Download or read book Atomic Layer Deposition and Nucleation of Metals and Metal Oxides written by Berc Kalanyan and published by . This book was released on 2015 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Chemistry of Metal CVD written by Toivo T. Kodas and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: High purity, thin metal coatings have a variety of important commercial applications, for example, in the microelectronics industry, as catalysts, as protective and decorative coatings as well as in gas-diffusion barriers. This book offers detailed, up- to-date coverage of the chemistry behind the vapor deposition of different metals from organometallic precursors. In nine chapters, the CVD of metals including aluminum, tungsten, gold, silver, platinum, palladium, nickel, as well as copper from copper(I) and copper(II) compounds is covered. The synthesis and properties of the precursors, the growth process, morphology, quality and adhesion of the resulting films as well as laser- assisted, ion- assisted and plasma-assisted methods are discussed. Present applications and prospects for future developments are summarized. With ca. 1000 references and a glossary, this book is a unique source of in-depth information. It is indispensable for chemists, physicists, engineers and materials scientists working with metal- coating processes and technologies. From Reviews: 'I highly recommend this book to anyone interested in learning more about the chemistry of metal CVD.' J. Am Chem. Soc.
Download or read book Atomic Layer Deposition Applications 13 written by F. Roozeboom and published by The Electrochemical Society. This book was released on with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nucleation and Growth of Atomic Layer Deposition written by Zhengning Gao and published by . This book was released on 2018 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition (ALD) is a sequential, layer-by-layer, pin-hole free vapor-phase thin film deposition technique. ALD shows advantages over other thin film deposition techniques by enabling deposition of conformal and films with atomic scale controllability over thickness and composition. For ALD process, controlling the nucleation and growth is important since it will affect whether a continuous, conformal, and pin-hole free film can be deposited or not. The type of substrate and its surface functionalization determines the initial nucleation of ALD films, its evolving structure and hence the film properties. This thesis address these specific challenges in the ALD nucleation and growth (N&G) by, 1) understanding the substrate effect on N&G of ALD, 2) understanding the precursor ligands effect on N&G of ALD, 3) understanding effect of ALD N&G films coupled to optically active metal surfaces and nanostructures. In the first part of this thesis, the substrate effect on N&G of ALD is studied by ALD ZnO and Al2O3 on hydroxylated Si substrate and Au substrate. These two ALD processes have similar surface reaction. On Si substrate, 71.6% OH groups are associated with sitting molecule. No observation of nucleation delay. In Au substrate, an initial hydrophobic surface, takes 37 cycle for ALD Al2O3 to finish nucleation and grows as a film. After UV Ozone treatment to tune the Au surface into "clean"-hydrophilic state, the ALD ZnO only takes 5 cycle to finish nucleation. The second part of the thesis, the precursor ligands effect on N&G of ALD is investigated by an ALD Ru process with a zero valent Ru precursor - RuDMBD(CO)3, and H2O. It shows that the complementary effect between precursor ligands dominate the nucleation and growth of Ru film on hydroxylated surface. The third part of the thesis, ALD N&G films coupled to optically active metal and nanostructures is studied by applying ALD Al-doped-ZnO on AuNRs in anodic aluminum oxide (AAO) template to fabricate a 3D nanostructure plasmonic hot carrier device. The uniform coating of ALD film enhance the possibility to make complex plasmonic hot carrier device with moderate quantum efficiency. The study presented in this thesis opens up new direction of studying ALD N&G that focus on the substrate and precursor chemistry. While studying ALD N&G can enhance the understanding about the basic of ALD, the final goal for using ALD is for application. Conformal and pin-hole free coating is critical film deposition.