Download or read book Annealing of Neutron Irradiated Silicon with Implications in Device Technology written by Sushil Kumar Kapoor and published by . This book was released on 1972 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Charge state Effects on Annealing of Electron irradiated Silicon written by H. M. DeAngelis and published by . This book was released on 1974 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced defects can alter the properties of silicon and thereby degrade the performance of devices used in electronic and optoelectronic subsystems that must operate in nuclear and space radiation environments. The factors that produce or affect the stability of these defects are important considerations in developing methods for hardening devices to nuclear radiation. The annealing behavior of the E center, a prominent defect in electron-irradiated float-zone phosphorous-doped silicon, can be monitored by capacitance measurement techniques used with silicon Schottky barrier diodes. The defect charge state can be controlled during annealing by applying a reverse bias. It has been shown that although the E center is more stable in the negative charge state, it anneals more readily in the neutral charge state. It has been found that the capacitance measurement technique provides details of the properties of discrete radiation-induced defects not possible to obtain through the more conventional measurements of the Hall effect, conductivity, and carrier lifetime. (Author).
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by R. D. Larrabee and published by Springer. This book was released on 1984-07 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Download or read book Charge state Effects on Annealing of Electron irradiated Silicon written by H. M. DeAngelis and published by . This book was released on 1974 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced defects can alter the properties of silicon and thereby degrade the performance of devices used in electronic and optoelectronic subsystems that must operate in nuclear and space radiation environments. The factors that produce or affect the stability of these defects are important considerations in developing methods for hardening devices to nuclear radiation. The annealing behavior of the E center, a prominent defect in electron-irradiated float-zone phosphorous-doped silicon, can be monitored by capacitance measurement techniques used with silicon Schottky barrier diodes. The defect charge state can be controlled during annealing by applying a reverse bias. It has been shown that although the E center is more stable in the negative charge state, it anneals more readily in the neutral charge state. It has been found that the capacitance measurement technique provides details of the properties of discrete radiation-induced defects not possible to obtain through the more conventional measurements of the Hall effect, conductivity, and carrier lifetime. (Author)
Download or read book Rapid Thermal Annealing of Neutron Transmutation Doped Silicon written by Ewan Macelwee Lawson and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Annealing Study of the Lattice Parameter and the Anomalous X ray Transmission of Neutron Irradiated Boron Doped Silicon written by James W. Thomas and published by . This book was released on 1980 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Band bending Implications for Charge Injection Into Neutron irradiated Silicon written by Michael K. L. Shen and published by . This book was released on 1972 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Short term Annealing in Silicon Devices After Fission and Fusion Irradiations written by and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The described technique estimates the transient recovery of a semiconductor device to a short pulse of damaging radiation. Unlike previous techniques this method uses meaningful parameters, at relevant fluences, of typical mil. spec. devices. Using existing simulation facilities steady state (seconds) irradiations are proposed and a Fredholm integral equation is unfolded to obtain the transient response. The technique, which is applicable to both neutron and gamma radiation, is demonstrated by a simulated neutron irradiation transient recovery experiment. Applied to weapons systems the technique facilitates accurate predictions of electronic recovery times after exposure of the system to a weapons burst. It also obviates the necessity of building new pulsed simulation machines for direct measurement of transient recovery.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration Scientific and Technical Information Division and published by . This book was released on 1970 with total page 966 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Selected Listing of NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1970 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1995 IEEE Nuclear Science Symposium written by and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1995 with total page 742 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Selected Listing of NASA Scientific and Technical Reports for 1966 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1967 with total page 2084 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Selected Listing of NASA Scientific and Technical Reports for written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1966 with total page 2088 pages. Available in PDF, EPUB and Kindle. Book excerpt:
