Download or read book Atomic Diffusion in III V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
Download or read book Atomic Diffusion in III V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-30 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Download or read book Atomic Diffusion in Semiconductor Structures written by G. B. Abdullaev and published by Routledge. This book was released on 1987 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.
Download or read book Diffusion Processes in Advanced Technological Materials written by Devendra Gupta and published by Springer Science & Business Media. This book was released on 2013-01-15 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by . This book was released on 1973-05-01 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion in Solids written by Helmut Mehrer and published by Springer Science & Business Media. This book was released on 2007-07-24 with total page 645 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the central aspects of diffusion in solids, and goes on to provide easy access to important information about diffusion in metals, alloys, semiconductors, ion-conducting materials, glasses and nanomaterials. Coverage includes diffusion-controlled phenomena including ionic conduction, grain-boundary and dislocation pipe diffusion. This book will benefit graduate students in such disciplines as solid-state physics, physical metallurgy, materials science, and geophysics, as well as scientists in academic and industrial research laboratories.
Download or read book Ion Exchange in Single Crystals for Integrated Optics and Optoelectronics written by Yu N. Korkishko and published by Cambridge Int Science Publishing. This book was released on 1999 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses many problems of ion exchange processes in LiNbO3, LiTaO3 and KTiOPO4 ferroelectrics and II-VI semiconductor single crystals for integrated optics applications. The authors start with the fundamentals of ion exchange processes in solids (Chapter 1). Chapter 1 can be considered also as an enlarged introduction to the book. Starting with Chapter 2, the general properties of LiNbO3 and LiTaO3 crystals, the methods used to study optical waveguides in these crystals as well as advanced preparation methods of optical waveguides are reviewed. Chapters 3, 4 and 5 are devoted to recent progress in the ion exchange processes in LiNbO3, LiTaO3 and KTiOPO4 crystals, respectively, and Chapter 6 summarizes the main applications of ion-exchanged waveguides in modern integrated optics. Finally, Chapter 7 deals with recently established ion exchange processes in II-VI semiconductors.
Download or read book Formation Of Semiconductor Interfaces Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Download or read book Transformations of Materials written by Dimitri D Vvedensky and published by Morgan & Claypool Publishers. This book was released on 2019-09-30 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Phase transformations are among the most intriguing and technologically useful phenomena in materials, particularly with regard to controlling microstructure. After a review of thermodynamics, this book has chapters on Brownian motion and the diffusion equation, diffusion in solids based on transition-state theory, spinodal decomposition, nucleation and growth, instabilities in solidification, and diffusionless transformations. Each chapter includes exercises whose solutions are available in a separate manual. This book is based on the notes from a graduate course taught in the Centre for Doctoral Training in the Theory and Simulation of Materials. The course was attended by students with undergraduate degrees in physics, mathematics, chemistry, materials science, and engineering. The notes from this course, and this book, were written to accommodate these diverse backgrounds.
Download or read book 4D Electron Microscopy written by Ahmed H. Zewail and published by World Scientific. This book was released on 2010 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structural phase transitions, mechanical deformations, and the embryonic stages of melting and crystallization are examples of phenomena that can now be imaged in unprecedented structural detail with high spatial resolution, and ten orders of magnitude as fast as hitherto. No monograph in existence attempts to cover the revolutionary dimensions that EM in its various modes of operation nowadays makes possible. The authors of this book chart these developments, and also compare the merits of coherent electron waves with those of synchrotron radiation. They judge it prudent to recall some important basic procedural and theoretical aspects of imaging and diffraction so that the reader may better comprehend the significance of the new vistas and applications now afoot. This book is not a vade mecum - numerous other texts are available for the practitioner for that purpose.
Download or read book Point Defects in Semiconductors I written by M. Lannoo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.
Download or read book Atom Probe Tomography written by Williams Lefebvre and published by Academic Press. This book was released on 2016-05-30 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atom Probe Tomography is aimed at beginners and researchers interested in expanding their expertise in this area. It provides the theoretical background and practical information necessary to investigate how materials work using atom probe microscopy techniques, and includes detailed explanations of the fundamentals, the instrumentation, contemporary specimen preparation techniques, and experimental details, as well as an overview of the results that can be obtained. The book emphasizes processes for assessing data quality and the proper implementation of advanced data mining algorithms. For those more experienced in the technique, this book will serve as a single comprehensive source of indispensable reference information, tables, and techniques. Both beginner and expert will value the way the book is set out in the context of materials science and engineering. In addition, its references to key research outcomes based upon the training program held at the University of Rouen—one of the leading scientific research centers exploring the various aspects of the instrument—will further enhance understanding and the learning process. - Provides an introduction to the capabilities and limitations of atom probe tomography when analyzing materials - Written for both experienced researchers and new users - Includes exercises, along with corrections, for users to practice the techniques discussed - Contains coverage of more advanced and less widespread techniques, such as correlative APT and STEM microscopy
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Theoretical Modelling Of Semiconductor Surfaces written by G P Srivastava and published by World Scientific. This book was released on 1999-11-22 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: The state-of-the-art theoretical studies of ground state properties, electronic states and atomic vibrations for bulk semiconductors and their surfaces by the application of the pseudopotential method are discussed. Studies of bulk and surface phonon modes have been extended by the application of the phenomenological bond charge model. The coverage of the material, especially of the rapidly growing and technologically important topics of surface reconstruction and chemisorption, is up-to-date and beyond what is currently available in book form. Although theoretical in nature, the book provides a good deal of discussion of available experimental results. Each chapter provides an adequate list of references, relevant for both theoretical and experimental studies. The presentation is coherent and self-contained, and is aimed at the postgraduate and postdoctoral levels.
