Download or read book Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor written by Iraj Sadegh Amiri and published by Springer. This book was released on 2017-10-29 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

Download or read book Advanced Nanoelectronics written by Razali Ismail and published by CRC Press. This book was released on 2018-09-03 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.

Download or read book Graphene Science Handbook Six Volume Set written by Mahmood Aliofkhazraei and published by CRC Press. This book was released on 2016-04-26 with total page 3379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene is the strongest material ever studied and can be an efficient substitute for silicon. This six-volume handbook focuses on fabrication methods, nanostructure and atomic arrangement, electrical and optical properties, mechanical and chemical properties, size-dependent properties, and applications and industrialization. There is no other major reference work of this scope on the topic of graphene, which is one of the most researched materials of the twenty-first century. The set includes contributions from top researchers in the field and a foreword written by two Nobel laureates in physics. Volumes in the set: K20503 Graphene Science Handbook: Mechanical and Chemical Properties (ISBN: 9781466591233) K20505 Graphene Science Handbook: Fabrication Methods (ISBN: 9781466591271) K20507 Graphene Science Handbook: Electrical and Optical Properties (ISBN: 9781466591318) K20508 Graphene Science Handbook: Applications and Industrialization (ISBN: 9781466591332) K20509 Graphene Science Handbook: Size-Dependent Properties (ISBN: 9781466591356) K20510 Graphene Science Handbook: Nanostructure and Atomic Arrangement (ISBN: 9781466591370)

Download or read book Graphene Science Handbook written by Mahmood Aliofkhazraei and published by CRC Press. This book was released on 2016-04-27 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explore the Practical Applications and Promising Developments of GrapheneThe Graphene Science Handbook is a six-volume set that describes graphene's special structural, electrical, and chemical properties. The book considers how these properties can be used in different applications (including the development of batteries, fuel cells, photovoltaic

Download or read book Carbon Nanotubes for Interconnects written by Aida Todri-Sanial and published by Springer. This book was released on 2016-07-09 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.

Download or read book Springer Handbook of Nanotechnology written by Bharat Bhushan and published by Springer. This book was released on 2017-11-05 with total page 1704 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive handbook has become the definitive reference work in the field of nanoscience and nanotechnology, and this 4th edition incorporates a number of recent new developments. It integrates nanofabrication, nanomaterials, nanodevices, nanomechanics, nanotribology, materials science, and reliability engineering knowledge in just one volume. Furthermore, it discusses various nanostructures; micro/nanofabrication; micro/nanodevices and biomicro/nanodevices, as well as scanning probe microscopy; nanotribology and nanomechanics; molecularly thick films; industrial applications and nanodevice reliability; societal, environmental, health and safety issues; and nanotechnology education. In this new edition, written by an international team of over 140 distinguished experts and put together by an experienced editor with a comprehensive understanding of the field, almost all the chapters are either new or substantially revised and expanded, with new topics of interest added. It is an essential resource for anyone working in the rapidly evolving field of key technology, including mechanical and electrical engineers, materials scientists, physicists, and chemists.

Download or read book Integrated Devices for Artificial Intelligence and VLSI written by Balwinder Raj and published by John Wiley & Sons. This book was released on 2024-08-01 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its in-depth exploration of the close connection between microelectronics, AI, and VLSI technology, this book offers valuable insights into the cutting-edge techniques and tools used in VLSI design automation, making it an essential resource for anyone seeking to stay ahead in the rapidly evolving field of VLSI design. Very large-scale integration (VLSI) is the inter-disciplinary science of utilizing advanced semiconductor technology to create various functions of computer system. This book addresses the close link of microelectronics and artificial intelligence (AI). By combining VLSI technology, a very powerful computer architecture confinement is possible. To overcome problems at different design stages, researchers introduced artificial intelligent (AI) techniques in VLSI design automation. AI techniques, such as knowledge-based and expert systems, first try to define the problem and then choose the best solution from the domain of possible solutions. These days, several CAD technologies, such as Synopsys and Mentor Graphics, are specifically created to increase the automation of VLSI design. When a task is completed using the appropriate tool, each stage of the task design produces outcomes that are more productive than typical. However, combining all of these tools into a single package offer has drawbacks. We can’t really use every outlook without sacrificing the efficiency and usefulness of our output. The researchers decided to include AI approaches into VLSI design automation in order to get around these obstacles. AI is one of the fastest growing tools in the world of technology and innovation that helps to make computers more reliable and easy to use. Artificial Intelligence in VLSI design has provided high-end and more feasible solutions to the difficulties faced by the VLSI industry. Physical design, RTL design, STA, etc. are some of the most in-demand courses to enter the VLSI industry. These courses help develop a better understanding of the many tools like Synopsis. With each new dawn, artificial intelligence in VLSI design is continually evolving, and new opportunities are being investigated.