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Surface and Subsurface Reaction Mechanisms in Atomic Layer Deposition of Metals and Metal Oxides written by Joel Richard Schneider and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanotechnology has shown remarkable versatility and strength in response to large-scale challenges facing society today, despite many of its technical applications being on the atomic scale. From renewable energy devices to medical and sequencing technologies, to three-dimensional transistor architectures, advanced water purification, and novel organic-inorganic hybrid materials, nanotechnology has enabled powerful advances through precisely creating materials with specific chemistries and nanostructures. Thin films are particularly robust in their applications, and atomic layer deposition (ALD) is a thin film deposition technique with demonstrated strengths in precision, tunability, and structural control. The core principles of ALD that allow it to achieve these powerful results rely on self-limiting surface chemical reactions; however, despite the prevalence of ALD reports in the literature there are still many surface mechanisms that are poorly understood. ALD material properties can be highly sensitive to process conditions, impurities introduced from surface reactions, subtle changes in reaction rates, and many more phenomena, so it is critical to fully understand the surface reaction mechanisms at play in ALD to effectively implement processes and design chemistries for new materials. Especially as ALD is often idealized to behave in a simple self-limiting manner, the presence of more complex surface reactions that deviate from this behavior necessitates deeper study. As a result, this dissertation presents work to find, characterize, and model new reaction mechanisms in ALD that cause deviations from ideal behavior, then generalize that understanding and apply it to new chemical systems. The first half of the work focuses on activating surface species in the ALD of metal oxides. ALD of iron oxide using ozone is investigated as a case study, and we find that during the process ozone generates reactive oxygen species that migrate below the surface of the growing film where they are stored. The expansion of the ALD reactions beyond the surface of the film to a reservoir of active species in the subsurface region has a host of implications on the ALD process and the resulting material. The storage of reactive species results in high growth rates, and the physical movement of species through the film causes preferential crystalline rearrangement and film roughening. Further studies of nickel oxide ALD found related behaviors, indicating it grows by a similar mechanism of subsurface active species storage. In both cases, the oxygen species are reactive enough to activate surface combustion reactions, including in ALD of other materials grown on top of the reactive reservoirs. These mechanisms are consistent with reports of some other oxides, suggesting oxygen mobility and oxidizability of the metal center may be important factors in facilitating this reservoir mechanism. The second half of this thesis focuses instead on surface passivating species in metal ALD. As ALD hinges on self-limiting reactions resulting from the surface being passivated toward further reaction, the persistence of passivation is key to consistent and precise process function. A promising precursor for ruthenium ALD, Ru(DMBD)(CO)3, is studied due to its unique passivation mechanism of L-type ligands bonded to a zero-oxidation state metal center. Some reports have hypothesized this bonding results in excellent nucleation and growth properties, while others that it results in poor deposition control with better applications in continuous-deposition processes. By studying this ALD process, we can then gain insight into both surface passivation mechanisms and broader principles for process design of metals and zero-oxidation state compounds. We find the precursor undergoes a spontaneous decarbonylation reaction mechanism whereby the surface is initially passivated with carbonyl species that are lost with increasing temperature or time. Comparison of in situ characterization data and first principles kinetic modeling support these findings. Our results help explain inconsistencies in previous reports as well as observations of other zero-oxidation state precursors. Together, characterizing new surface mechanisms in ALD of both activating and passivating species gives a more complete picture of how a range of ALD processes can deviate from idealized and simplified self-limiting surface reactions. These findings span the breadth of both metal and metal oxide ALD, and we apply the insights to new ALD systems involving multicomponent and catalytically activated ALD processes. These grow the chemical toolbox of ALD and illustrate how a proper fundamental chemical understanding of ALD is important not only for effective implementation and control of existing processes but also for generalizing, expanding, and designing tools for ALD to further widen its horizons.
Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.
Download or read book Atomic Layer Deposition Applications 2 written by Ana Londergan and published by The Electrochemical Society. This book was released on 2007 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue gives an overview of the cutting edge research in the various areas where Atomic Layer Deposition (ALD) can be used, enabling the identification of issues, challenges, and areas where further research is needed. Contributions include: Memory applications, Interconnects and contacts, ALD Productivity enhancement and precursor development, ALD for optical and photonic applications, and Applications in other areas, such as MEMs, nanotechnology, fabrication of sensors and catalysts, etc.
