Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Download or read book Analysis and Simulation of Semiconductor Devices written by Siegfried Selberherr and published by . This book was released on 1984 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 1998-05-31 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Download or read book Semiconductor Devices written by Kevin M. Kramer and published by Prentice Hall. This book was released on 1997 with total page 746 pages. Available in PDF, EPUB and Kindle. Book excerpt: CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Download or read book Noise in Semiconductor Devices written by Fabrizio Bonani and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-04-09 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Download or read book The Stationary Semiconductor Device Equations written by P.A. Markowich and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 1989-10-30 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Download or read book Analysis of Charge Transport written by Joseph W. Jerome and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.
Download or read book Semiconductor Devices Explained written by Ton J. Mouthaan and published by John Wiley & Sons. This book was released on 1999 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offers an innovative and accessible new approach to the teaching of the fundamentals of semiconductor components by exploiting simulation to explain the mechanisms behind current in semiconductor structures. Simulation is a popular tool used by engineers and scientists in device and process research and the accompanying two dimensional process and device simulation software 'MicroTec', enables students to make their own devices and allows the recreation of real performance under varying parameters. There is also an accompanying ftp site containing ICECREAM software (Integrated Circuits and Electronics group Computerized Remedial Education And Mastering) which improves understanding of the physics involved and covers semiconductor physics, junction diodes, silicon bipolar and MOS transistors and photonic devices like LEDs and lasers. Features include: * MicroTec diskette containing a two-dimensional process and device simulator on which the many simulation exercises mentioned in the text can be performed thereby facilitating learning through experimentation * Computer aided education software (accessible vita ftp) featuring question and answer games, which enables students to enhance their understanding of the physics involved and allows lecturers to set assignments * Broad coverage spanning the common devices: pn junctions, metal semiconductor junctions, photocells, lasers, bipolar transistors, and MOS transistors * Discussion of fundamental concepts and technological principles offering the student a valuable grounding in semiconductor physics * Examination of the implications of recent research on small dimensions, reliability problems and breakdown mechanisms. Semiconductor Devices Explained offers a comprehensive new approach to teaching the fundamentals of semiconductor components based on the use of the accompanying process and device simulation software. Simulation is a popular tool used by engineers and scientists in device and process research. It supports the understanding of basic phenomena by linking the theory to hands on applications and real world problems with semiconductor devices. Throughout the text students are encouraged to augment their understanding by undertaking simulations and creating their own devices. The ICECREAM programme (Integrated Circuits and Electronics group Computerized Remedial Education And Mastering) question and answer game leads students through the concepts of common devices and makes learning fun. There is also a self-test element in which a data bank generates questions on the fundamentals of semiconductor junctions enabling students to assess their progress. Larger projects suitable for use as examination assignments are also incorporated. The test package is freely available to lecturers from the author on request. The remedial component of ICECREAM is available from the Wiley ftp site. MicroTec comes on a disk in the back of the book.
Download or read book Optoelectronic Devices written by Joachim Piprek and published by Springer Science & Business Media. This book was released on 2006-01-26 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices transform electrical signals into optical signals (and vice versa) by utilizing the interaction of electrons and light. Advanced software tools for the design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help the reader to better understand internal device physics. Real-world devices such as edge-emitting or surface-emitting laser diodes, light-emitting diodes, solar cells, photodetectors, and integrated optoelectronic circuits are investigated. The software packages described in the book are available to the public, on a commercial or noncommercial basis, so that the interested reader is quickly able to perform similar simulations.
Download or read book 3D TCAD Simulation for Semiconductor Processes Devices and Optoelectronics written by Simon Li and published by Springer Science & Business Media. This book was released on 2011-10-01 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
