical and thermal energy storage, and high temperature applications A treatment of semi-conductive polymer composites for power cables In-depth analysis of fire-retardant polymer composites for electrical engineering An examination of polymer composite conductors Perfect for postgraduate students and researchers working in the fields of electrical, electronic, and polymer engineering, Polymer Composites for Electrical Engineering will also earn a place in the libraries of those working in the areas of composite materials, energy science and technology, and nanotechnology.

Download or read book Influence of Oxidation Parameters on Roughness at the Si SiO2 Interface written by M. Henzler and published by . This book was released on 1980 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: The roughness at the interface Si-SiO2 has been determined on an atomic scale after removal of the oxide by LEED (Low Energy Electron Diffraction). The energy dependent broadening of the diffracted electron beams yields the average size of step free terraces. Silicon (111) samples have been oxidized under various conditions concerning atmosphere (dry and wet oxygen), temperature (800 C and 1000 C), time pretreatment and posttreatment. The oxidation process produces a roughness, which may be decreased by low oxidation rates and appropriate annealing in non-oxidizing atmosphere. The novel technique of evaluation for the first time shows systematically, how oxidation parameters determine the roughness at the interface, which again is important for the performance of MOS-devices. (Author).

Download or read book Materials and Processes for Surface and Interface Engineering written by Y. Pauleau and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Processes for Surface and Interface Engineering, which has been written by experts in the fields of deposition technology and surface modification techniques, offers up to date tutorial papers on the latest advances in surface and interface engineering. The emphasis is on fundamental aspects, principles and applications of plasma and ion beam processing technology. A handbook for the engineer and scientist as well as an introduction for students in several branches of materials science and surface engineering.

Download or read book Technologies and Application of Engineering Materials written by Juraj Marek and published by Trans Tech Publications Ltd. This book was released on 2023-06-05 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Special topic volume with invited peer-reviewed papers only

Download or read book Atomic Scale Studies of Interface Formation Between Oxides and III V Semiconductor Surfaces written by Jonathon Boyd Clemens and published by . This book was released on 2010 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: The surface reconstructions of InAs(0 0 1)-(4 x 2) and In0.53Ga0.4--As(0 0 1)-(4 x 2) were investigated at 300 K and 80 K. At 300 K, the surfaces reconstruct to form the group III rich [beta]3'(4 x 2) reconstructions and at 80 K, the surfaces reconstruct to form the [beta]3'(4 x 4) reconstruction. A novel hybridization scheme is required for these reconstructions. Oxidation of the InAs(0 0 1)-(4 x 2) surface by O2 was studied and it was determined that this occurs via an autocatalytic process, displacing surface As. Oxidation is initiated on the group III rows of the surface, but the autocatalysis is in competition with a thermodynamic stability that limits the size of oxidation sites in the low coverage regime. Two methods for the formation of an interface between the high- & kappa; dielectric, HfO2 on InAs(0 0 1)-(4 x 2) and In0.53Ga0.4--As(0 0 1)-(4 x 2) were examined: reactive oxidation of Hf metal by O2 and electron beam deposition of HfO2. Reactive oxidation of Hf metal is problematic, but e− beam deposition of HfO2 showed that the p-type pinning behavior of In0.53Ga0.4--As(0 0 1)-(4 x 2) can be at least partially removed. Several oxygen atomic layer deposition (ALD) precursors were studied for the reaction (ALD initiation step) of high-[kappa] oxide growth on the InAs(0 0 1)-(4 x 2) surface : water, hydrogen peroxide, and isopropyl alcohol. All of these O precursors showed displacement reactions occurring on the III-V surfaces, but proceeded to varying degrees and by different pathways. Water displaces As, but does not fully oxidize it, HOOH etches the semiconductor surface at all temperatures, and isopropyl alcohol shows chemisorption site selectivity at 100 °C. The reaction of the ALD precursor, trimethyl aluminum (TMA) on InAs(0 0 1)-(4 x 2) and In0.53Ga0.4--As(0 0 1)-(4 x 2) was studied. An ordered, self-terminating single monolayer reaction occurs in the high coverage regime on both semiconductor surfaces. The p-type pinning behavior observed on the clean In0.53Ga0.4--As(0 0 1)-(4 x 2) surface is removed upon formation of the TMA-induced reaction; the surface was passivated for Al2O3 growth via metal-first ALD initiation. The major surface analytical techniques used were scanning tunneling microscopy and spectroscopy, low energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy.

Download or read book The Journal of Chemical Physics written by and published by . This book was released on 2003 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic scale structures at reactive silicide silicon interfaces written by Andrei Catana and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: