Download or read book An Investigation of Intersubband Transitions in Quantum Wells for Novel Optoelectronics Applications written by Yuh-Jier Mii and published by . This book was released on 1990 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-25 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband Transitions in Quantum Wells: Physics and Device Applications II

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications written by and published by Academic Press. This book was released on 1999-10-28 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-27 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.

Download or read book Intersubband Transitions In Quantum Structures written by Roberto Paiella and published by McGraw Hill Professional. This book was released on 2010-05-05 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.

Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer. This book was released on 2012-10-29 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-27 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband Transitions in Quantum Wells: Physics and Device Applications II.

Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer. This book was released on 1998-07-31 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of Intersubband Transitions in Quantum Wells: Physics and Devices is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. This reference work is based on the International Workshop that was held at National Cheng Kung University in Tainan, Taiwan in December 15-18, 1997. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 mum). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covering most aspects of the intersubband transition phenomena including: the basic intersubband transition process, multiquantum well infrared photodetector (QWIP) physics, large format (640×480) GaAs QWIP (with 9.0 mum cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long-wavelength quantum cascade (QC) lasers such as short (lambda = 3.4 mum) and long (lambda = 11.5 mum) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15.5 mum wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. Intersubband Transitions in Quantum Wells: Physics and Devices will be of interest to researchers from universities and industrial laboratories working on physics and devices of nanostructures, and researchers in the infrared (IR) community.

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-13 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Well Intersubband Transition Physics and Devices written by Hui C. Liu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Download or read book Optoelectronics Based on SiGe Si Heterostructures written by and published by . This book was released on 1995 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: The overall objective of the research was to explore SiGe/Si heterostructures for optoelectronics applications. We have extensively investigated intersubband transitions of Si/Ge quantum structures including p-type Si quantum well, n-type Si(110) quantum wells, and n-type Ge(001) quantum wells. We have also studied many-body effects on the intersubband transitions. The application of these transitions for the fabrication of tunable normal incidence infrared detectors has been demonstrated. In the area of optical properties, we have also demonstrated a large Stark shift in type II SiGe/Si multiple quantum wells and luminescence from Si(sub m)Ge(sub n) superlattices. In the area of transport properties, we have studied the in-plane mobility of coupled delta doped quantum wells as a function of spacing between the wells. An enhancement of hole mobility above that of the Si was found due to the penetration of wavefunctions into the spacer where the impurity scattering is minimal. In addition to exploration of new devices, alternative growth techniques for achieving the layer thickness to the monolayer scale and doping control were also investigated. In the area of the growth control of SiGe epitaxial layers, we have constructed a gas source molecular beam epitaxy 5 stem. We have investigated the orientation dependence of as beam epitaxy. Selective epitaxy growth on SiO2-masked substrates has been demonstrated. We have also studied the role of surfactants for obtaining high quality coherently strained SiGe epitaxial layers and for providing doping control in quantum wells an superlattices. jg.

Download or read book Strained Layer Quantum Wells and Their Applications written by M. O. Manasreh and published by CRC Press. This book was released on 1997-12-23 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.

Download or read book Optical Properties of III V Semiconductor Nanostructures and Quantum Wells written by and published by . This book was released on 2006 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the optoelectronic applications of interband and intersubband transitions in III-V semiconductors quantum wells and quantum dots. The research efforts included the investigation of intersubband transitions in GaN/AlGaN multiple quantum wells for the 1.3 and 1.5 micron spectral ranges. These wavelengths are important for optical communications. Furthermore, we investigated single wall carbon nanotubes for possible use as space-based solar cell. The final report contains detail discussions of the results obtained during the last three years. At the end of the report, we listed our professional activities including technical papers, books, symposia, invited talks, and students supported by the grant.

Download or read book Ultrafast All optical Switching Based on Intersubband Transitions in Gallium Nitride aluminum Nitride Quantum well Waveguides written by Yan Li and published by . This book was released on 2009 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Intersubband transitions in semiconductor quantum wells have been the subject of extensive research for the past several years and are nowadays used in a variety of devices operating at mid-infrared wavelengths, such as quantum-well infrared photodetectors and quantum cascade lasers. More recently near-infrared intersubband transitions have also been measured in wide-conduction-band-offset heterostructures such as GaN/AlGaN and InGaAs/AlAsSb quantum wells, at wavelengths in the low-loss transmission window of optical fibers. This opens up the possibility of utilizing the unique features of intersubband transitions for information processing applications in fiber-optic communications. In particular, due to their ultrafast relaxation lifetimes and giant optical nonlinearities, intersubband transitions are ideally well suited to nonlinear optical switching at bit rates of several hundred Gb/s. Thus they have the potential to play a key enabling role in future ultra-broadband all-optical networks, in which information is not only transmitted but also processed in the optical domain. This dissertation addresses the design, fabrication and demonstration of all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband transitions in GaN/AlN quantum-well waveguides. The intersubband absorption properties of GaN/AlN quantum wells have first been investigated via Fourier-transform infrared spectroscopy. At the same time, a self-consistent Poisson and Schrödinger equations solver has been developed to interpret the measurement results, and to design quantum well structures optimized for all-optical switching applications. The design, fabrication and characterization of waveguides based on these quantum wells are also addressed in detail in this dissertation. All-optical switching via cross absorption saturation has then been demonstrated with an optimized waveguide structure. The measured switching times are shorter than one picosecond, which indicates the suitability of these nonlinear devices for all-optical gating at bit rates of several hundred Gb/s. At the same time, relatively low control-pulse switching energies of about 40 pJ have been demonstrated. This important parameter can be further improved using a novel approach based on coupled quantum wells, which we have proposed and theoretically investigated. Finally, the intersubband refractive-index nonlinearities of GaN/AlN quantum wells have been studied both experimentally and theoretically. The results indicate that these quantum wells are also promising for all-optical switching via cross-phase modulation, an approach that may prove advantageous in terms of contrast ratio, on-state losses, and regenerative capabilities.

Download or read book Semiconductor Quantum Well Intermixing written by Deparment of Pathology J T Lie and published by CRC Press. This book was released on 2019-01-07 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.

Download or read book Physics of Quantum Well Devices written by B.R. Nag and published by Springer Science & Business Media. This book was released on 2006-04-11 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.