Download or read book Carbon Nanotube and Graphene Nanoribbon Interconnects written by Debaprasad Das and published by CRC Press. This book was released on 2017-12-19 with total page 197 pages. Available in PDF, EPUB and Kindle. Book excerpt: An Alternative to Copper-Based Interconnect Technology With an increase in demand for more circuit components on a single chip, there is a growing need for nanoelectronic devices and their interconnects (a physical connecting medium made of thin metal films between several electrical nodes in a semiconducting chip that transmit signals from one point to another without any distortion). Carbon Nanotube and Graphene Nanoribbon Interconnects explores two new important carbon nanomaterials, carbon nanotube (CNT) and graphene nanoribbon (GNR), and compares them with that of copper-based interconnects. These nanomaterials show almost 1,000 times more current-carrying capacity and significantly higher mean free path than copper. Due to their remarkable properties, CNT and GNR could soon replace traditional copper interconnects. Dedicated to proving their benefits, this book covers the basic theory of CNT and GNR, and provides a comprehensive analysis of the CNT- and GNR-based VLSI interconnects at nanometric dimensions. Explore the Potential Applications of CNT and Graphene for VLSI Circuits The book starts off with a brief introduction of carbon nanomaterials, discusses the latest research, and details the modeling and analysis of CNT and GNR interconnects. It also describes the electrical, thermal, and mechanical properties, and structural behavior of these materials. In addition, it chronicles the progression of these fundamental properties, explores possible engineering applications and growth technologies, and considers applications for CNT and GNR apart from their use in VLSI circuits. Comprising eight chapters this text: Covers the basics of carbon nanotube and graphene nanoribbon Discusses the growth and characterization of carbon nanotube and graphene nanoribbon Presents the modeling of CNT and GNR as future VLSI interconnects Examines the applicability of CNT and GNR in terms of several analysis works Addresses the timing and frequency response of the CNT and GNR interconnects Explores the signal integrity analysis for CNT and GNR interconnects Models and analyzes the applicability of CNT and GNR as power interconnects Considers the future scope of CNT and GNR Beneficial to VLSI designers working in this area, Carbon Nanotube and Graphene Nanoribbon Interconnects provides a complete understanding of carbon-based materials and interconnect technology, and equips the reader with sufficient knowledge about the future scope of research and development for this emerging topic.

Download or read book Advanced Indium Arsenide Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-28 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Download or read book Properties and Functionalization of Graphene written by Dinadayalane Tandabany and published by Elsevier. This book was released on 2022-05-10 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Properties and Functionalization of Graphene: Computational Chemistry Approaches, Volume 21 shows how computational chemistry can be used to explore molecular interactions when modeling and manipulating graphene's properties for varied applications. Sections compare results and experimental evidence, cover the experimental techniques employed in the functionalization of graphene and associated challenges, and delve into the properties of functionalized graphene. Under the guidance of its expert editor, this book shares insights from a global team of specialists, making it an authoritative, practical guide for all those studying, developing or applying graphene across a whole range of fields. - Provides practical insights into the latest computational approaches used in modeling the properties of functionalized graphene - Includes detailed methods and step-by-step guidance on key processes that are supported throughout with examples - Highlights the electronic properties of functionalized graphene

Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Download or read book Graphene and Its Fascinating Attributes written by Swapan K. Pati and published by World Scientific. This book was released on 2011 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene, a single sheet of graphite, has an unconventional electronic structure that can be described in terms of massless Dirac Fermions. This book presents the frontiers of graphene research ranging from important issues in condensed matter physics and chemistry to advanced device applications.

Download or read book Quantum Hybrid Electronics and Materials written by Yoshiro Hirayama and published by Springer Nature. This book was released on 2022-05-03 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights recent advances in quantum control technologies with regard to hybrid quantum systems. It addresses the following topics: phonon engineering based on phononic crystals, carbon-based nano materials like graphene and nanotubes, Terahertz light technology for single-molecule and quantum dots, nuclear-spin-based metrology for semiconductor quantum systems, quantum anomalous Hall effect in magnetic topological insulators, chiral three-dimensional photonic crystals, and bio-inspired magnonic systems. Each topic, as a component in the framework of hybrid quantum systems, is concisely presented by experts at the forefront of the field. Accordingly, the book offers a valuable asset, and will help readers find advanced technologies and materials suitable for their purposes.

Download or read book Nano CMOS and Post CMOS Electronics written by Saraju P. Mohanty and published by IET. This book was released on 2016-04-12 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.

Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: - Why you should use FinFET - The physics and operation of FinFET - Details of the FinFET standard model (BSIM-CMG) - Parameter extraction in BSIM-CMG - FinFET circuit design and simulation - Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard - The first book on the industry-standard FinFET model - BSIM-CMG

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.