Download or read book Physics Based Analytical Model of Gallium Nitrate Metal Semiconductor Field Effect Transistor Microwave Frequency Applications written by Hardeep Singh Gill and published by . This book was released on 2013 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Military based applications have a great interest in GaN based high power and efficient semiconductor materials devices. GaN Metal Semiconductor Field Effect Transistors (MESFETs) have accepted much consideration as its structure is less difficult to examine than that of High Electron Mobility Transistors (HEMTs) and its epi-layers and the physical impacts are simpler to acknowledge and decipher. Simple physics based analytical models are required to be developed for various parameters of GaN in order to use its vast potential in semiconductor electronics. This will give a new dimension to computer-aided digital design of GaN ICs. In this thesis an effort has been made to demonstrate various qualities of GaN such as I-V, C-V and transconductance keeping in account the impact of parasitic resistances.
Download or read book Simulation and Modeling of Emerging Devices written by Brinda Bhowmick and published by Cambridge Scholars Publishing. This book was released on 2023-05-10 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-31 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-23 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Download or read book JJAP written by and published by . This book was released on 2007 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytic Modeling of Tunnel Field Effect Transistors and Experimental Investigation of GaN High Electron Mobility Transistors written by Jianzhi Wu and published by . This book was released on 2016 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: High density and lower power drive the aggressive scaling down of CMOS transistors. Yet, the scaling of Si bulk MOSFETs are approaching physical limits, suffering from poor electrostatic control due to short channel effects, gate leakage current caused by gate oxide tunneling, and most importantly the non-scaled supply voltage imposed by thermionic emission limitation. Tunnel FETs (TFETs) based on band-to-band tunneling current injection mechanism, have emerged as promising candidates to deliver steep turn-off slopes, thus enables a sharp reduction of supply voltage to below 0.5 V. This dissertation is primarily devoted to develop an accurate analytic model for TFETs with a double-gate structure, providing physical insights to the design principles. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. The potential is of an exponential profile with a characteristic scale length given by the device thickness. Both the source-to-channel tunneling and source-to-drain tunneling are developed and included in the model. It has been verified by numerical simulations for a wide range of bandgaps and channel lengths. Also incorporated in the model are the short-channel effect, source doping effect, ambipolar effect, and de-bias of gate voltage by channel charge. Based on these, the guidelines for scaling TFETs to sub-10-nm channel lengths are brought forth. The model is continuous, physical and predictive in the sense that there is no need for ad hoc fitting parameters. For high-power and high-frequency applications, GaN high-electron-mobility-transistors (HEMTs) stand out as promising candidate devices for achieving high breakdown voltage, high output current and high transconductance characteristics. Yet, the performance of GaN HEMTs suffers from mobility degradation due to poor thermal dissipation of conventional epitaxial substrates. This dissertation also experimentally demonstrates the GaN HEMTs fabricated on diamond substrate with extraordinary thermal management capability. The self-heating induced current droop is effectively absent in the saturated Ids-Vds characteristics of the resulting devices, thus paving the way for enhancing the energy conversion efficiency.
Download or read book HEMT Technology and Applications written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2022-06-23 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Download or read book An Analytical Model to Study the Scaling Capability of Deep Submicron Double Gate Gallium Nitride GaN MESFETs written by Srikanth Reddy Mareddy and published by . This book was released on 2015 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: A two dimensional (2-D) analytical model of a Gallium Nitride (GaN) metal-semiconductor field effect transistor (MESFET) has been developed to present the submicron double gate, and it is expected to reduce the short channel effects for deep submicron GaN-MESFET based low power applications. This model also includes the two dimensional Poisson's equation to accurately determine the electric field in the drain side and the effect of drain induced barrier lowering effect. This analytical model expects that threshold voltage is developed greatly when compared to single-gate GaN-MESFET. By simulating this analytical model using the device parameters and DC biasing conditions, this Double Gate GaN MESFET model can solve the critical problems like immunity of short channel effects of GaN based circuits for the low power applications.
Download or read book DEVICE MODELING OF AlGaN GaN HIGH ELECTRON MOBILITY TRANSISTORS HEMTs written by Manju Korwal Chattopadhyay and published by LAP Lambert Academic Publishing. This book was released on 2010-10 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wave frequencies. Owing largely to a high electrical breakdown field, electron sheet charge density, and substrate material with high thermal conductivity, these are capable of handling larger power density signals at high temperatures in unfriendly environments. The present work involves the analytical modeling of AlGaN/GaN material system based HEMTs. A polynomial represents Fermi-level as a non-linear function of sheet carrier density at the interface of HEMTs. Using this polynomial, models for finding the temperature dependent gate capacitance, parasitic MESFET dependent transconductance and dc characteristics including self-heating effects were formulated. The effects of spontaneous and piezoelectric polarization fields, have been investigated in detail. All results show reasonable agreement with the experimental data. Our analytical simulation should be useful in device designing, allowing interactive optimization of device configuration and economically complementing experimental investigations.
Download or read book Analytical Model of Gallium Nitride Metal Semiconductor Field effect Transistors written by Uttam Raj Sali and published by . This book was released on 2014 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an analytical model of Gallium Nitride (GaN) MESFETs (metal-semiconductor field effect transistors). There are two band structures modeled for GaN: a Zinc Blende crystal structure and a Wurtzite crystal structure. This model is based on the parameters chosen for the Wurtzite crystal structure. The channel conductance, saturation current, transconductance, charge under the gate, drain-to-gate and gate-to-source capacitance, cutoff frequency, characteristic switching time, power-delay product, and breakdown voltage are calculated in the analysis of this model. These results are verified by two-dimensional computer calculations that agree with the results of the computer analysis and experimental data for a 1-æm gate GaN MESFET. A stray gate-to-drain and gate-to-source capacitance defined a limitation on the gate length as greater than 0.1 æm for a GaN MESFET. In this project, computer analysis is compared with experimental data for GaN. A MATLAB tool is used to obtain the computer analysis. The simulation shows computer analysis for GaN in agreement with the experimental data for a GaN MESFET.
Download or read book Analytical Model of Threshold Voltage for Narrow Width Metal Oxide Semiconductor Field Effect Transistor written by Hiren P. Upadhyay and published by . This book was released on 1996 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intricacies of Modeling and Analysis of DC Characteristics of Single and Multi Channel Laterally Gated AlGaN GaN Heterojunction Field Effect Transistors written by Mauricio Buitrago and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present thesis offers a detailed description about the modeling of single- and multi-channel laterally-gated AlGaN/GaN heterojunction field effect transistors (HFETs) through device investigation in the Comsol Multiphysics® simulation environment. After two decades of research, studying GaN HFETs continues to be a very interesting area of investigation. This is because of the interest in using these devices in high frequency applications as well as low frequency power management. Laterally-gated GaN HFETs have recently drawn the attention of semiconductor devices engineers that search for obtaining higher current densities, higher linearity, better stability at higher frequencies, and better power management while increasing packing density. The presented simulations offer an in-depth analysis of the observations made at thermal equilibrium and the results obtained for the DC characteristics of these devices, along with the comparison of these characteristics with those of the top-gated varieties. These observations demonstrate the improved effectiveness of lateral gating in controlling multiple vertically stacked 2DEG channels. Although there is improvement on several parameters like current density, linearity, and ON resistance (Ron), as the number of channels increases, simulations demonstrate a certain degree of degradation of drain-induced barrier lowering (DIBL) and knee voltage (Vknee). For these simulations, the devices' self-heating at higher current densities was not considered. Also, the ohmic contacts were assumed to be ideal.