Download or read book Area Selective Atomic Layer Deposition and Vacuum Ultraviolet Enhanced Annealing for Next Generation Nanofabrication written by Xin Yang (Ph. D. in chemical engineering) and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Area selective atomic layer deposition (AS-ALD) of metals and metal oxides as well as vacuum ultraviolet (VUV) enhanced annealing is presented as next generation nanofabrication processes. We propose SnO2 as a reactive ion etching mask in fluorine-based etching processes. Tin forms nonvolatile compounds with fluorine at the process temperatures enabling tin to function as an etch mask. No nucleation delays were observed on Si thermal oxide and Si native oxide, while they were found on H-terminated Si(001) producing continuous films with pinhole defects. Etch proof-of-concept is studied using polystyrene patterns followed by 20 to 100 ALD cycles of SnO2. Well-defined grid patterns are transferred 1.2 μm into Si(001) with SF6 RIE when 50 ALD cycles of SnO2 is grown, which is approximately 4 nm thick. In addition, VUV enhanced O2 annealing is explored to improve the performance of Ba [subscript x] Sr [subscript 1-x] TiO3 as an oxide layer in memory devices. The co-exposure of VUV and O2 generates O and O3, along with O2, which was used to heal the oxygen vacancies to lower the leakage current of the BST film. I-V measurements show that the leakage current is improved by more than 4 orders of magnitude after annealed at both 250 0C and 100 0C. However, k is lowered after VUV/O2 annealing at 250 0C, suggesting the formation of GeO [subscript x] in series with the BST films. The film annealed at 100 0C under VUV/O2 shows similar k as before annealing, indicating that annealing at low temperature with VUV enhancement may be a potential method to lower the leakage current while maintaining the k. Moreover, AS-ALD of Pd by surface activation is achieved at 100 0C as the catalyst layer for copper electroless deposition to make flexible displays. Pd is shown to be deposited on Ni surface, and not on NiO [subscript x] surface. Full reduction of the NiO [subscript x] surface is not required to initiate the Pd ALD process. The electroless Cu deposition catalysis layer, which is Pd in our case, was deposited by area activation of Ni/NiO [subscript x]. Cu was subsequently deposited on the Pd. No Cu can be deposited if Pd is absent. Uniformity of the Pd film thickness can change the thickness of Cu that is deposited at the same condition
Download or read book Organometallic Chemistry written by Nathan J Patmore and published by Royal Society of Chemistry. This book was released on 2018-11-16 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the increase in volume, velocity and variety of information, researchers can find it difficult to keep up to date with the literature in their field. Providing an invaluable resource, this volume contains analysed, evaluated and distilled information on the latest in organometallic chemistry research and emerging fields. The reviews range in scope and include π-coordinated arene metal complexes and catalysis by arene exchange, rylenes as chromophores in catalysts for CO2 photoreduction, metal nodes and metal sites in metal–organic frameworks, developments in molecular precursors for CVD and ALD, and multiphoton luminescence processes in f-element containing compounds.
Download or read book Nucleation and Growth Mechanisms in Atomic and Molecular Layer Deposition for Applications in Microelectronics and Metal Organic Frameworks written by Rachel Anna Nye and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition written by Tommi Kääriäinen and published by John Wiley & Sons. This book was released on 2013-05-28 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Download or read book Chemistry of Atomic Layer Deposition written by Seán Thomas Barry and published by Walter de Gruyter GmbH & Co KG. This book was released on 2021-11-08 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will help chemists and non-chemists alike understand the fundamentals of surface chemistry and precursor design, and how these precursors drive the processes of atomic layer deposition, and how the surface-precursor interaction governs atomic layer deposition processes. The underlying principles in atomic layer deposition rely on the chemistry of a precursor with a surface.
Download or read book 2D Metal Carbides and Nitrides MXenes written by Babak Anasori and published by Springer Nature. This book was released on 2019-10-30 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the rapidly expanding field of two-dimensional (2D) transition metal carbides and nitrides (MXenes). It covers fundamental knowledge on synthesis, structure, and properties of these new materials, and a description of their processing, scale-up and emerging applications. The ways in which the quickly expanding family of MXenes can outperform other novel nanomaterials in a variety of applications, spanning from energy storage and conversion to electronics; from water science to transportation; and in defense and medical applications, are discussed in detail.
Download or read book Atomic Layer Deposition of Alkaline Earth Oxides written by Han Wang and published by . This book was released on 2013 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials Science written by Yitzhak Mastai and published by BoD – Books on Demand. This book was released on 2013-06-10 with total page 563 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today modern materials science is a vibrant, emerging scientific discipline at the forefront of physics, chemistry, engineering, biology and medicine, and is becoming increasingly international in scope as demonstrated by emerging international and intercontinental collaborations and exchanges. The overall purpose of this book is to provide timely and in-depth coverage of selected advanced topics in materials science. Divided into five sections, this book provides the latest research developments in many aspects of materials science. This book is of interest to both fundamental research and also to practicing scientists and will prove invaluable to all chemical engineers, industrial chemists and students in industry and academia.
Download or read book Chemical Vapour Deposition written by Anthony C. Jones and published by Royal Society of Chemistry. This book was released on 2009 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
